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    BW5 TRANSISTOR Search Results

    BW5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    BW5 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    memory depth expansion

    Abstract: T35L6464A 64KX64
    Contextual Info: tm TE CH T35L6464A SYNCHRONOUS BURST SRAM 64K x 64 SRAM FEATURES PIN ASSIGNMENT Top View OPTIONS CE BW8 BW7 BW6 BW5 OE CLK BWE GW BW4 BW3 VSS VCC BW2 BW1 ADSC ADSP ADV VSSQ CE2 CE3 CE2 VSS VCC 102 2 3 4 5 101 100 99 98 6 7 8 9 97 96 95 94 10 11 12 13 93


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    t35l6464a128-leadmemory depth expansion64kx64 PDF

    Bw5 transistor

    Abstract: SBW transistor sbw marking
    Contextual Info: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP


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    sbw-5089mm50vml200cecb-100607+4eds-103325bw5 transistorsbw transistorsbw marking PDF

    Bw5 transistor

    Abstract: ML200C SBW-5089 broadband bias tee
    Contextual Info: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP


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    sbw-5089ml200cecb-100607eds-103325+2bw5 transistorbroadband bias tee PDF

    SB61S64K64A-4

    Abstract: SB61S64K64A-5
    Contextual Info: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous ■Fast 3.3V -5% and +10% power supply clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz ■Two clocked chip enable/one clocked chip disable


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    sb61s64k64a75ns/133mhz4ns/125mhz5ns/100mhz+6128-pin304-bittel886-3-5777897fax886-3-5779832sb61s64k64a-4sb61s64k64a-5 PDF

    SB61S128K64A-5

    Contextual Info: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous pipelined-operation 3.3V -5% and +10% power supply ■Internally self-timed WRITE cycle clock access time:


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    sb61s128k64a75ns/133mhz4ns/125mhz5ns/100mhz+5128-pin608-bitusi5779832tel886-3-5777897sb61s128k64a-5 PDF

    GVT7164D64

    Contextual Info: GALVANTECH, INC. GVT7164D64 64K X 64 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 64K x 64 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


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    gvt7164d64536x647164d64access/10ns+2access/12nsaccess/15ns PDF

    Contextual Info: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable


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    sb61s128k64a75ns/133mhz4ns/125mhz5ns/100mhz+3128-pin608-bitusin779832 PDF

    Silicon-Based Technology

    Contextual Info: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable


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    sb61s64k64a75ns/133mhz4ns/125mhz5ns/100mhz+4128-pin304-bitad-3-5779832silicon-based technology PDF

    marking LTES

    Abstract: T35L6464A 64KX64 marking a11
    Contextual Info: tm TE CH T35L6464A SYNCHRONOUS BURST SRAM 64K x 64 SRAM 3.3V SUPPLY, FULLY REGISTERED AND OUTPUTS, BURST COUNTER • Fast Access times: 5, 6, 7, and 8ns • Fast clock speed: 100, 83, 66, and 50 MHz • Provide high performance 3-1-1-1 access rate • Fast OE access times: 5 and 6ns


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    t35l6464a128-leadmarking ltes64kx64+1marking a11 PDF

    SMD BW4

    Abstract: Bw5 transistor MARKING SMD PNP TRANSISTOR 2SB736 2SD780 hFE CLASSIFICATION Marking
    Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Complementary to 2SD780. 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


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    2sb736ot-232sd780smd bw4+3bw5 transistormarking smd pnp transistorhfe classification marking PDF

    transistor 5bw

    Abstract: transistor 3bw 5bw transistor 2sb736r 3bw transistor 5BW 30 Bw5 transistor 1bw transistor transistor 1BW
    Contextual Info: 2 S B 7 3 6 ,2 S B 7 3 6 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Complimentary to 2SD780, 2SD780R P A C K A G E DIMENSIONS High DC current gain: h FE = 200 TYP. <VCE = -1 .0 V , l c = -5 0 m A in m illim eters {inches) 25T i 10 a


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    2sb7362sb736r2sd7802sd780r+8transistor 5bwtransistor 3bw5bw transistor3bw transistor5bw 30bw5 transistor1bw transistortransistor 1bw PDF

    B52 transistor

    Abstract: Bw5 transistor MARKING B52 transistor b54 2SB736 2SB736A 2SD780 2SD780A 2SB736AB51
    Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S B 7 3 6 .2 S B 7 3 6 A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM EN SIO N S The 2SB736, 2SB736A are designed for use in small type equipments espe­ in millimeters


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    2sb7362sb736a2sd7802sd780a+7j22686--84mb52 transistorbw5 transistormarking b52transistor b542sb736ab51 PDF

    2SB736

    Abstract: B52 transistor
    Contextual Info: SIUCON TRANSISTORS 2SB736,2SB736A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRAN SISTOR MINI M OLD DESCRIPTION P A C K A G E DIMENSIONS Th e 2 S B 7 36, 2 S B 7 3 6 A are designed fo r use in sm all ty p e equipm ents espe­ in millimeters 2 .8 ± 0.2


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    2sb7362sb736ab52 transistor PDF

    circuit diagram with IC 7476

    Abstract: 600/DG34-1021-36-1012-F
    Contextual Info: ADVANCE I^ IC R D N 32K, 64K SYNCHRONOUS SRAM MODULE X MT2LSYT3272B2, MT4LSYT6472B2 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View 160-Lead, Dual Read-out DIMM


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    mt2lsyt3272b2mt4lsyt6472b2200ms001db53+2circuit diagram with ic 7476600/dg34-1021-36-1012-f PDF

