BV 724 C Search Results

BV-1

Abstract: BV 724 C LL916 LL916A LL916B
Contextual Info: LL916, LL916A, LL916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

FM Communication Receivers

Abstract: AFC diode air variable capacitor FV1043
Contextual Info: FV1043 TUNER AFC DIODE The FV1043 is a variable capacitor diode intended for AFC applications, VHF TV Max. 0.5 Max. 0.45 applications, FM Receivers. Air craft communications gear, and other receivers in the 1 MHz to 500 MHz. Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9

mmbt7002

Contextual Info: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor FEATURES • High density cell design for low RDS ON . • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capability. 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta=25 OC)

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

UAA2001

Abstract: UAA2022 MC1310 motorola stereo decoder TDA3300B MC1310 Circuit UAA2022 tda3300 MC1310 radio MC1310 fm multiplex stereo decoder TCA4500
Contextual Info: . . . reflecting Motorola’s continuing commitment to semicon­ ductor products necessary for consumer system designs. This tabulation is arranged to simplify first-order selection of con­ sumer integrated circuit devices that satisfy the primary functions

MS3108E

Abstract: MS25183 MS3108E assembly instructions CA3106E MS3102R MS3106F cannon CA3106E cannon MIL-C-5015 CA3108E MS3108R
Contextual Info: MIL-C-5015 Connectors ITT Cannon is the foremost manufacturer of MS and MS type connectors with the widest range of connector styles, sizes and variations in the industry. These connectors utilize the finest materials, which, along with precision manufacturing and rigid

MS3108E

Abstract: CA3106E MS3102R MS3106F CA06R MS3108E assembly instructions MS3191 ITT 232-2 CA3108E MS25183
Contextual Info: MIL-C-5015 Connectors ITT Cannon is the foremost manufacturer of MS and MS type connectors with the widest range of connector styles, sizes and variations in the industry. These connectors utilize the finest materials, which, along with precision manufacturing and rigid

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

CA3108R

Abstract: MS25183 CA3108E CA3106E MS3108E cannon CA3106E MS3106F MS3191 MS3101F CA3102E
Contextual Info: MIL-C-5015 Connectors ITT Cannon is the foremost manufacturer of MS and MS type connectors with the widest range of connector styles, sizes and variations in the industry. These connectors utilize the finest materials, which, along with precision manufacturing and rigid

mc3393

Abstract: UAA2004 TDA3300B UAA2003 tda3300 MC3393 prescaler UAA2003B TDA3030B MC1374 UHF Phase Shifter
Contextual Info: . . . reflecting Motorola’s continuing commitment to semicon­ ductor products necessary for consumer system designs. This tabulation is arranged to simplify first-order selection of con­ sumer integrated circuit devices that satisfy the primary functions

TDA3300B

Abstract: TDA3030B tda3300 TDA3301B TDA3301 organ master oscillator motorola organ circuit one chip tv mc13002 TDA3190P
Contextual Info: . . . reflecting Motorola’s continuing commitment to semicon­ ductor products necessary for consumer system designs. This tabulation is arranged to simplify first-order selection of con­ sumer integrated circuit devices that satisfy the primary functions

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

NA51 transistor

Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn
Contextual Info: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding

Contextual Info: ca_A1-A163.qxd:Layout 1 2/9/11 7:48 PM Page 1 ca_A1-A163.qxd:Layout 1 2/9/11 7:50 PM Page 83 MS-E/F/R/ER MIL-C-5015 Connectors POTTING ER CONNECTORS Solder Contact Termination These Lightweight potting connectors provide resistance to salt water, fuels, etc., and will withstand the effects of high

N06A

Contextual Info: T N 06A Ljf Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package l i BVdss/ R dS<ON max) b v dgs V gs(ih) (max) TO-39 TO-92 DICE* TO-220 Quad P-DIP Quad C-DIP* 60V

TN0535

Contextual Info: - J / i r. ^ r L TN0535 TN0540 z N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON V (max) (min) (max) TO-92 DICE+ 350V 22Q 250mA 2.0V TN0535N3 TN0535ND 400V 22Q 250mA 2.0V TN0540N3 TN0540ND g S(U i ) Order Number / Package

Contextual Info: T N 06C Çf Supertex me- Low Threshold / p \ N-Channel Enhancement-Mode M à / Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ t Order Number / Package ' d ON) ^G SIth) BVDGs (max) (min) (max) TO-39 TO-92 200V 6n 1.0A 1.6V TN0620N2

SN75440

Abstract: D2872 iec 896-1
Contextual Info: TEXAS INSTR Ì L I N / I N T F O il »Ëj| fiTbl?24 0075030 S 896 1 72 4 TEXAS INSTR LIN/INTFC 9 1 D 75838 D SN75440 QUADRUPLE PERIPHERAL DRIVER D2872. JANUARY 1985—REVISED SEPTEMBER 1986 1 Y [T High-lmpedance Inputs Compatible with CM OS. MOS, and TTL Levels

Lariteck

Abstract: F9232 STR 61001 EASY2254 T60403-L5032-X017 smd PULSE TRANSFORMER ST5141 T60403-L4021 bv ei 301 2107 MD 5408
Contextual Info: 6, 0(16 ,&V IRU &RPPXQLFDWLRQV Framing and Line Interface Component for PCM 30 and PCM 24   FALC 54 and FALC -LH PEB 2254 PEB 2255 Preliminary transformer recommendation Application Note 10.98 Q@7Ã!!$$ Sr‰v†v‚ÃCv†‡‚…’à 8ˆ……r‡ÃWr…†v‚Ã)Ã

Toshiba TB 1230 N

Contextual Info: TOSHIBA UC/UP S4E t> m ^0^724^ G0 2 n 23 TOSHIBA TMPZ84C00A TM PZ84C00A P-6 / TM PZ84 C 0 0A M -6 /TM PZ84C00A T-6 TM PZ84C00A P-8 /TM PZ84C 00A M -8 /TM PZ84C00A T-8 T M P Z 8 4 C 0 0 A P - 10 / T M P Z 8 4 C 0 0 A M - 10 / T M P Z 8 4 C 0 0 A T - 10 TLC S-Z80 M P U

IRF MOSFET driver

Abstract: SN75447 d3004 transistor SN75372 DUAL MOSFET DRIVER transistor bipolar driver schematic D3004 IRF151 362 MOSFET M3Y driver transistor
Contextual Info: SN75372 DUAL MOSFET DRIVER S L L S 0 2 5 A - D3004, JULY 1986 • Dual Circuits Capable of Driving High-Capacltance Loads at High Speeds • Output Supply Voltage Range up to 24 V • Low Standby Power Dissipation D O R P PACKAGE TOP VIEW 1A [ 7 ^ 7 E[ 2

Contextual Info: ASSESS? RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022É1, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A,20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

NTR 606

Contextual Info: January 1999 S E M IC O N D U C T O R NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very