BVE 100 Search Results

ISO 2768-1

Abstract: DIN ISO 2768-1 BVE-A-R001 BVE-M-R0002 DIN 2768-1 isabellenhutte BVE-M-R0002-5 27681 manganin 10m BVE-A-R0005
Contextual Info: Ausgabe / Issue : 16/10/2002 ISA-PLAN - Präzisionswiderstände precision resistors Typ / type BVE Technische Daten / technical data Widerstandswerte resistance values 0.2, 0.3, 0.5, 1 mOhm Toleranz tolerance Temperaturkoeffizient temperature coefficient ( tcr )

Precision Resistors

Abstract: BVE-A-R001
Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 0.2, 0.3, 0.5, 0.6, 1, 2 mOhm Toleranz Tolerance 1 %, 5 % Temperaturkoeffizient* Temperature coefficient *

BVE-A-R001

Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte mOhm Resistance values (mOhm) 0.2, 0.3, 0.5, 1 mOhm Toleranz Tolerance 1 %, 2 %, 5 % Temperaturkoeffizient Temperature coefficient (tcr)

Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte Resistance values 0.2, 0.3, 0.5, 0.6, 1, 2 mOhm Toleranz Tolerance 1 %, 5 % Temperaturkoeffizient* Temperature coefficient *

smd 27E

Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
Contextual Info: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

BT2222A

Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
Contextual Info: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.

Contextual Info: •PHOTO TRANSISTOR ▼CHARACTERISTICS BY MATERIAL T a = 2 5 ’C f W S i j i S H K S f iE Breakdown BVe^akdown OO.IfcCtCS m m m m I S i l i l i i; 5 u r r i r r f j VCEO TO -18 PS 502 VCEO 60 100 30 5 W m ÊSm ÊËSÊÈM . TYP». , 1c 50 150 ë S  ^ ü Ifâ it I

3N121

Abstract: 3n123
Contextual Info: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OtVICI •CLARITY 3N121 3N123 3N129 3N130 3N131 BVlfO yum NPN PNP PNP PNP PNP 20 25 10 20 30 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BVctO r»« (Jol) !(EO Vo« VMIN nA MAX uMAX .VMAX

pulse

Abstract: 10K100 s100
Contextual Info: PCN RESISTORS Diagram of pulse energy and power derating BVS power [W] 1M 100k 100k 1k 10k 100 10M 1k 10 100 1 10 0.1 1 1 s 10 s 100 s 1 ms 10 ms pulse width PCN Corporation 100 ms 1s Yokohama Business Office 10 s 100 s power [W] pulse energy [J] 10k PCN RESISTORS

2N2945A

Contextual Info: 2N2945A SILICON PNP TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 46 The 2N2945A is Designed for Low Level, High Speed Chopper Applications. MAXIMUM RATINGS 1 = EMITTER Ie 100 mA Vec -20 V Pd i s s 2.0 W @ Te $ 25 0C 2 = BASE Tj -65 °C to +200 0C Ts t g -65 0C to +200 0C

2N3033

Contextual Info: 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 200 mA < o m Ie 100 V p d is s 1.0 W @ Te = 25 °C Tj -65 0C to '200 0C Ts t g -65 0C to '200 0C

3N123

Contextual Info: ^zmi-donauckoi , inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450 » t-.in : 001 ELECTRICAL DATA ABSOLUTE MAXIMUM RATING

15053-46B

Abstract: CM 8116 8114
Contextual Info: 15053-46B - CL— 1 Rd Cohm3 220 FCR8.0M5 Vdd- 5 CV3 Flg.a-d Ta- 20 Cdeg3 Typical a. V1H/V1L CV3 c . Fosc^ C%3 — »«— lasfes.» T -3 -2 -3 400 300 JU* -I- — I_ A. d. Trise CuS3 200 100 60 e. Duty 55 50 45 40 4 S3 j 1 f. Vstart l%3 52.4 52.1 .-j«

2N2273

Contextual Info: 2N2273 GERMANIUM PNP TRANSISTOR DESCRIPTION: The 2N2273 is Designed for General Purpose Switching, and VHF Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS < o m Ie p d is s 1OO mA -15 V 15O mW @ Ta $ 25 °C Tj -65 0C to +1OO 0C Ts tg -65 0C to +1OO 0C

Contextual Info: HTE D TAIWA N LITO N E L E C T R O N I C fl03 51 ^5 G G G 3 DÔ S bT3 • TLITJ ■ FEATURES 1. High current transfer ratio CTR:MIN. 100% at lF = 10mA, V c e = 10V 2. Response time ton:TYP. 3(is at VCC=10V , lc = 2mA, RL =100Q 3. Input-output isolation voltage: LTV4N35 (V|SO:3,550Vrms)

2N3035

Abstract: TRANSISTOR 2N3035
Contextual Info: 2N3035 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS Ie 200 mA Vc b 50 V Pd i s s 1.0 W @ Te $ 25 0C Tj -65 to + 200 °C Ts t g -65 to + 200 0C

Transistor D 798

Contextual Info: ÀSII 2N3020 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 8O V Pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C Ts t g -65 0C to +2OO 0C

MMBT101

Abstract: PN101
Contextual Info: PN101/MIUIBT101 NAT L SEMICOND DISCRETE D tSG113G d O ^ a i D PN101 S 'T - 2 7 - 7 3 . - National ' Semiconductor WA Jlm ] HE M M BT101 TO-236 (SOT-23) TO-92 E0 U TU G /10100-5 C TUG /10100-1 NPN General Purpose Amplifier Electrical Characteristics t a

2N2405

Abstract: C2035
Contextual Info: ÀSII 2N2405 SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 9O V pd is s 1.O W @ Ta " 25 0C pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C

bf258

Contextual Info: 'Zf v y ^ iß* \ ~"l ^ B F 257 • B F 258 ■ B F 259 'NPN HIGH VOLTAGE VIDEO AMPLIFIER .VîtfAÿï'^B ïÊSaWî?1,A ^ i K ! ■ÎXÂc-l^B « . V.d'.tr J THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS.

MPSU03

Abstract: MPSU04 MPS-U03 MPS-U04
Contextual Info: MPS-U03 SILICON MPS-U04 ST YLE 1: PIN 1. EM ITTER 2. BASE 3. COLLECTOR NPN silicon annular plastic transistors designed for video output circuits utilizing an emitter-follower driver and for horizontal driver applications in television re­ ceivers. CASE 152-02

2N6211

Abstract: te 2443
Contextual Info: 2N6211 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. 2.0 A VcB 275 V 225 V o m Ic V MAXIMUM RATINGS PACKAGE STYLE TO- 66 INCHES A B C D £ f G H J K L M 35 W @ Te # 25 0C P d is s Tj

PTA06

Contextual Info: Central CMPTA06 NPN CMPTA56 PNP Sem i c o n d u c t o r C o r p . COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R C M PTA06, CM PTA56 types are co m p le m e n ta ry silico n tra n s is to rs manufactured by the epitaxial planar process,