BY 255 DIODE Search Results

BY 255 diode

Contextual Info: BY 251.BY 255 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A

BY 255 diode

Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Contextual Info: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V

555i

Contextual Info: OP T O TECHNOLOGY EÖE INC D ba02245 0G00CH4 1 = V/-73 OPTO TECHNOLOGY TYPE OTS 250 OTS 255 r .:• c '- j ! OP-TEC" 0TS255 OPTICAL SWITCH W/.060 APERTURE NOT ACTU AL SIZE DESCRIPTION Non-contact switching is provided by Opto Technology’s OTS 250/OTS 255

Contextual Info: BY 251.BY 255 *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V Features                 8  9  1  9  9  -)  1  9  9 )   9 

Contextual Info: BY 251.BY 255 *0 Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V Features                 8  9  1  9  9  -)  1  9  9 )   9 

Contextual Info: BY 251.BY 255, BY 1600.BY 2000 Silizium Gleichrichter Silicon Rectifier 3A Nominal current Nennstrom 200.2000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse -D O -201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0

P6004R

Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Contextual Info: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)

Contextual Info: Multi-Function Assemblies — Frequency Agile Filters ◆ Description: This frequency agile filter is controlled using an 8 bit parallel interface, which allows 251 tune words for frequency control. A power saving mode is initiated by sending a 255 command

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

51a zener

Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
Contextual Info: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

Contextual Info: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured

ph 41 zener diode

Contextual Info: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity

Contextual Info: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B T-<B-n IN3889-IN3893 SERIES Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5 max

D1809

Abstract: 2040.2590 68 4401 D1029 D1030 D1049 D1069 D1800 D452N
Contextual Info: Rectifier Diodes Type V rrm Ifrm sm Ifsm V A kA 10ms, 1^jmax V r SM = Vrrm + 100 V 50V 1) J i2d t A2s I fA V M ^ C V (T O ) It RthJC tvj max A /°C V m£2 °c/w °c 180° el sin 1 0 m S , t^jmax tvi = tv, = •103 ^vj max ^vj max outline D 121 N 800.2000

Contextual Info: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07

Contextual Info: 43E D • 01 3 7 0 0 ^ G G D D lb l 3 ■ S L C B SE fllTRON I N D U S T R I E S B Z Y 9 3 / Z 7 SERIES LTD -t-«-«. Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F080 ■Voltage Range 3.0 to 400 Volts 25 Watt Steady State ■1500 Watt Peak Power

d448

Abstract: d749 D1029 D1030 D1049 d60k
Contextual Info: bl E EUPEC D 3MD3ET7 0GG1331 633 • i U P E C Rectifier diodes Type If r m s m V r rm V rs m = V rrm + I f sm / ¡ 2dt I f avm ^ c V TO It R th J C O utline W j m ax 100 V A V 10 ms, 10 ms, tv i = tv j = tv j m ax tv j max tv j max tv j max 180°el sin.

DMF2190

Abstract: DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820
Contextual Info: Silicon Beam–Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication Description Alpha beam–lead and chip Schottky barrier mixer

bzx98c

Abstract: 1N30098 Z3813 Z3827 in137
Contextual Info: SEU ITRO N IN D U S T R IE S LTD 43E 013700^ D QGGD 1 S 3 4 B1 S L C B rT'-lU\"7 IN3900/IN2900/Z3 S E R I E S Hermetically Sealed •Voltage Regulator Diode Released to BS9305-F079 ■Voltage Range 3.0 to 400 Volts 10.0 Watt Steady State ■400 Watt Peak Power

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

1M5378B

Contextual Info: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C

AK2572

Abstract: QFN28 ASAHI KASEI L 817
Contextual Info: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES •Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.

Contextual Info: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.

Contextual Info: Packaged PIN Diodes RoHS Compliant Rev V.7 Maximum Power Dissipation Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications