BUP 200 APPLICATION Search Results

TO220 package infineon

Abstract: 311D SIGC16T120C BUP311D bup 311d
Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:

Contextual Info: SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212 G Applications:

bup 311d

Abstract: bup212 igbt to220 311D SIGC16T120C
Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212

311D

Abstract: A003 SIGC16T120C bup212
Contextual Info: Preliminary SIGC16T120C IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120C 1200V This chip is used for: • BUP 311D /BUP 212

BUP213

Abstract: A001 SIGC25T120C
Contextual Info: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V

BUP 314

Abstract: SIGC42T120C
Contextual Info: SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications: • drives

BUP314

Abstract: bup 314 SIGC42T120C SIGC42T120CL 7151
Contextual Info: Preliminary SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CL VCE This chip is used for: • BUP 314 C Applications:

7151

Abstract: bup 314 BUP314
Contextual Info: SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications: • drives

BUP213

Abstract: SIGC25T120C SIGC25T120CL 280-400 BUP21
Contextual Info: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120CL VCE ICn 1200V

Contextual Info: SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications: • drives

bup 314

Abstract: SIGC42T120C
Contextual Info: Preliminary SIGC42T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling Chip Type SIGC42T120C VCE This chip is used for: • BUP 314 C Applications:

BUP213

Abstract: SIGC25T120C
Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

bup213

Abstract: BUP21
Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

BUN DIODE

Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Contextual Info: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

600v 30a IGBT

Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Contextual Info: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K

BUN DIODE

Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
Contextual Info: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E

BUN DIODE

Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Contextual Info: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R

BUN DIODE

Contextual Info: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module

thyristor Q 720 To220

Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic

BUP314

Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for

BUP64

Abstract: BUP65
Contextual Info: 37E SEMELAB LTD D • B1331B7 000023E SEMELAB dec 3 i 198/ ^ BUP64 7 ' ^ 0 7 /tfOQ kUf BUP65 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS PIN 1 -G a te P IN 2-S o u rc e

125 kHz RFID amplification

Abstract: psk demodulation ISO13506 ISO14443 LQFP48 T6N71B si1464
Contextual Info: T6N71B TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic T6N71B RFID Radio Frequency tag Reader and Writer Interface LSI Features • RFID reader and writer interface LSI embedding analog and data processing · Receive signal demodulation circuit stabilized by a built-in

Contextual Info: T6N71 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic T6N71 RFID Radio Frequency tag Reader and Writer Interface LSI Features • RFID reader and writer interface LSI embedding analog and data processing • Receive signal demodulation circuit stabilized by a built-in