BV 020 Search Results

BV-A301RD

Abstract: BV-A302RD BV-A303RD BV-A304RD BV-A305RD BV-A305RE BV-A306RD BV-A30DRD BV-M301RD BV-M305RD
Contextual Info: Part No. Digit Size 0.30" Five-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-A301RD BV-A305RD BV-A305RE BV-A302RD BV-A303RD BV-C301RD BV-C305RD BV-C305RE BV-C302RD BV-C303RD BV-A304RD BV-C304RD BV-A306RD BV-A30DRD BV-M301RD BV-M305RD BV-M305RE

BV-A301RD

Abstract: BV-A302RD BV-A303RD BV-A304RD BV-A305RD BV-A305RE BV-A306RD BV-A30DRD BV-M301RD BV-M305RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.30" Five-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-A301RD BV-A305RD BV-A305RE BV-A302RD BV-A303RD BV-C301RD BV-C305RD BV-C305RE BV-C302RD BV-C303RD BV-A304RD BV-C304RD BV-A306RD BV-A30DRD BV-M301RD

BV-M541RD

Abstract: BV-M542RD BV-M543RD BV-M544RD BV-M545RD BV-M545RE BV-M546RD BV-M54DRD BV-M321RD BV-M325RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.56" Five-Digit 0.36" Six-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-M541RD BV-M545RD BV-M545RE BV-M542RD BV-M543RD BV-N541RD BV-N545RD BV-N545RE BV-N542RD BV-N543RD BV-M544RD BV-N544RD BV-M546RD BV-M54DRD

bv 748

Abstract: BV-M541RD BV-M542RD BV-M543RD BV-M544RD BV-M545RD BV-M545RE BV-M546RD BV-M54DRD BV-M321RD
Contextual Info: Part No. Digit Size 0.56" Five-Digit 0.36" Six-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-M541RD BV-M545RD BV-M545RE BV-M542RD BV-M543RD BV-N541RD BV-N545RD BV-N545RE BV-N542RD BV-N543RD BV-M544RD BV-N544RD BV-M546RD BV-M54DRD BV-M321RD

Contextual Info: BV 8, BV 12, BV 16 ,3 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A Reverse Voltage: 8000 to 16000 V Features                    !"#$ Mechanical Data      %&  ' 

VD-03

Abstract: BV-A501RD BV-A502RD BV-A503RD BV-A504RD BV-A505RD BV-A505RE BV-A506RD BV-A50DRD BV-M501RD
Contextual Info: Part No. Digit Size 0.50" Five-Digit Absolute Maximum Ratings Electro-optical Data At 10mA Drawing Peak Vf Iv. Typ. No. Wave (v) Pd If Ifp Per.Seg. Length (nm) (mw) (mA) (mA) (mcd) Typ. Max. p(nm) Chip Common Anode Common Cathode BV-A501RD BV-A505RD BV-A505RE

Contextual Info: BV 4, BV 6 -2 Axial lead diode High voltage silicon rectifier diodes BV 4, BV 6 Forward Current: 0,1 A Reverse Voltage: 4000 to 6000 V Features                   !"# Mechanical Data     $%#&' $%#! 

bv 748

Abstract: BV-A501RD BV-A502RD BV-A503RD BV-A504RD BV-A505RD BV-A505RE BV-A506RD BV-A50DRD BV-M501RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.50" Five-Digit Absolute Maximum Ratings Electro-optical Data At 10mA Drawing Peak Vf Iv. Typ. No. Wave (v) Pd If Ifp Per.Seg. Length (nm) (mw) (mA) (mA) (mcd) Typ. Max. p(nm) Chip Common Anode Common Cathode BV-A501RD BV-A505RD

MK06U-8-BV 282

Abstract: OZ 960 kv 2185 Hypertronics l series K/MK06U-8-BV 282 AE161
Contextual Info: L SERIES FRAMES FRAMES A, B and BV H Guides and Jack Screw Available Frame B Frame A Frame BV Simple Rack and Panel with Guides Simple Rack and Panel Rack and Panel with Guides & Jackscrew Plug .472 12.00 Plug .295 (7.50) .433 (11.00) .295 (7.50) Plug 3.906

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

BFR39

Abstract: bfr40 BFR80 BFR81 BFR79 BFR41 NPN pnp MATCHED PAIRS BFR61 Bfr60 transistor BFR40
Contextual Info: Silect General P u rp ose T ra n sisto rs — Ic up to 800 m A C a se O u tlin e s Polarity PTOT Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) T IS90 (1) TIS91 (1) Maximum ratings BV BV C BO V CEO V Cont IC A

transistor 115

Abstract: MOC205 MOC207 M0C207 M206 MOC206 RS481A MOC205 motorola
Contextual Info: Order this data sheet bv MOC205/D MOTOROLA m TECHNICAL DATA MOC205 MOC206 MOC207,$!. ‘%1, ,.!. >>. . Small Outline Optoisolators Transistoroutput These devices consist to a monolithic plastic silicon package. They of a gallium phototransistor are ideally

BV-N542RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N542RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N542RF SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-N546RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N546RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-M305RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-M305RD SINCE 1981 ● Features : 1. 0.30 inch 7.80mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-N544RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N544RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-M505RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-M505RD SINCE 1981 ● Features : 1. 0.50 inch 12.70mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-M544RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-M544RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

SHT01

Abstract: Q14F250D burndy y8mrb 187X020 burndy
Contextual Info: REV. DATE . BV DESCRIPTION C'K'D. / / in L - FIG. BURNDY CATALOG NO. Q18F187D Q18F250D Q14F187D Q14F250D Q 1 0F250D Q18M25OD Q14M187D Q14M250D Q10M250D 1 ACCOMMODATES WIRE TAB SIZE RANGE 22-16 22-16 16-14 16-14 12-10 22-16 16-14 16-14 12-10 .187x.020 .250X.032

pj 84 diode

Abstract: diode pj SSF8N80A GST-E-F pj 82 diode
Contextual Info: SSF8N80A Advanced Power MOSFET FEATURES BV dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS= 800V

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N313RD SINCE 1981 1. 0.30 inch 7.60mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity. 7. Multiplex drive common cathode.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N314RD SINCE 1981 1. 0.30 inch 7.60mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity. 7. Multiplex drive common cathode.

300C

Abstract: MHW1134 MHW1184 MHW1224 MHW1244 L1005
Contextual Info: MOTOROLA SEMICONDUCTOR o Order this document bv MHWl134/D TECHNICAL DATA The RF Line . MHW1134 . Low Distortion Wideband Amplifiers r . . . designed specifically for broadband apphcations requiring low distortion characteristi~. Specified for use as return amplifiers for mid+plit and high-split