BUZ 11 A Search Results

cc 3025 diode

Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
Contextual Info: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated

Contextual Info: 37E D SENELAB LTD Ö1331Ö? 0 0 0 0 2 7 3 T-39-11 SEMELAB ¡qoo £ 0 / >S//¿ g BUZ 74 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm _10.3_ mux. A .5 m o x 1.3 -W 3.6H- J L . 2. 8 5.9 TÏ mi n. APPLICATIONS 5.1 15.8 X mÌQ ax. L J .J

transistor buz 36

Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A

BUZ MOSFET

Contextual Info: bOE D 3133107 SEMELAB PLC G0GDS42 2G3 • SMLB - " T S f l - Z 5 r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING

S3C7281

Abstract: 32-SOP-450A
Contextual Info: S3C7281 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7281 is a SAM48 core-based 4-bit CMOS single-chip microcontroller. It is built around the SAM48 core CPU and contains ROM, RAM. 14 I/O lines, buzzer and inverted buzzer output, and LCD driver/controller with an

Contextual Info: BUZ 102SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS on Package Ordering Code BUZ 102SL-4 55 V 6.2 A 0.033 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings

Contextual Info: BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 171 -50 V -8 A 0.3 Ω TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current

transistor buz 36

Abstract: BUZ 81 KS57C21632 KS57P21632 SAM47
Contextual Info: KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the KS57C21632 offers an

Contextual Info: HOLTEK r r HT7606 Low Power PIR Controller Features • • • • • • • • Low stand-by current: 30|lA Max. O perating voltage: 4.5V~12V 24 DIP/SOP or 28 DIP/SOP B uilt-in am plifiers and com parators An LED trigger indicator Relay driver output

Contextual Info: BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 93 600 V 3.6 A 2.5 Ω TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ30AH

Abstract: BUZ30a
Contextual Info: BUZ 30A H SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS on Package Pb-free BUZ 30A H 200 V 21 A 0.13 Ω PG-TO-220-3 Yes S Maximum Ratings

Contextual Info: BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: flflD D • Ô535b05 D01S03Ô 4 H S I E â SIEMENS AKTIENGESELLSCHAF 3^*/3 Main ratings BUZ 354 N-Channel = 500 V Draln-source voltage l^is = 8A Continuous drain current /d Drain-source on-resistance ^D S on = 0,8 a Description Case SIPMOS, N-channel, enhancement mode

Contextual Info: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

Contextual Info: ôfiD D • 88D fl235bG5 0014^54 0 « S I E Û 14954 D BUZ 231 7 ~ '3 * 7 ~ /3 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance a 1000 V l^ S = 4,9 A k ^OS on) = 2,6 n Go- Description

z58 diode

Contextual Info: fcTT &3D D • ÖS3Sfc.GS OGlMbVa 2 M S I E G 88D 14678 — D BUZ 58 SIEMENS AK TI EN 6E SE LLSCH AF- Main ratings N-Channel = 1000 V Draln-source voltage ^DS = 4,2 A Continuous drain current h Draln-source on-resistance ^DS on = 2,0 n Description SIPMOS, N-channel, enhancement mode

transistor c4204

Abstract: C4204 P4304 C4304 BUZ 325 KS57C4104 KS57C4204 KS57C4304 SAM47 p4204
Contextual Info: KS57C4104/P4104/C4204/P4204/C4304/P4304 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C4104/KS57C4204/KS57C4304 single-chip CMOS microcontroller has been designed for very high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontroller .

55A400

Abstract: BUZ60
Contextual Info: Standard Power MOSFETs File Number BUZ 60 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5 .5 A , 4 0 0 V N-CHANNEL ENHANCEMENT MODE fDSioni - 1 .0 f î Features: • SOA is pow er-dissipation lim ite d ■ N anosecond sw itching speeds ■ Linear transfer characteristics

Contextual Info: 三合微科股份有限公司 SAMHOP Microelectronics Corp. SM3015 REMOTE FAN MCU REV. 4.00 DECEMBER 21, 2005 The information in this document is subject to change without notice. c SAMHOP Microelectronics Corp. All Rights Reserved. 台北縣新店市民權路100號7樓

uPD78054GC

Contextual Info: UPD78054GC 1/4 IL08D C-MOS 8-BIT MICROCOMPUTER 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 —TOP VIEW— VDD GND AGND A VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 40

HT7606

Abstract: circuit diagram of automatic door bell voltage regulator using triac PIR with CDS DC PIR CONTROLLER 8 reset act fosca 2-digit door bell counter working pir chip R1FH AUTOMATIC ROOM LIGHT CONTROLLER using pir
Contextual Info: HT7606 Low Power PIR Controller Features • • • • • • • • Low stand-by current: 30µA Max. Operating voltage: 4.5V~12V 24 DIP/SOP or 28 DIP/SOP Built-in amplifiers and comparators An LED trigger indicator Relay driver output TRIAC driver output

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

S3C7574

Abstract: S3P7574 SAM47 P7574
Contextual Info: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set S3C7574/P7574 Preliminary Spec 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7574 single-chip CMOS microcontroller has been designed for high performance using Samsung's