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    BY 220 DIODE Search Results

    BY 220 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    BY 220 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode 6v8a

    Abstract: Diode marking MFW 6v8a diode 001 6V8A 029 6v8a on 6v8a 6V8A DIODE 001 6V8A 950 6V8A marking code MFW
    Contextual Info: SM15T6V8,A/220,A SM15T6V8C,CA/220C,CA  TRANSILTM FEATURES PEAK PULSE POWER= 1500 W @ 1ms BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED SOD 15 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous reponse to transients makes them particularly


    Original     		SM15T6V8 SM15T6V8C CA/220C diode 6v8a Diode marking MFW 6v8a diode 001 6V8A 029 6v8a on 6v8a 6V8A DIODE 001 6V8A 950 6V8A marking code MFW PDF

    diode 6v8a

    Abstract: SM6T6V8 sm6t18 ed 6v8a 140 dn DT 6V8A SM6T18C SM6T15 DW 6v8a SM6T33 SM6T6V8 RoHS
    Contextual Info: SM6T6V8,A/220,A SM6T6V8C,CA/220C,CA  TRANSILTM FEATURES PEAK PULSE POWER= 600 W @ 1ms BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED SOD 6 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly


    Original     		CA/220C diode 6v8a SM6T6V8 sm6t18 ed 6v8a 140 dn DT 6V8A SM6T18C SM6T15 DW 6v8a SM6T33 SM6T6V8 RoHS PDF

    S432 DIODE schottky

    Abstract: DIODE S417 Schottky s448 schottky diode s448 diode diode s526 DIODE S438 eeprom s190 DIODE S526 Schottky diode s426 eeprom s130
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD161608 176-RGB x 220-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY DESCRIPTION The μPD161608 is TFT-LCD display driver IC. Also, it is possible by 176-RGB x 220-dot to display 262,144 colors. FEATURES • 176-RGB x 220-dot TFT-LCD display driver IC for 262,144 colors 528ch-source driver/220ch-gate driver


    Original     		PD161608 176-RGB 220-DOT 144-COLOR PD161608 528ch-source S432 DIODE schottky DIODE S417 Schottky s448 schottky diode s448 diode diode s526 DIODE S438 eeprom s190 DIODE S526 Schottky diode s426 eeprom s130 PDF

    Contextual Info: TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 500 0.3 @ VGS =10V ID (A) 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		TSM20N50 O-220 ITO-220 TSM20N50 PDF

    n-channel 900v 9a

    Abstract: TSM9N90CZ TSM9N90 power mosfet 900v
    Contextual Info: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM9N90 O-220 ITO-220 TSM9N90 n-channel 900v 9a TSM9N90CZ power mosfet 900v PDF

    TO 220 Package High current N CHANNEL MOSFET

    Abstract: TSM7N65 MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor
    Contextual Info: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM7N65 ITO-220 O-220 TSM7N65 TO 220 Package High current N CHANNEL MOSFET MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor PDF

    6A 650V MOSFET

    Abstract: MOSFET 50V 100A TO-220 TSM7N65
    Contextual Info: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM7N65 ITO-220 O-220 TSM7N65 6A 650V MOSFET MOSFET 50V 100A TO-220 PDF

    power Diode 800V 20A

    Abstract: MOSFET 20a 800v
    Contextual Info: TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 ID (A) 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM4N80 O-220 ITO-220 TSM4N80 power Diode 800V 20A MOSFET 20a 800v PDF

    TSM13N50CI

    Contextual Info: TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM13N50 O-220 ITO-220 TSM13N50 TSM13N50CI PDF

    6A 650V MOSFET

    Abstract: mosfet 650v
    Contextual Info: TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 650 1.2 @ VGS =10V ID (A) 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM7N65 O-220 ITO-220 TSM7N65 6A 650V MOSFET mosfet 650v PDF

    N-Channel mosfet 400v

    Abstract: S M 685 13A
    Contextual Info: TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM13N50 O-220 ITO-220 TSM13N50 N-Channel mosfet 400v S M 685 13A PDF

    800V 40A mosfet

    Abstract: diode 800v
    Contextual Info: TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 ID (A) 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM8N80 O-220 ITO-220 TSM8N80 800V 40A mosfet diode 800v PDF

    Contextual Info: TSM9NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 500 ID (A) 0.85 @ VGS =10V 9 General Description The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		TSM9NB50 O-220 ITO-220 TSM9NB50 PDF

    Contextual Info: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		TSM10N80 O-220 ITO-220 TSM10N80 PDF

    Contextual Info: TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 500 0.44 @ VGS =10V ID (A) 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		TSM15N50 O-220 ITO-220 TSM15N50 PDF

    Contextual Info: TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 4 @ VGS =10V ID (A) 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM4N90 O-220 ITO-220 TSM4N90 PDF

    Contextual Info: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM9N90 O-220 ITO-220 TSM9N90 PDF

    TSM15N50

    Contextual Info: TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 500 0.44 @ VGS =10V ID (A) 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		TSM15N50 O-220 ITO-220 TSM15N50 PDF

    Contextual Info: TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.9 @ VGS =10V ID (A) 7 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM7N90 O-220 ITO-220 TSM7N90 PDF

    MOSFET 600V 7A

    Abstract: mosfet 600V 7A N-CHANNEL A11 MARKING TSM7N60 10SEC MOSFET A11 A11 MARKING CODE
    Contextual Info: TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM7N60 ITO-220 O-220 TSM7N60 MOSFET 600V 7A mosfet 600V 7A N-CHANNEL A11 MARKING 10SEC MOSFET A11 A11 MARKING CODE PDF

    MOSFET 800V

    Abstract: MOSFET 20a 800v TSM4N80
    Contextual Info: TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 ID (A) 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM4N80 O-220 ITO-220 TSM4N80 MOSFET 800V MOSFET 20a 800v PDF

    Contextual Info: TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 ID (A) 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM4N80 O-220 ITO-220 TSM4N80 PDF

    800V 40A mosfet

    Contextual Info: TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 ID (A) 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		TSM8N80 O-220 ITO-220 TSM8N80 800V 40A mosfet PDF

    TSM20N50

    Contextual Info: TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 500 0.3 @ VGS =10V ID (A) 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		TSM20N50 O-220 ITO-220 TSM20N50 PDF