BV UI 21 Search Results

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

SKP24A

Abstract: sis 968 P110a 5KP78A 5KP10A 5KP110A 5KP11A 5KP12A 5KP14A 5KP15A
Contextual Info: NEW ENGLAND SEMICONDUCTOR 5KP5.0A thru 5KP110A 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR O AVAILABLE IN VOLTAGES FROM 6.7V THRU 128V 0.3 1 0 + /-0 .0 1 0 The NES 5KP5.0 to 5K.P110A series o f transient suppressor diodes are designed to protect electronic equipment from failure due to over voltage transients. The devices

4pk sot23

Abstract: bm 8900 SOT-23-6 D/A maa 503 OEM 615 TQ5M31 mbae o3cc
Contextual Info: WIRELESS COMMUNICATIONS DIVISION o#Üû„T6 Vdd û2LS62 Gain/IP3/current ¯ adjustment 50 ohm LO Ä INPUT Vdd IF GIC GND LO RF WT8P64 Ü"\°í Ú#LF IF OUT „2 GND „zst 50 ohm RF INPUT # Ä ¶¬ ân TQ5M31 Q… M= \ PCS Á& Q¡, ISM IYe M:, GPS e-}, L

Contextual Info: /=T SGS-THOMSON A T /. Q a n K g ^ n L g g irM O ig i_ A M 2 7 2 9 - 1 1 0 RF & M I C R O W A V E T R A N S I S T O R S S -B A N D R A D A R A P P L I C A T I O N S • R EFR AC TO R Y/G O LD M ETALLIZATION ■ EM ITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY

n611

Abstract: 2n5188
Contextual Info: unl- 2onauatoi ZPtoauet*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A TELEPHONE: (973 378-2922 (212) 227-8006 FAX-(973| 2N5188 SILICON NPN HIGH VOLTAGE TRANSISTOR Max/mum Ratings, Absolute-Maximum Values: OOU.KOTOIt-TO-BASK V U l / l ' A C K . Venn OOUJiCTOIi-TO-KMITTKIl

BAVP

Contextual Info: ADVANCED POùlER TECHNOLOGY b lE D □ E S T 'IG 'i DDDDflDS TOT • AVP ADVANCED POW ER Te c h n o l o g y • .«<■> ill POWER MOS IV™ APT802R4GN APT752R4GN APT802R8GN APT752R8GN 800V 750V 800V 750V 4.3A 4.3A 4.0A 4.0A 2.40Q 2.40i2 2.80Q 2.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

6045h

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • DZS?^ 000GÖ21 IS? « A V P ADVANCED POW ER T e c h n o lo g y 9 POWER MOS IV _ APT6040HN 600V 16.5A 0.40Q APT5540HN 550V 16.5A 0.40Q APT6045HN 600V 15.5A 0.45D APT5545HN550V15.5A 0.45H N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

LM119

Contextual Info: L M 1 1 9 - L M 219 L M 319 S G S -T H O M S O N im HIGH SPEED DUAL COMPARATORS . . . . . TWO INDEPENDENT COMPARATORS OPERATES FROM A SINGLE+5V SUPPLY TYPICALLY80ns RESPONSE TIME AT ±15V MINIMUM FAN-OUT OF 2 EACH SIDE MAXIMUM INPUT CURRENT OF 1nA OVER OPERATING TEMPERATURE RANGE

LA9LB920

Abstract: SCHNEIDER MOTOR PROTECTION circuit breaker IEC 439-1 LA9-LB920 GV3-ME40 GK3EF40 GV3-A03 GV3A01 schneider GV2ME GV3-A01
Contextual Info: Characteristics TeSys protection components Thermal-magnetic motor circuit-breakers Environment Circuit-breaker type GV2-ME Conforming to standards EN 60947-1, 947-2, 947-4-1, EN 60204, UL 508, CSA C22-2 n° 14, NF C 63-650, 63-120, 79-130, VDE 0113, 0660

Contextual Info: KSP24 NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Tfl = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta= 25°C) Derate above 25 °C Junction Temperature

pci root bridge

Abstract: eTSEC GMII Initial
Contextual Info: Freescale Semiconductor Technical Data Document Number: MPC8544EEC Rev. 0, 04/2008 MPC8544E PowerQUICC III Integrated Processor Hardware Specifications 1 MPC8544E Overview This section provides a high-level overview of MPC8544E features. Figure 1 shows the major functional units within

