Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BUP 311D Search Results

    BUP 311D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    U90A1311D0A
    Amphenol Communications Solutions ExpressPort QSFP+, High Speed Input Output Connectors, CAGE ASSEMBLY. PDF
    133-311D-11D
    Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 10 Column, Direct Orthogonal, Double End Wall, 1.5mm Wipe, Nickel Sulfamate. PDF
    133-311D-21H
    Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 10 Column, Direct Orthogonal, Double End Wall, 2.25mm Wipe, APP. PDF
    133-311D-11H
    Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 10 Column, Direct Orthogonal, Double End Wall, 1.5mm Wipe, APP. PDF
    133-311D-12H
    Amphenol Communications Solutions Paladin Plus 3-Pair, 10 Column, Direct Orthogonal Header, Double End Wall, 1.5mm Wipe, APP PDF

    BUP 311D Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUP311D
    Infineon Technologies 12A 1200V TO218AB IGBT + Diode Original PDF 80.14KB 9
    BUP311D
    Infineon Technologies IGBT Chip, 1200V, TO-218AB, 3-Pin Original PDF 70.83KB 9
    SF Impression Pixel

    BUP 311D Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BUP311D

    IGBT Transistors; INFINEON; BUP311D; 1.2 kV; Single; 20 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Maritex BUP311D 1,000 1
    • 1 $6.08
    • 10 $6.08
    • 100 $6.08
    • 1000 $6.08
    • 10000 $6.08
    Buy Now

    BUP 311D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    311D

    Abstract: bup 311d
    Contextual Info: BUP 311D Infineon IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A


    Original
    O-218 C67078-A4102 May-06-1999 311D bup 311d PDF

    bup 311d

    Abstract: 311d BUP311D May-06-1999
    Contextual Info: BUP 311D IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A Pin 1


    Original
    O-218 May-06-1999 bup 311d 311d BUP311D May-06-1999 PDF

    bup 311d

    Abstract: bup212 igbt to220 311D SIGC16T120C
    Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212


    Original
    SIGC16T120C Q67041-A4673A003 7131-M, bup 311d bup212 igbt to220 311D SIGC16T120C PDF

    TO220 package infineon

    Abstract: 311D SIGC16T120C BUP311D bup 311d
    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:


    Original
    SIGC16T120C Q67041-A4673A003 7131-M, TO220 package infineon 311D SIGC16T120C BUP311D bup 311d PDF

    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  short circuit prove  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 311D /BUP 212 C Applications:  drives G Chip Type VCE


    Original
    SIGC16T120C L7131MM, PDF

    bup212

    Abstract: SIGC16T120C BUP 200 application
    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  short circuit prove  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 311D /BUP 212 C Applications:  drives G Chip Type VCE


    Original
    SIGC16T120C L7131MM, bup212 SIGC16T120C BUP 200 application PDF

    311D

    Abstract: A003 SIGC16T120C bup212
    Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212


    Original
    SIGC16T120C Q67041-A4673sawn 7131-M, 311D A003 SIGC16T120C bup212 PDF

    Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:


    Original
    SIGC16T120C Q67041-A4673A003 7131-M, PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original
    2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF