| BUK92150-55A |
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NXP Semiconductors
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BUK92150-55A - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 11 A; Qgd (typ): 2.6 nC; RDS(on): 137@10V150@5V161@4.5V mOhm; Thermal Resistance: 4.1 K/W; VDSmax: 55 V |
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PDF
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173.46KB |
14 |
| BUK92150-55A |
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Philips Semiconductors
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TrenchMOS Logic Level FET |
Original |
PDF
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89.88KB |
13 |
| BUK92150-55A |
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Philips Semiconductors
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TrenchMOS transistor Logic level FET |
Original |
PDF
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64.21KB |
8 |
| BUK92150-55A,118 |
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NXP Semiconductors
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BUK92150-55 - TRANSISTOR 11 A, 55 V, 0.155 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, TO-252, SC-63, DPAK-3, FET General Purpose Power |
Original |
PDF
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173.47KB |
14 |
| BUK92150-55A,118 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 11 A; Qgd (typ): 2.6 nC; RDS(on): 137@10V150@5V161@4.5V mOhm; Thermal Resistance: 4.1 K/W; VDSmax: 55 V; Package: SOT428 (DPAK); Container: Tape reel smd |
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PDF
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89.86KB |
13 |
| BUK92150-55A/CDJ |
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Nexperia USA
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TRANS DPAK |
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PDF
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661.11KB |
13 |
| BUK92150-55A/T3 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 11 A; Qgd (typ): 2.6 nC; RDS(on): 137@10V150@5V161@4.5V mOhm; Thermal Resistance: 4.1 K/W; VDSmax: 55 V |
Original |
PDF
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89.86KB |
13 |