NF800-CEP

Abstract: NF1250-SS DSN40 no-fuse Circuit breaker Mitsubishi
Contextual Info: MITSUBISHI ELECTRIC Low Voltage Switchgears Moulded-Case Circuit Breakers Disconnectors WSS, PSS & Super Series 3 A – 1600 A Technical Catalogue 2004 AUDIN - 8, avenue de la malle - 51370 Saint Brice Courcelles - Tel : 03.26.04.20.21 - Fax : 03.26.04.28.20 - Web : http: www.audin.fr - Email : info@audin.fr

IEC 947-1

Abstract: IEC 269-1 IEC-947-5-1 AC15 B300 A300 A600 B300 DC-13 Q600 R300 947-1
Contextual Info: Control and signalling units Ø 22 General : pages 1/2 to 1/9 References : pages 1/14 to 1/53 Dimensions : pages 1/54 to 1/61 Harmony style 4 Pushbuttons, switches and pilot lights, with chromium plated metal bezel Characteristics Environment 1 Protective treatment

25CC

Abstract: AM2952 MB2052 MB2052B
Contextual Info: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2805-1 ,PS2805-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER NEPOC Series- DESCRIPTION T h e PS2805-1 and P S 2 805 -4 are o p tica lly cou pled iso la to rs con tain ing G aA s light em itting d io d e s and an NPN

Contextual Info: TOSHIBA 3SK259 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK259 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. TV TUNER VHF W ID E BAND RF AM PLIFIER APPLICATIONS. 2.1 • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.025pF Typ.

Contextual Info: P4KA SERIES AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-6.8 to 43 Volts 400 Watt Peak Power 1.0 Watt Steady State FEATURES ♦ Plastic package has Underwriters Laboratory Flammabillty Classification 94V-0 ♦ Glass passivated junction ♦ Exclusive G.l. PAR construction

Contextual Info: ISOCOfl COMPONENTS LTD 4886510 ISOCOH INC ?5C D • 4flflfc,51D Q00D172 5 2 7 75C 0 0 1 7 2 D H11D1 H11D2 H11D3 H11D4 ■ iso ¿ //- &B High Voltage Optically Coupled Isolators PACKAGE DIMENSIONS IN INCHES MM -I H 066 t t6.2000» rsc (6 10) • o o c^ L J l_l L J

Contextual Info: 400 WATT TRANSIENT VOLTAGE TZB-SERIES SUPPRESSOR DIODES 5.5V to 342V VR B CASE FEATURES: • • • • • R DESCRIPTION . a low cost commercial product for use in applica­ tions where large voltage transients can perma­ 400 Watts Peak Power - 1 ms

EN 60947-5-1 pressure limits

Abstract: A300-Q300 A600 36172-EN A300 B300 Q300 Q600 R300 ZBE-201
Contextual Info: Characteristics 1 Control and signalling units Ø 22 Harmony XB5, plastic Pushbuttons, switches and pilot lights Environment 1 2 Protective treatment standard version Ambient air temperature around the device “TH” Storage °C - 40…+ 70 Operation °C

MPC8544DVTALF

Contextual Info: Freescale Semiconductor Technical Data Document Number: MPC8544EEC Rev. 1, 06/2008 MPC8544E PowerQUICC III Integrated Processor Hardware Specifications 1 MPC8544E Overview This section provides a high-level overview of MPC8544E features. Figure 1 shows the major functional units within

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

IRFPO44

Abstract: IRFP045 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90
Contextual Info: HE D I 4ÛSS4S2 aGdâ71E Data Sheet No. PD-9.583A 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER X R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFPÜ44 IRFPQ45 HEXFET TRANSISTORS N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-247AC TO-3P Plastic Package

XCM NFC 63-145 y2

Abstract: XCM-A110 XCM-A102 XCMA102 XCM-A115 XCM-F102 NFC 63-145 Y2 XCM-F110 XES-P2151 XCKJ10511H29
Contextual Info: Limit switches Double insulated, types XCK-P and XCK-T General characteristics Environment Conforming to standards 3 Products IEC 947-5-1, IEC 337-1, EN 60 947-5-1, NF C 63-146, VDE 0660-200, UL 508, CSA C22-2 n° 14 Machine assemblies IEC 204-1, EN 60 204-1, NF C 79-130