BVN 10 Search Results

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-1501F1/6501F1 DESCRIPTION Dice Material : GaP/GaP Yellow Green Light Color : Green Color PACKAGE CONFIGURATION Lens Color : Milky Diffused Surface Color : Black Tolerance : ± 0.25 mm 10 7.3 A 19.0 F G B

61501

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-11501RD1/61501RD1 DESCRIPTION Dice Material : GaAlAs/GaAs,DH Super Brightness Red Light Color : Red Color PACKAGE CONFIGURATION Lens Color : Milky Diffused Surface Color : Black Tolerance : ± 0.25 mm 22.0

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-1521RS2/6521RS2 DESCRIPTION Dice Material : GaAlAs/GaAs,SH Super Brightness Red Light Color : Red Color PACKAGE CONFIGURATION Lens Color : Milky Diffused Surface Color : Gray Tolerance : ± 0.25 mm 7.62

5 digit display 8 pin configuration

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-3362E2/8362E2 DESCRIPTION Dice Material : GaAsP/GaP Orange Light Color : Orange Color Lens Color : Milky Diffused Surface Color : Gray PACKAGE CONFIGURATION 0.8 Tolerance : ± 0.25 mm 5 4.8 DIGIT 1 A F

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-1401E1/6401E1 DESCRIPTION Dice Material : GaAsP/GaP Orange Light Color : Orange Color Lens Color : Milky Diffused Surface Color : Black PACKAGE CONFIGURATION PIN 1 Tolerance : ± 0.25 mm 5.4 8 A F 18.7

BVN-

Abstract: 7401F
Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-2401F1/7401F1 DESCRIPTION Dice Material : GaP/GaP Yellow Green Light Color : Green Color Lens Color : Milky Diffused Surface Color : Black PACKAGE CONFIGURATION 5.8 Tolerance : ± 0.25 mm DIGIT 1 A 8 16.0

3361 LED

Abstract: 3361e
Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-3361E2/8361E2 DESCRIPTION Dice Material : GaAsP/GaP Orange Light Color : Orange Color Lens Color : Milky Diffused Surface Color : Gray PACKAGE CONFIGURATION 0.8 Tolerance : ± 0.25 mm 5 4.8 F 14.0 2 DIGIT 1

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-1564G2/6564G2 DESCRIPTION Dice Material : GaP/GaP Green Light Color : Green Color Lens Color : Milky Diffused Surface Color : Gray PACKAGE CONFIGURATION 8.1 Tolerance : ± 0.25 mm 8 A F 17.3 14.2 E C D

Contextual Info: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

Contextual Info: Headers with Solder Pins, Pin Spacing 5.08 mm / 0.2 in, orange Pin spacing 5.08 mm / 0.2 in, orange Straight solder pin 250 V/4 kV/3 300 V, 10 A O W 12 A 0 /1 6 A O 300 V, 15 A 0 TO 300 V, 15 A « Mating direction perpendicular to PCB Item-No. No. of Item-No.

VN1710L

Contextual Info: VN1706 VN1710 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 170V 6Q 1.0A VN1706B VN1706L VN1706D 170V 10£2 1.0A — VN1710L — Advanced DMOS Technology High Reliability Devices

BHRM

Abstract: D665 103kn
Contextual Info: 補強リングを用いた鉄骨有孔ばりの力学特性 Mechanical Characteristics of Perforated Steel Beam with Reinforcing Ring 田中 秀宣＊ 中野 建蔵＊ Hidenori Tanaka Kenzo Nakano 大庭 秀治 ＊ 伊藤 倫夫＊ Shuuji Ohba Michio Itoh

Contextual Info: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V

Contextual Info: IRLR/U024A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology = 0.075 Í2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 15 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = 60V

IRF820

Contextual Info: IRF820 A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 3 .0 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRF730A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

SEC IRF730

Contextual Info: IRF730 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: SSF22N50A A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFS460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: Advanced Power MOSFET SFM 9214 FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ ^DS on = Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA (Max.) @ VDS= -250V

9z24

Contextual Info: SFW/I9Z24 Advanced Power MOSFET FEATURES BVqss - "60 V • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 pA Max. @ VOS= -60V

Contextual Info: IRLR/U130A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 JA(Max. @ VDS = 100V Lower RDS<oN) : 0.101 ilfly p .)

Contextual Info: IRL610A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 200 V 0.046Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IRFW/I634A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 8 .1 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V