BUZ 100 MOSFET Search Results

buz 90 af

Abstract: TL 2262 IC 2262 AF BUZ 72 A 2262 af tl 2262 am BUZ72
Contextual Info: Standard Power MOSFETs BUZ 72 A File N u m b e r 2262 N-Channel Enhancement-Mode Power Field-Effect Transistors 9 A, 100 V TDSIon = 0.25 D. N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ited a N anosecond s w itching speeds m Linear transfer characteristics

buz10

Contextual Info: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ11

Abstract: buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220
Contextual Info: BUZ11  N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET T YPE BUZ 11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

BUZ10

Abstract: buz10 equivalent stmicroelectronics datecode
Contextual Info: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

Contextual Info: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,

BUZ MOSFET

Contextual Info: bDE D I 5133107 000D530 ST 1 • S M L B SEMELAB PLC prpr M A G N A r^ t e c BUZ 9 0 0 BUZ 901 NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FO R USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING

Contextual Info: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES

Contextual Info: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •

Contextual Info: bOE ]> • SEHELAB 0133107 □□□G53‘ì 711 ■SMLB PLC r r rT ' - ' 3 ^ ' Z 3 M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES

Contextual Info: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics

49nF

Contextual Info: Standard Power MOSFETs BUZ 351 File No. 2266 N-Channel Enhancement-Mode Power Field-Effect Transistors 11.5 A, 400 V rDS<on = 0.4 fi N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics

BUZ 349 mosfets

Contextual Info: Standard Power MOSFETs BUZ 76 A File No. 2265 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.6 A, 400 V •"D SIonl = 2.5 £1 N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond s w itching speeds m Linear transfer characteristics

BUZ 338

Contextual Info: Standard Power MOSFETs BUZ 73 A File Number 2263 N-Channel Enhancement-Mode Power Field-Effect Transistors 5.8 A, 200 V TDSIoni = 0.6 O N-CHANNEL ENHANCEMENT MODE D Features: • SOA is p ow er-dissipation lim ited m N anosecond s w itching speeds m Linear transfer characteristics

BUZ45A

Abstract: BUZ45 transistor 6.z transistor 125W
Contextual Info: Standard Power MOSFETs File Number BUZ 45 A 2258 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.3 A, 500 V N-CHANNEL ENHANCEMENT MODE rDsioni = 0 .8 O Features: • SOA is power-diss/pation lim ited m N anosecond sw itching speeds a Linear transfer characteristics

55A400

Abstract: BUZ60
Contextual Info: Standard Power MOSFETs File Number BUZ 60 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5 .5 A , 4 0 0 V N-CHANNEL ENHANCEMENT MODE fDSioni - 1 .0 f î Features: • SOA is pow er-dissipation lim ite d ■ N anosecond sw itching speeds ■ Linear transfer characteristics

transistor buz 311

Abstract: BUZ41 BUZ 41 A diagram
Contextual Info: Standard Power MOSFETs BUZ 41 A File N u m b e r 2256 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 4.5 A, 500 V rDS on = 1.5 O Features: • SOA is p ow er-dissipation lim ite d • N anosecond s w itching speeds m Linear transfer characteristics

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

BUZ20

Contextual Info: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics

BUZ45

Contextual Info: Standard Power MOSFETs File No. 2257 BUZ 45 N-Channel Enhancement-Mode Power Field-Effect Transistors 9.6 A, 500 V N -CH A N N EL E N H A N C EM EN T M ODE rosioni = 0 .6 O Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds

92CS-39526

Contextual Info: Standard Power MOSFETs B U Z 60B File N um b er 2261 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.5 A, 400 V Tostonl = 1.5 Q N-CHANNEL ENHANCEMENT MODE Features: • SOA is pow er-dissipation lim ite d m N anosecond sw itching speeds m Linear transfer characteristics

Dual N- AND P-Channel Power FET TO-220 PACKAGE

Abstract: 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220
Contextual Info: Power semiconductors Higher cell density, more rugged design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutationproof and more resistant to avalanche breakdowns. At the same time, their specific drain-source on

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

of mosfet BUZ 384

Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
Contextual Info: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range