BV3 MARKING Search Results

CH-2540

Abstract: Micro Crystal Switzerland ocxo 10MHz 12v 1cd27
Contextual Info: OCXOW Oven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *

OCXO 20 MHZ

Abstract: OCXO CH-2540 60 Hz crystal oscillator BV3 marking
Contextual Info: OCXOWTOven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ± 0.7 ppm * < ± 4.0 ppm * < ± 0.1 ppm *

2SB624

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

sot-23 bv4

Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

sine wave voltage controlled oscillator

Abstract: sine wave crystal controlled oscillator 20mhz crystal oscillator dil package CH-2540 marking K "micro x" crystal oscillator 1 MHz 4 pins
Contextual Info: OCXOWSOven Controlled Crystal Oscillator Sine Wave Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.2 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *

sine wave voltage controlled oscillator

Abstract: scocxowt CH-2540 4 pin 20 MHz crystal oscillator
Contextual Info: SCOCXOWS Ultra Tight Stability Sine Wave Output 3.3 V Power Supply FREQUENCY STABILITY up to 20 MHz NOTE 1 OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V see note 1 < ±0.3 ppm * < ±2.5 ppm * < ±0.025 ppm TEMP. RANGE *

Contextual Info: OCXOW Oven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *

CH-2540

Abstract: ocxow
Contextual Info: OCXOW Oven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ± 0.7 ppm * < ± 4.0 ppm * < ± 0.1 ppm *

Contextual Info: OCXOWTOven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *

scocxowt

Abstract: CH-2540 54 mhz crystal oscillator
Contextual Info: SCOCXOWT Ultra Tight Stability HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V ≤ 20 MHz > 20 MHz LOAD ±10%: NOTE 1 see note 1 < ±0.3 ppm * < ±2.5 ppm * TEMP. RANGE *

CH-2540

Contextual Info: OCXOWTOven Controlled Crystal Oscillator HC-MOS Output 3.3 V Power Supply FREQUENCY STABILITY OVER: OPERATING TEMP. RANGE : LONG TERM AGING 1ST YEAR: 10 YEARS: SUPPLY VOLTAGE ± 0.15 V LOAD ±10%: NOTE 1 see note 1 < ±0.7 ppm * < ±4.0 ppm * < ±0.1 ppm *

BV4 pnp

Abstract: BV4 transistor 2SB624 2SD596
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB624

Abstract: BV4 transistor marking BV4 transistor bv5
Contextual Info: 2SB624 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -0.7 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 0. 35

2SB624

Abstract: TRANSISTOR BV3 BV4 transistor
Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage

hFE-200 transistor PNP

Abstract: TRANSISTOR BV3
Contextual Info: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

sot-23 bv2

Abstract: marking BV4 2SB624
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage

2SB624

Abstract: 2SD596 BV4 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

hFE-200 transistor PNP

Abstract: 2SB624
Contextual Info: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SB624

Abstract: 2SD596
Contextual Info: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.

Contextual Info: 2SB624 PNP Epitaxial Planar Transistors COLLECTOR SOT-23 3 3 P b Lead Pb -Free 1 BASE 1 2 2 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V

sot-23 bv2

Abstract: 2SB624 2SD596
Contextual Info: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.

2SB624

Contextual Info: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA

bv5 300

Abstract: 2SB624
Contextual Info: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation

Bv4 smd transistor

Abstract: MARKING SMD PNP TRANSISTOR BV5 TRANSISTOR SMD BV4 CSB624 equivalent transistor smd 3 em 7 sot-23 MARKING bv SMD TRANSISTOR BV5
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and