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BUK9608-55
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Philips Semiconductors
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TrenchMOS Transistor Logic Level FET |
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PDF
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53.7KB |
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BUK9608-55
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Toshiba
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Power MOSFETs Cross Reference Guide |
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PDF
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165.78KB |
67 |
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BUK9608-55,118
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Philips Semiconductors
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 75A D2PAK |
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PDF
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8 |
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BUK9608-55A
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Philips Semiconductors
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TrenchMOS Logic Level FET |
Original |
PDF
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124.65KB |
14 |
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BUK9608-55A
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Philips Semiconductors
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TrenchMOS transistor Logic level FET |
Original |
PDF
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76.27KB |
9 |
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BUK9608-55A,118
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 43 nC; RDS(on): 7.5@10V8@5V8.5@4.5V mOhm; Thermal Resistance: 0.59 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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PDF
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124.64KB |
14 |
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BUK9608-55A/C,118
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NXP Semiconductors
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BUK9608-55A/C - N-channel TrenchMOS logic level FET, SOT404 Package, Standard Marking, Reel Pack, SMD, 13" |
Original |
PDF
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205.85KB |
14 |
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BUK9608-55A/T3
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NXP Semiconductors
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TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 43 nC; RDS(on): 7.5@10V8@5V8.5@4.5V mOhm; Thermal Resistance: 0.59 K/W; VDSmax: 55 V |
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PDF
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124.64KB |
14 |
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BUK9608-55B
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NXP Semiconductors
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BUK9608-55B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V |
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PDF
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161.33KB |
14 |
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BUK9608-55B
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Philips Semiconductors
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Trenchmos logic level FET |
Original |
PDF
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115.15KB |
16 |
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BUK9608-55B,118
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NXP Semiconductors
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BUK9608-55 - TRANSISTOR 75 A, 55 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
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PDF
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180.93KB |
14 |
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BUK9608-55B,118
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NXP Semiconductors
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Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
Original |
PDF
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115.13KB |
16 |
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BUK9608-55B/T3
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NXP Semiconductors
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Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V |
Original |
PDF
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115.13KB |
16 |
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BUK9608-55/T3
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NXP Semiconductors
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TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 40 nC; RDS(on): 8@5V mOhm; Thermal Resistance: 0.8 K/W; VDSmax: 55 V |
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PDF
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53.68KB |
8 |
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BUK960855T3
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Philips Semiconductors
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TrenchMOS transistor Logic level FET |
Original |
PDF
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53.69KB |
8 |
