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    BUK759 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK7515-100A

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is


    Original     		o220abbuk7515-100a PDF

    7518

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		ot404buk7618-307518 PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abbuk7510-30 PDF

    PHB37N06T

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404phb37n06t PDF

    PHB80N06T

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404phb80n06t PDF

    PHP50N06T

    Abstract: A80L
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abphp50n06ta80l PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404buk7624-55 PDF

    BUK7505-30A

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is


    Original     		o220abbuk7505-30a PDF

    BUK7615-100A

    Abstract: SC18
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404buk7615-100asc18 PDF

    transistor irfz44n

    Abstract: irfz44n for irfz44n pin of IRFZ44N IRFZ44N equivalent of irfz44n datasheet of irfz44n
    Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abirfz44ntransistor irfz44nfor irfz44n+4pin of irfz44nirfz44n equivalentof irfz44ndatasheet of irfz44n PDF

    BUK7575-55

    Abstract: buk7575
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abbuk7575-55buk7575 PDF

    BUK7514-55

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abbuk7514-55175ation PDF

    BUK7640-100A

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404buk7640-100a PDF

    BUK7628-55

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404buk7628-55 PDF

    k 246 transistor fet

    Abstract: BUK7675-55
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404buk7675-55k 246 transistor fet PDF

    BUK7508-55

    Abstract: BUK7608-55
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404buk7608-55buk7508-55 PDF

    BUK7618-55

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404buk7618-55 PDF

    BUK7508-55

    Abstract: PHB125N06T
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    Original     		ot404phb125n06tbuk7508-55 PDF

    BUK7520-55

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abbuk7520-55175ation PDF

    PHB50N03T

    Abstract: PHP50N03T transistor on 974
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		ot404phb50n03tphp50n03ttransistor on 974 PDF

    BUK7528-30

    Abstract: PHP45N03T
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abphp45n03tbuk7528-30 PDF

    BUK7535-55

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		o220abbuk7535-55 PDF

    transistor 7830

    Abstract: BUK7830-30 PHT6N03T vdgr test circuit
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device


    Original     		ot223pht6n03ttransistor 7830buk7830-30+1vdgr test circuit PDF

    BUK7506-30

    Abstract: BUK7606-30 PHP18N20E
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		ot404buk7606-30buk7506-30php18n20e PDF