BUP TRANSISTOR Search Results

SIEMENS 1200

Abstract: siemens dioden bup203 C67078-A4400-A2
Contextual Info: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2

bup transistor

Abstract: siemens igbt ge 739 C67078-A4401-A2 BUP 202
Contextual Info: SIEMENS IGBT Transistors BUP 202 BUP 302 • N channel • MOS input voltage-controlled • Low forward voltage drop • High switching speed • Very low tail current • Low temperature sensitivity • Avalanche-rated • Latch-up-free • Suitable free wheeling diode

bup300

Abstract: BUP200 200-BUP bup 200 transistor
Contextual Info: SIEMENS IGBT Transistors • • • • • • • • • BUP 200 BUP 300 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode

BUP 307

Abstract: transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor
Contextual Info: SIEMENS BUP 304 BUP 307 IGBT High Power Switch VCE = 1000 V /1 2 0 0 V = 25 A lc • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity

7060a

Abstract: TOP3 package bup transistor
Contextual Info: S IE M E N S BUP 101 SIRET Siemens Ring Emitter Transistor VCE = 1000 V lc =15 A • • • N channel B rea kdo w n-p roo f Package: TO-218 AA TOP-3 ') Type Ordering code BUP 101 C 6 7060-A 1000-A 2 Maximum Ratings at T{ = 25 °C, unless otherw ise specified.

BUP142

Abstract: Shenzhen SI Semiconductors
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP142 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION: ■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA

BUP162

Abstract: 060-C1
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP162 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION：■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA

NPN Transistor 50A 400V

Abstract: NPN 400V 40A BUP51 BUP52 bup transistor l82a BUP53 BUp54 LE17 400v 50A Transistor
Contextual Info: SEMELAB BUP 53 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Designed for high energy applications requiring robust fast switching devices D im ensions in m m FEATURES • LOW VCE s>t • FAST SWITCHING • SINGLE CHIP CONSTRUCTION • HIGH SWITCHING CURRENTS

LS303

Abstract: BUP 303 bup203
Contextual Info: SIEMENS IGBT Transistors N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode BYP 101 G E Type ^CE BUP 203 1000 V

TRANSISTOR JC

Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
Contextual Info: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode

bup transistor

Abstract: bup 200 transistor
Contextual Info: SIEMENS BUP 200 IGBT High Power Switch Preliminary Data VCE = 1200 V /c = 1.5 A • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity

7078a

Abstract: bup 200 transistor
Contextual Info: SIEMENS IGBT High Power Switch BUP 202 Preliminary Data vCE = 1000 v lc = 8 A • • • • • • • • • N channel MOS in pu t (volta ge -controlle d) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity

IGBT. CM50TF-12H

Abstract: CM50TF-12H
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

Contextual Info: # w m s CM30TF-12H r Powerex, Inc., 200Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S¡X~IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts BuP EuP BvP EvP BwP EwP 50 4 0 ^ 0 4 r -1 S - DIA— (2 TYP.) BuN EuN i - i B w N E vN r-i — K— — H-

BUN DIODE

Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Contextual Info: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

600v 30a IGBT

Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Contextual Info: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K

CM50TF-12H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

600v 30a IGBT

Abstract: CM30TF-24H IGBT 1200V 60A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

BUN DIODE

Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
Contextual Info: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

CM30TF-24H

Abstract: igbt 600V 30A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

BUN DIODE

Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Contextual Info: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R

BUN DIODE

Contextual Info: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module

buz 342 G

Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m