BV 42 Search Results

2N3571

Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN

P6KE10C

Abstract: P6KE12A P6KE22 P6KE10 P6KE10A P6KE10CA P6KE11 P6KE11A P6KE11C P6KE11CA
Contextual Info: Max. Clamping Voltage @ lpp Max. Peak Pulse Current Max. Voltage Temp. Variation Of Bv Type Number Reverse Standoff Voltage UNI (Bl) VR (V) Min (V) Max (V) It (mA) IR (uA) Ve (V) Ipp (A) Breakdown Voltage BV Volts @ lt O Type Number O Max. Reverse Leakage

Contextual Info: SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-Ch D2 BV D2 Low on-resistance D1 D1 Fast switching performance SO-8 S1 G1 Description G2 S2 60V DSS R DS ON 36mΩ ID 6A -60V 72mΩ -4.2A P-Ch BV DSS RDS(ON)

Bv 42 transistor datasheet

Abstract: email is 53 dynet BV 53
Contextual Info: Dynetics BV Dynetics BV; De Maas 17C; 5684PL Best; The Netherlands http://www.dynetics.nl Email: sales@dynetics.nl Tel: +31 499 371007 Fax: +31 499 372008 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

HF42A060SCE

Abstract: HFA100MD60C
Contextual Info: Preliminary Data Sheet PD-20612 12/98 HF42A060SCE Hexfred Die in Wafer Form 600 V Size 42 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF42A040SCE

Abstract: HFA120MD40C 01-988
Contextual Info: Preliminary Data Sheet PD-20611 12/98 HF42A040SCE Hexfred Die in Wafer Form 400 V Size 42 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

Contextual Info: DB3X317K Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB3X317K Product type: Schottky Barrier Diode Parameters *$ .MODEL DB3X317K D + IS=4.4280E-6 + N=1.0123 + IKF=998.99 + RS=0.14971 + ISR=425.08E-9 + NR=1.5000 + BV=40 + IBV=100.00E-6

BC847UF

Abstract: BC857UF
Contextual Info: BC857UF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF Ordering Information Type NO. Marking BC857UF Package Code BV SOT-323F

OPF56

Abstract: OPF560 OPF561 OPF562
Contextual Info: bV^ÖSÖD Product B ulletin O PF560 OOOEßBb OPTEK 425 F ebruary 1996 125 MHz Fiber Optic Receiver Types OPF56Û, OPF561, OPF562 Features • • • • • Low Cost Data Rates up to 155 MBd Wide Temperature Range SMA, ST*, or plastic cap style Wave Solderabfe

IRFZ44A

Abstract: J50A
Contextual Info: IRFZ44A Advanced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 17510 Operating Temperature ■ dss = ^D S on = lD = 60 V

PSA56

Contextual Info: TOSHIBA MPSA55,56 Transistor Silicon PNP Epitaxial Type Designed For Use as Medium-Power Driver and Low-Power Outputs Features • High Collector-Emitter Breakdown Voltage - BV c b o = -60Vdc Min. @ lc =-1 .OmAdc M PSA55 -80Vdc (Min.) @ lc = 1 .OmAdc M PSA56

Contextual Info: Advanced IRFW/I550A Power MOSFET FEATURES BV DSS = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 40 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

AP6KE300

Abstract: AP6KE250 AP6KE27 AP6KE15 AP6KE120
Contextual Info: P6KE6.8 C A - P6KE440(C)A Features • • • • • • Glass passivated junction. 600W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for

Contextual Info: Power Splitter Notes: • Non-catalog model. Please consult factory for price and delivery. • General Quality Control Procedures and Environmental Specifications are given in Mini-Circuits Guarantees Quality.

n4005

Abstract: microphone Elected 2N3904 44-PIN MC14011B MC14538B MC3401 MC34011A RS-470 electret mic terminals
Contextual Info: Order this data sheet bv MC34011WD MC34011A Advance Information ELECTRONIC TELEPHONE CIRCUIT * Provides All Basic Telephone Station Apparatus Functions in a Single IC, Including DTMF Dialer; Tone Ringer, Speech Network and Line Voltage Regulator * DTMF Generator Uses Low-Cost Ceramic Resonator with Accurate Frequency Synthesis Technique

Bex c 209

Abstract: BEM 45 ggr 86 bgt 618 BFK 67 gex smc marking ghm transistor bfx 73 SMCJ10 SMCJ11
Contextual Info: Features • • • • • • 0.280 7.112 0.260 (6.604) Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for

Contextual Info: SSH10N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V

ssf6014a

Abstract: SSF-6014 30V 60A power p MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V SSF6014 pn junction diode
Contextual Info: SSF6014A Feathers: ID =60A „ Advanced trench process technology BV=60V „ avalanche energy, 100% test Rdson=14mΩ（max.） „ Fully characterized avalanche voltage and current Description: The SSF6014A is a new generation of middle voltage and high current N–Channel enhancement mode trench power

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • – Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout

P4KE10

Abstract: P4KE10A P4KE11 P4KE11A P4KE51C P4KE10C P4KE10CA P4KE11C P4KE11CA P4KE12
Contextual Info: P4KE SERIES Max. Reverse Leakage @VR Max. Clamping Voltage @ lpp Max. Peak Pulse Current Reverse Standoff Voltage UNI (Bl) VR (V) Min (V) Max (V) It (mA) IR (uA) Ve (V) Ipp (A) Breakdown Voltage BV Volts @ lt o o Type Number o'* Type Number Max. Voltage

ECG2406

Abstract: ECG399 resistor 47k mp sot 23 ECG2364 ECG2368 resistor 4.7k SP SOT23 ECG2363 ECG2366
Contextual Info: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Basa Volts bvcbo Collector To Emitter Volts bv C eo Basa to Emitter Volts Max. Collector Current I j Amps b v eb o Max. Device Diss. PD

AT49LV001T-12JC

Contextual Info: Features • • • • • • • • • • Single Supply for Read and Write: 2.7 to 3.6V BV , 3.0 to 3.6V (LV) Fast Read Access Time - 70 ns Internal Program Control and Timer Sector Architecture – One 16K Byte Boot Block with Programming Lockout

pn junction diode

Abstract: rg902 p-n junction diode VPS-80 1RLU014 ss 050a
Contextual Info: STE » MÔSS4S2 GÜ1232D 3Ö2 • INR IRLD110 IO R INTERNATIONAL R ECTIFIER Electrica Characteristics @ T j = 25°C unless otherwise specified Parameter BV^ss Drain-to-Source Breakdown Voltage ABVqss/a Tj Temp. Coefficient of Breakdown Voltage Static Drain-to-Source On Resistance

Contextual Info: S F W /I9 52 0 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology R DS on = ■ Lower Input Capacitance In = -6.0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature