BV 726 B Search Results

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

BV 726

Abstract: mosfet analog switch D129 D125
Contextual Info: These drivers were designed to function as a level shifter and buffer between low level logic and the control gate of FET analog switches. Output voltage ratings are as high as 50V. U T P U T S OFF Level v out OFF Basic Part Number (Note 2) I N P U T S D125

S-0150-01

Abstract: HYPERTAC CONTACT PIN 18024 S-0250-01 HYPERTAC mdm S-0350-01 SH463 S0150.01 extraction tool S0150-01 a2700 AF8 CRIMPING TOOL
Contextual Info: L Series Modular Connectors 5.50 8.25 11.00 11.00 A Therefore a “step” is defined as the length used by each assembled element. - An elementary step is defined as 5.50 mm - The letter “A” is the sum of the dimensions of the contact elements. Hypertac modular connectors employ a do-it-yourself

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

DF412

Abstract: DF320 DF320A SILICONIX df412 D125 D129 D169 DF322 DF328 dual MOS ANALOG SWITCHES
Contextual Info: These drivers were designed to function as a level shifter and buffer between low level logic and the control gate of FET analog switches. Output voltage ratings are as high as 50V. U T P U T S OFF Level v out OFF Basic Part Number (Note 2) I N P U T S D125

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

Contextual Info: 4 DE D E3 34^=1738 0 0 0 1 1 1 0 A ^ S E N I FASCO INDS/ SENISYS r -^ 1 ^ 7 i Array Chips — Detectors Clairex offers a broad range of custom and stock dual and multichannel chips and arrays. Chips may be selected for special electrical requirements, i.e.,

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

bv32

Abstract: G.729.1 G.729D BV16 BroadVoice16 hindi ma MA HINDI thyssen pesq G722
Contextual Info: THE BROADVOICE SPEECH CODING ALGORITHM Juin-Hwey Chen and Jes Thyssen Broadcom Corporation, Irvine, California, USA ABSTRACT This paper describes the BroadVoice speech coding algorithm, which has been standardized as PacketCable , SCTE®, and ANSI standards for VoIP cable telephony. The BroadVoice family

TN0624N2

Contextual Info: ^ S u p e rte x in c . T N 06C Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss/ R DS ON ' d (ON) V GS(th) b v dgs (m ax) (min) (max) TO-39 TO-92 200V 6S i 1.0A 1.6V

TN0535

Contextual Info: - J / i r. ^ r L TN0535 TN0540 z N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON V (max) (min) (max) TO-92 DICE+ 350V 22Q 250mA 2.0V TN0535N3 TN0535ND 400V 22Q 250mA 2.0V TN0540N3 TN0540ND g S(U i ) Order Number / Package

pqhxn

Abstract: hn 729
Contextual Info: 0123456789 2 2122742     0  ÛÜßÝÞ 5798274 614!2 "##5299659 $86%2 àáâãäåáæçèéêëìäíîáïðñìä òäóðôôéõäáôäö÷åøäóçùñéôéùóäúêèáûùëäüäèùêï÷ôîùùä {|}~€‚€ƒ„

Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM

NA51 transistor

Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn
Contextual Info: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding

Phoenix Contact UK 5N fbi

Abstract: EX-95
Contextual Info: Module no:3005073 LabelId:3005073 Operator:Phoenix 18:50:29, Donnerstag, 28. Juni 2001 UK 10 N Terminal width 10.2 IEC 2 [mm ] rigid solid flexible stranded AWG IEC 947-7-1 0.5-16 0.5-10 20-6 EN 50 019 * 0.5-16 0.5-10 – I U [A] [V] 76 800 73/57 726 * Certificate no.: KEMA Ex-95.D.3678U

Contextual Info: Module no:3008012 LabelId:3008012 Operator:Phoenix 18:54:37, Donnerstag, 28. Juni 2001 UK 35 Terminal width 15.2 IEC rigid flexible I U stranded AWG [A] [V] IEC 947-7-1 0.75-50 0.75-35 18-0 150 1000 EN 50 019 * 0.75-50 0.75-35 – 145/112 726 2 [mm ] solid

Ex-94

Abstract: 7133U UK6N
Contextual Info: Module no:3004524 LabelId:3004524 Operator:Phoenix 18:50:03, Donnerstag, 28. Juni 2001 UK 6 N Terminal width 8.2 IEC 2 [mm ] rigid solid flexible stranded AWG IEC 947-7-1 0.2-10 0.2-6 24-8 EN 50 019 * 0.2-10 0.2-6 – I U [A] [V] 57 800 53/38 726 * Certificate no.: KEMA Ex-94.C.7133U

oni 350 photo

Contextual Info: TN 06D LJ Supertex me. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON) I d (ON) ^G S (th ) Order Number / Package (max) (min) (max) TO-92 DICE* 350V 10Q 1.0A 1.8V TN0635N3 TN0635ND 400V 10 fi 1.0A 1.8 V TN0640N3

3vf1

Abstract: 3TF44 siemens 3th42 3VF6 3VU13 7pr41 3TF3 3TH44 siemens 3th2 3na3 372 siemens
Contextual Info: Anhang Normen und Approbationen Bezeichnungszubehör für Schaltgeräte Seite Publikationen, Normen, Bestimmungen, Approbationen – Wichtige Publikationen und Bestimmungen – Prüfbehörden, ApprobationsKennzeichen und Approbationspflicht – Schiffsklassifikationsgesellschaften

s125 transistor

Abstract: The 1901 is a COMMON BASE transistor
Contextual Info: 315 689-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • Ultra Fast Rise Time — 2.8 nS Typical Wide Bandwidth — 225 MHz Typical Variable Gain — 0 to 80 % On Board Reference Output 50 Vpp Output Voltage Swing Blanking Capability

AUIRF7648M2TR

Contextual Info: PD - 96317A AUTOMOTIVE GRADE AUIRF7648M2TR AUIRF7648M2TR1 DirectFET™ Power MOSFET ‚ V BR DSS RDS(on) typ. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile

AUIRF7648M2

Abstract: BV 726 B
Contextual Info: PD - 96317B AUIRF7648M2TR AUIRF7648M2TR1 • • AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5mΩ other Heavy Load Applications max. 7.0mΩ

AUIRF7648M2TR1

Contextual Info: PD - 96317 AUTOMOTIVE GRADE AUIRF7648M2TR AUIRF7648M2TR1 DirectFET™ Power MOSFET ‚ V BR DSS RDS(on) typ. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile