BUZ 78 Search Results

Contextual Info: ^zml-Gonauctoi iJ^toauati, line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ 50 B N channel Enhancement mode Pin1 Pin 2 Pin 3 D Type Vbs ID ^DS(on) Package BUZ 50 B 1000V 2A 8Q TO-220 AB

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C

25B22

Contextual Info: BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 50 B 1000 V 2A 8Ω TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

C67078-S3109-A2

Abstract: 80J-10
Contextual Info: BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 308 800 V 2.6 A 4Ω TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ310

Abstract: C67078-A3101-A2
Contextual Info: BUZ 310 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 310 1000 V 2.5 A 5Ω TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

transistor buz 311

Abstract: BUZ 311 C67078-A3102-A2
Contextual Info: BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 311 1000 V 2.5 A 5Ω TO-218 AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

transistor vds rds 12 id 80a to220

Abstract: BUZ 80A A1309 BUZ 840 C67078-A1309-A3
Contextual Info: BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80A 800 V 3A 3Ω TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

BUZ90

Abstract: BUZ90A C67078-S1321-A3
Contextual Info: Not for new designs BUZ 90 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 90 A 600 V 4A 2Ω TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol

BUZ90

Abstract: C67078-S1321-A2
Contextual Info: Not for new designs BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 90 600 V 4.5 A 1.6 Ω TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol

A1307

Abstract: tp-730
Contextual Info: BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 50 C 1000 V 2.3 A 6Ω TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

diode 14512 H

Abstract: buz23 IC 14511
Contextual Info: aaD D • as35bQ5 88D qgihsio 14510 D a hsieg 1 ~ ' 3 * ? '/ / BUZ 23 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case K>8 h ^OS on = 100 V - 10 A

L388D

Contextual Info: ÛÔD D • ô235bOS 0Q14SSÔ 3 « S I E i S ‘ 88D 14558 D '7~~ t BUZ 35 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance Description C ase l'os h ^DS on

RCM-601

Abstract: m781 surge protector Okaya AC560V EN60099-1 m 781 RCM601 AC560 BUZ45 surge protector
Contextual Info: R 'C ‘ M-BQZ-4,5, -BUZ-4 ,5 SERIES Features cTO us • Line to Line and Line to Ground combined protection. • UL, CS A and CE safety approvals. • Surge protection for both Single and Three Phase applications. • Compact size. SURGE PROTECTOR 4 OKAYA M

W80S

Abstract: DIODE G14
Contextual Info: ÖÖD D • Û235b05 0014514 ? « S I E G 88D 14594 D ~ f BUZ 44 A - SIEMENS AKTIEN6ESELLSCHAF -Main ratings N-Channel = 500 V Draln-source voltage Voa =. 4,8 A Continuous drain current h Draln-source on-reslstance ^D S o n » 1,5 n Description

iec 61800-5-1

Contextual Info: Data sheet. BU/SU 10.16 series BUZ 10.16IT/03/180MF3 AG BK BX Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-2083 www.weidmueller.com 180° socket block in 10.16 pitch for IT systems. Fulfils the

Contextual Info: fiäD D • ñ53SbQS ooi4ss2 5 « s i e g 88D 14552 BUZ 34 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage y03 = 200 V Contlnuous drain current ID a 14 A Draln-source on-reslstance f l 0s on s 0,2 H Description Case SIPMOS, N-channel, enhancement mode

buz 90 af

Contextual Info: fiflD » • 88D ê23SbQ5 0014604 3 ■ S I E Û _ 14804 D T “ 3 eì-/1 _ BUZ 83 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel » 800 V Draln-source voltage Its = 2,9 A Continuous drain current Jo Draln-source on-resistance ^DS on = 4,0 n Description

Contextual Info: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D T - 3 W "/ I BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel Vaa a 800 V Drain-source voltage Continuous drain current /„ = 2 ,9 A Drain-source on-resistance ^DS on 4,5 £2 Description Case

DIN 14574

Contextual Info: ÔÔD ÔSBSbOS Q 0 m S 7 Q 4 * S I E G D 880 14570 D BUZ 37 SIEMENS AKTIEN6ESELLSCHAF Main ratings N-Channel = 200 V Draln-source voltage K>s Continuous drain current = 13 A h Draln-source on-resistance ^DS on a 0,2 n Description SIPMOS, N-channel, enhancement mode

Contextual Info: öflD D • ÛEBSbDS 88D OOLMMÖb 4 « S I E G 14486 . D 7 ' 3 ^ - / 3 BUZ 17 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel 50V 32 A 0,04 Draln-source voltage Voa Continuous drain current h Draln-source on-reslstance ^DS on Description Case a SIPMOS, N-channel, enhancement mode

Contextual Info: ÜÖD D • 88D û23StiQS QQISQbô 2 H S I E â 15068 D BUZ 360 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Draln-source voltage K>s Continuous drain current ii Draln-source on-reslstance ^DS on 800 V 3,6 A 3,0 Si Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode

Contextual Info: 3 7E SEMELAB LTD D 0133107 0D00257 b • s iilb ' Æ ]L/ SEMELAB *BUZ 46 ’ MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SMPS • ARC WELDING • D.C. MOTOR CONTROL PIN 1-G a te PIN 2 -S o u rc e C A S E -D rain

Contextual Info: SENELAB LT» 37E D 0133107 DDOOSbS S • SMLB ' SE1V9ELAB • * 5 y V ‘ > BUZ 63 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm -M I * - 1 .6 39.5 1 1 APPLICATIONS i • MOTOR CONTROL 20.3 16.9 i -H • SMPS 9.0 12.0 PIN 1 -G a te

BUZ23

Contextual Info: 37E SEMELAB LTD DEC 3 y D Ö1331Ö7 0GGD2M3 SEMELAB BUZ 23 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm -M fl-1.6 1 i 39.5 20.3 APPLICATIONS • DC/DC CONVERTERS • MOTOR DRIVERS • HI-FI OUTPUT STAGES 9.0 12.0 PIN 1 -G a te PIN 2 -S o u rc e