BUJ302A Search Results

Contextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits

Contextual Info: TO -2 20F BUJ302AX NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A TO-220F plastic package. 1.2 Features and benefits

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302A GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control

BUJ302AX

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: TO -22 0A B BUJ302A NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

BUJ302AD

Contextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits

BUJ302AX

Contextual Info: TO -2 20F BUJ302AX NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A TO-220F plastic package. 1.2 Features and benefits

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

BUJ302A

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

BUJ302A

Contextual Info: TO -22 0A B BUJ302A NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

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Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

PHE13007

Abstract: TRANSISTOR bt134 transistor BT137 bt151 BUJ100 SOT186A package PHE13009 transistor bt139 z0103mn0 triac
Contextual Info: Bipolar Power Product Selection Guide Efficient, Reliable and Green Thyristors 4-Quadrant Triacs SOT54 TO92 IT(RMS) (A) 0.6 0.8 1 4 6 8 12 16 20 25 VDRM (V) IGT (max) (mA) 400 600 400 / 600 400 / 600 600 600 600 / 800 600 / 800 600 / 800 600 / 800 600 / 800

fluorescent ballasts 36w

Abstract: philips electronic ballast 36W electronic ballast 18w cfl lamp philips cfl 18W FLUORESCENT LIGHTING Inverter halogen ballast 36W CFL current fed push pull topology philips electronic ballast 18W electronic ballast 36W
Contextual Info: FACT SHEET 045 Philips bipolar transistors for electronic lighting Introduction The Philips Technical Publication "Efficient Fluorescent Lighting using Electronic Ballasts" provides an introduction to fluorescent lamps and the circuits required to operate them with maximum life and

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and