BUZ71A S Search Results

BUZ71A

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE BUZ71A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ71A

Abstract: BUZ71AFI
Contextual Info: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

buz71

Abstract: BUZ71A
Contextual Info: BUZ71, BUZ71A f T S B c o n ix in c o r p o r a te d N-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) •d (V) (n ) (A) BUZ71 50 0.10 14 BUZ71A 50 0.12 13 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

BUZ71A

Abstract: BUZ71AFI
Contextual Info: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: ¿57 TYP E S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V BUZ71A BUZ71AFI BUZ71A b u z 7 1 AFI dss 50 V 50 V R D S o n < 0.12 < 0.12 a a Id 16 A 11 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY

BUZ71A

Abstract: TB334
Contextual Info: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES •DSIon) 0.12 OHMS 60 VOLTS

BUZ71

Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Contextual Info: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

Contextual Info: BUZ71A S em iconductor Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

buz71a

Contextual Info: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

ta9770

Abstract: transistor buz71a BUZ71A TB334 cip soa rl
Contextual Info: BUZ71A Semiconductor June 1999 Data Sheet 13A, 50 V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V T his is an N -C hannel e n h a n ce m e n t m ode silicon ga te pow er field effect tra n sisto r de sig n e d for ap plicatio ns such as

552 MOSFET TRANSISTOR motorola

Abstract: 552 transistor motorola Z71A
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL

mtp25n06

Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10

BUZ171 circuit

Abstract: varistor 10k 391 1045 pin out data BUZ17 GE V24ZA50 transistor buz71a 24V relay buz171 BUZ171 equivalent CD4016 equivalent
Contextual Info: LTC1045 Programmable Micropower Hex Translator/ Receiver/Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Efficiently Translate Voltage Levels Internal Hysteresis for Noise Immunity Output Latches Included Three-State Outputs Programmable Power/Speed

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

BUZ10A

Abstract: ISOWATT-220 TO-220 MOS MTP15N05L MTP3055A SGSP382 SGSP222 BUZ10 SGSP492 sgsp482
Contextual Info: SCS‘THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS SOT 82 TO 3 TO 240 ISOTOP : STANDARD VERSION Internal schematic diagrams ISOTOP: FASTON VERSION Without final «V» in the sales type D o D G O- Ò S POWER MOS HIMOS (IGBT) V(BR) DSS RDS(on) max (V) (0)

BUZ171 application note

Abstract: "Bar-Graph Display" Driver 16 DIP transistor buz71a BUZ171 BUZ171 circuit varistor 10007 Varistor 391 10k LTC1045 LTC1045CJ LTC1045CN
Contextual Info: LTC1045 Programmable Micropower Hex Translator/ Receiver/Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Efficiently Translate Voltage Levels Internal Hysteresis for Noise Immunity Output Latches Included Three-State Outputs Programmable Power/Speed

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

SMP16P06

Abstract: SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06
Contextual Info: CXSiliconix in c o r p o r a te d Selector Guide Plastic Packages N-Channel Cont’d N-Channel V(BÇDSS (A) Part Number >d s ( o n ) (Û ) V(BRJDSS r D S(O N ) Id (A) ( il) Part Number 650 5.8 1.5 VNT008D1 50 30 0.040 650 5.0 2.0 VNT009D1 50 25 0.060 BUZ11A1