    CS-8171D8

    Abstract: CS-8171T5 CS-8171TV5 Bw5 transistor
    Contextual Info: M icropower 8V, 100mA Low Dropout Linear Regulator w ith RESET and ENABLE Features D escription T h e CS-8171 is a p recisio n 8V, 100m A m ic ro p o w e r v o ltag e re g u la ­ to r w ith v e ry lo w q u iescen t c u rre n t 75pA ty p ical at lOOpA load . T he


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    100macs-8171600mvcs-8171d8+4cs-8171t5t0-220cs-8171tv5bw5 transistor PDF

    bt 2025 bh

    Abstract: BEL 100N TRANSISTOR PIN DIAGRAM BEL 100N TRANSISTOR bel 100n EPE6047S Pulse Transformers tp 12 80C25 80C26
    Contextual Info: SEEQ 80C25 AUtODUPLEX CMOS Ethernet Interface Adapter in 28L Package Technology, Incorporated P R E LIM IN A R Y October 1994 SEEO AutoDUPLEX Designation • Sym bol «identifies product as AutoDUPLEX device P rovides A u to D U P L E X " D ete c t Fu nction fo r


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    80c2510base-t10base-280c26+9aui/10base-tmd400142/-in233bt 2025 bhbel 100n transistor pin diagrambel 100n transistorbel 100nepe6047spulse transformers tp 12 PDF

    g23 schottky diode ST

    Abstract: ADP3500 ADP3500AST LQFP-64 5 amp 48 volt battery charger rtc circuit diagram
    Contextual Info: PRELIMINARY TECHNICAL DATA a CDMA Power Management System Preliminary Technical Data ADP3500 FEATURES Handles all CDMA Baseband and RF/IF Power Management Functions LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Four Li-Ion Battery Charge Modes


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    adp350064pincdma/cdma2000/pcsgpio/int50+7st-64a64-leadg23 schottky diode stadp3500astlqfp-645 amp 48 volt battery chargerrtc circuit diagram PDF

    coin counter

    Abstract: Battery charger 48 volt circuit diagram rev counter cdma power meter block diagram coin operated battery charger DIODE ko3 ADP3500 ADP3500AST LQFP-64
    Contextual Info: PRELIMINARY TECHNICAL DATA a CDMA Power Management System Preliminary Technical Data ADP3500 FEATURES Handles all CDMA Baseband and RF/IF Power Management Functions LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Four Li-Ion Battery Charge Modes


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    adp350064pincdma/cdma2000/pcsst-64a+964-leadcoin counterbattery charger 48 volt circuit diagramrev countercdma power meter block diagramcoin operated battery chargerdiode ko3adp3500astlqfp-64 PDF

    keypad code lock circuit flow chart

    Abstract: 2508 BVS diagram for digital coin timer
    Contextual Info: PRELIMINARY TECHNICAL DATA a CDMA Power Management System Preliminary Technical Data ADP3502 FEATURES Eleven LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Ultra Low standby supply current High accuracy battery charging 0.7%


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    adp350264-leadcdma/cdma2000/pcskeypad code lock circuit flow chart+22508 bvsdiagram for digital coin timer PDF

    Contextual Info: PRELIMINARY TECHNICAL DATA CDMA Power Management System Preliminary Technical Data ADP3500 FEATURES Handles all CDMA Baseband and RF/IF Power Management Functions LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Four Li-Ion Battery Charge Modes


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    64pincdma/cdma2000/pcsadp350032khz+2st-64a64-lead PDF

    Contextual Info: PRELIMINARY TECHNICAL DATA a CDMA Power Management System Preliminary Technical Data ADP3500 FEATURES Handles all CDMA Baseband and RF/IF Power Management Functions LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Four Li-Ion Battery Charge Modes


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    adp350064pincdma/cdma2000/pcsst-64a+164-lead PDF

    Coin Based Mobile Phone Charger

    Contextual Info: a CDMA Power Management System ADP3502 FEATURES 11 LDOs Optimized for Specific CDMA Subsystems 4 Backup LDOs for Standby Mode Operation Ultra Low Standby Supply Current High Accuracy Battery Charger 0.7% 3 Li-Ion Battery Charge Modes 5 mA Precharge Low Current Charge


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    adp350264-leadcdma/cdma2000/pcsldo11+532khzbat54su-64ms-026abdcoin based mobile phone charger PDF

    BU9873FJ

    Contextual Info: Datasheet Real-Time Clock RTC series I2C BUS Serial Interface RTC with High-precision Oscillation Adjustment BU9873 Outline Important Characteristics • ■ The BU9873 is a CMOS real-time clock, which has a built-in interrupt generation function. This product is


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    bu9873bu9873fj PDF

    Coin based mobile battery charger circuit diagram

    Abstract: coin box mobile charger circuit diagram circuit diagram for Coin based mobile battery charger Coin Based Mobile Phone Charger Coin based mobile battery charger block diagram for Coin based mobile battery charger 2508 BVS Coin based mobile battery charger circuit AC voltmeter pic ml621
    Contextual Info: a CDMA Power Management System ADP3502 FEATURES 11 LDOs Optimized for Specific CDMA Subsystems 4 Backup LDOs for Standby Mode Operation Ultra Low Standby Supply Current High Accuracy Battery Charger 0.7% 3 Li-Ion Battery Charge Modes 5 mA Precharge Low Current Charge


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    adp350264-leadcdma/cdma2000/pcsldo11+1432khzsu-64ms-026abdc03147coin based mobile battery charger circuit diagramcoin box mobile charger circuit diagramcircuit diagram for coin based mobile battery chargercoin based mobile phone chargercoin based mobile battery chargerblock diagram for coin based mobile battery charger2508 bvscoin based mobile battery charger circuitac voltmeter picml621 PDF