BUK759 Search Results
BUK759 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BUK7515-100AContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is |
Original |
O220AB BUK7515-100A BUK7515-100A | |
7518Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device |
Original |
OT404 BUK7618-30 7518 | |
|
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance |
Original |
O220AB BUK7510-30 | |
PHB37N06TContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device |
Original |
OT404 PHB37N06T PHB37N06T | |
PHB80N06TContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device |
Original |
OT404 PHB80N06T PHB80N06T | |
PHP50N06T
Abstract: A80L
|
Original |
O220AB PHP50N06T PHP50N06T A80L | |
|
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device |
Original |
OT404 BUK7624-55 | |
BUK7505-30AContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is |
Original |
O220AB BUK7505-30A BUK7505-30A | |
BUK7615-100A
Abstract: SC18
|
Original |
OT404 BUK7615-100A BUK7615-100A SC18 | |
transistor irfz44n
Abstract: irfz44n for irfz44n pin of IRFZ44N IRFZ44N equivalent of irfz44n datasheet of irfz44n
|
Original |
O220AB IRFZ44N transistor irfz44n irfz44n for irfz44n pin of IRFZ44N IRFZ44N equivalent of irfz44n datasheet of irfz44n | |
BUK7575-55
Abstract: buk7575
|
Original |
O220AB BUK7575-55 BUK7575-55 buk7575 | |
BUK7514-55Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance |
Original |
O220AB BUK7514-55 175ation BUK7514-55 | |
BUK7640-100AContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device |
Original |
OT404 BUK7640-100A BUK7640-100A | |
BUK7628-55Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device |
Original |
OT404 BUK7628-55 BUK7628-55 | |
|
|
|||
k 246 transistor fet
Abstract: BUK7675-55
|
Original |
OT404 BUK7675-55 k 246 transistor fet BUK7675-55 | |
BUK7508-55
Abstract: BUK7608-55
|
Original |
OT404 BUK7608-55 BUK7508-55 BUK7608-55 | |
BUK7618-55Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device |
Original |
OT404 BUK7618-55 BUK7618-55 | |
BUK7508-55
Abstract: PHB125N06T
|
Original |
OT404 PHB125N06T BUK7508-55 PHB125N06T | |
BUK7520-55Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance |
Original |
O220AB BUK7520-55 175ation BUK7520-55 | |
PHB50N03T
Abstract: PHP50N03T transistor on 974
|
Original |
OT404 PHB50N03T PHB50N03T PHP50N03T transistor on 974 | |
BUK7528-30
Abstract: PHP45N03T
|
Original |
O220AB PHP45N03T BUK7528-30 PHP45N03T | |
BUK7535-55Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance |
Original |
O220AB BUK7535-55 BUK7535-55 | |
transistor 7830
Abstract: BUK7830-30 PHT6N03T vdgr test circuit
|
Original |
OT223 PHT6N03T transistor 7830 BUK7830-30 PHT6N03T vdgr test circuit | |
BUK7506-30
Abstract: BUK7606-30 PHP18N20E
|
Original |
OT404 BUK7606-30 BUK7506-30 BUK7606-30 PHP18N20E | |