BVP DIODE Search Results

IGBT. CM50TF-12H

Abstract: CM50TF-12H
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

bvp DIODE

Abstract: 30-HV CM15TF-24H 7294b21 BWP 34
Contextual Info: m N BG X CM15TF-24H Powarex, inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SiXm /GBT IGBTMOD H-Series Module 15 Amperes/1200 Volts - O 8oP EuP D D BvP EvP BwP EwP S - DIA— (2 TYP.) I I e d -N — H ff TM L Description: Powerex IGBTMOD™ Modules are

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE •A -B■C BuPEuP BvPEvP TT E D LJ: S - DIA. 2 TYP. r — M - r r 1— F■ Description: R (BuP) I GuPo— I I ± ^ (BvP) GvPo— I L ^ (BwP) I GwPo— I EuP" EvP « EwP = u»—

CM30TF-24H

Abstract: igbt 600V 30A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

BUN DIODE

Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Contextual Info: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R

Contextual Info: # w m s CM30TF-12H r Powerex, Inc., 200Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S¡X~IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts BuP EuP BvP EvP BwP EwP 50 4 0 ^ 0 4 r -1 S - DIA— (2 TYP.) BuN EuN i - i B w N E vN r-i — K— — H-

CM50TF-12H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

600v 30a IGBT

Abstract: CM30TF-24H IGBT 1200V 60A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

BUN DIODE

Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
Contextual Info: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

BUN DIODE

Abstract: 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H
Contextual Info: CM15TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 15 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

BUN DIODE

Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Contextual Info: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

600v 30a IGBT

Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Contextual Info: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K

BUN DIODE

Contextual Info: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module

SOT-23 marking 301

Abstract: marking 301 sot-23 301 marking code sot-23
Contextual Info: Central" CMPD2836E CMPD2838E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT DUAL SILICON SWITCHING DIODES DESCRIPTION: The Central Semiconductor CMPD2836E and CMPD2838E are Enhanced versions of the C M PD2836 and CMPD2838 High Speed Switching Diodes. These devices are manufac­

Contextual Info: Low Cost, Precision Analog Front End and Controller for Battery Test/Formation Systems AD8451 Data Sheet FEATURES GENERAL DESCRIPTION Integrated constant current and voltage modes with automatic switchover Charge and discharge modes Precision voltage and current measurement

qf30aa60

Abstract: QF30AA40 IC 7403
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

IC 7403

Abstract: QF50AA40 QF50AA60 transistor bw 51
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

Contextual Info: niCROPAC I N D U S T R I E S IN C 42 E D b l l 2 b 40 OOOQTQti 1 B B H PI GaAs LIGHT-EMITTING DIODE “ PIGTAIL” 62017 TYPE GS 3040 \ •H IG H INTENSITY GaAIAs VERSION AVAILABLE MINIATURE HIGH EFFICIENCY LED WITH NARROW BEAM ANGLE GLASS/METAL WELDED PACKAGE

QM10TE-HB

Abstract: bup transistor bvp DIODE QM10 QM10T
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250

10205 transistor

Abstract: all transistor E80276 QM50TB-2H
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75

Contextual Info: niCRO PAC IN D U ST R IE S 42E IN C D b l l 2 b 4 G OOOCHOb H 1 B MPI GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE G S 3040 * HIGH INTENSITY G aA IA s VER SIO N A V A IL A B L E M i-U MINIATURE HIGH EFFICIEN C Y LED WITH N AR RO W BEAM A N G LE G LA S S/M E TA L W ELD ED P A C K A G E

k 2645 MOSFET

Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
Contextual Info: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology

bvp DIODE

Contextual Info: SFP9510 A dvanced Pow er MOSEET FEATURES B ^dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = lD = -1 0 0 V 1 -2 Q - 3 .6 A ■ 175°C Opereting Temperature ■ Extended Safe Operating Area

SD57a

Abstract: SSS6N80A T0-220F
Contextual Info: SSS6N80A A d va n ce d Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 800 V ^ D S o n = 2 . 0 £2 lD ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \tf\ (Max.) @ VDS = 800V