BU 208 D Search Results

bu 2225

Abstract: BU208A BU 102
Contextual Info: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high

TRANSISTOR BC 208

Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
Contextual Info: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers

tfk u 208 u

Abstract: TFK U 111 B tfk bav 21 TFK U 111 B 45A BU208 tfk 138 TFK BU209 BU209 BU 208 tfk u 111
Contextual Info: 'W BU 207 •BU 208 •BU 209 Sifizium-NPN-Leistungstransistoren Silicon NPN Power Transistors Anwendung : Application: Horizontal-Ablenk-Endstufen in Farbfernsehempfängern Horizontal deflection circuits in colour TV-receivers Besondere Merkmale: • Hohe Sperrspannung

bu 1350

Abstract: BU 508 transistor power flyback bu508
Contextual Info: JJ-E M G CORP Û1 m DE|D[ gTMEb 7 | J - J 2 - Ó / Horizontal Deflection Transistors T E LEFU N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet) hermetic package and in the high voltage epoxy package. Our basic

TRANSISTOR BDX

Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208
Contextual Info: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

BU 450 bdx

Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A

TC14L080/AF

Abstract: TC14L050
Contextual Info: TOSHIBA TOSHIBA AM ERICA ELEC TR O NIC C O M P O N EN T S , IIMC TC11L CMOS Gate Array TC14L CMOS Gate Array 1.5 micron 1.0 micron These two gate array fam ilies provide a unique solution for designs which have a high ratio of pin count to gates. T o sh ib a ’s o p tim iz e d asse m b ly te c h n o lo g y allow s the use of

LQFP 208

Abstract: echo cancellation audio G.168 LQFP MT9123 MT93L04 ZL38065 ZL38070 ZL50211 ZL50212 ZL50232
Contextual Info: VOICE ECHO CANCELLATION PRODUCT OVERVIEW Zarlink portfolio of highly integrated VECs voice echo cancellers that optimize call quality in a wide range of low- to mid-density wireless and telephony equipment. Zarlink’s off-the-shelf VECs support from 2 to 288 voice

d-31675 bernstein

Abstract: D-31675 bernstein D- 31675 Bernstein MA80 circuit diagram D3167 d31675 bernstein temperature DATA TRANSISTOR MAGNETIC PROXIMITY SENSOR d-31675
Contextual Info: Technisches Datenblatt elektronischer Magnetgrenztaster der Baureihe MA – 80 Unternehmensbereich Sensortechnik Type: MEM–80OP2–01.2–2/K Art.–Nr.: 637.3280.057 01.06.99/2080 aktive Fläche Schaltpunkt [mT] Rückschaltpunkt [mT] Hysterese [mT] BOP

d-31675 bernstein

Abstract: D-31675 transistor 0882 bernstein bernstein D- 31675 0882 TRANSISTOR IEC 529 TRANSISTOR bH pnp DATA TRANSISTOR 31675
Contextual Info: Technisches Datenblatt elektronischer Magnetgrenztaster der Baureihe MA – 61 Unternehmensbereich Sensortechnik Type: MEM–61NP2–10.2–2/KL Schaltpunkt [mT] Rückschaltpunkt [mT] Hysterese [mT] – Süd (+) Nord BOP BRP BH min. +3,0 +1,0 2,0 Art.–Nr.: 637.1261.042

d-31675 bernstein

Abstract: D-31675 bernstein D- 31675 Bernstein d31675 TRANSISTOR bH pnp MAGNETIC PROXIMITY SENSOR d-31675 31675 D3167 MAGNETIC PROXIMITY SENSOR
Contextual Info: Technisches Datenblatt elektronischer Magnetgrenztaster der Baureihe MA – 61 Unternehmensbereich Sensortechnik Type: MEK–61NP1–10.2–2/KL Schaltpunkt [mT] Rückschaltpunkt [mT] Hysterese [mT] – Süd (+) Nord BOP BRP BH min. +3,0 +1,0 2,0 Art.–Nr.: 637.1161.040

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

2DI75D-050A

Abstract: ETN81-055 2DI150D-050 2DI200A-050 2DI240A-055 2DI100D-050 2DI300A-050 2DI30D-050A 2DI50D-050A 2DI50D-055A
Contextual Info: B IP O LA R T R A N S IS T O R S R atings and Specifications C O L L MER S E M I C O N D U C T O R EH • • * * INC MöE J> m E O S • COL P o w e r t r a n s is t o r s a n d free w h e e ls a re bu ilt in to o n e p ac ka ge . A ll te r m in a ls a re in su la te d fr o m m o u n t in g plate.

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

sgsf 465 equivalent

Abstract: BU 508D equivalent 2sd transistors equivalent SGSF465 sgsf 344 equivalent transistors 2sd 2500 bu 1577 bu508 SGSIF 444 SGSF 465
Contextual Info: SCS-THOMSON CONSUMER RÎ90 l^©IIQJ£©in^©RODO^ TV, MONITORS AND VCR CIRCUITS DEFLECTION • TRANSISTORS TO 220 ISOWATT 220 ISOWATT 218 TO 3 Internal schematic diagrams c HIGH DEFINITION COLOUR MONITORS HORIZONTAL DEFLECTION These NPN transistors feature very fast switching times typically 3 to 5 times faster than 1500 V products designed

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT D 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST FT LTR DESCRIPTION DIM A+.020 0.145 THRU HOLE 2 PLC DIM B + .020 T .50 1 C .53 .52 B ^ .52 - ,09±.02 - .052 TYP —

TDA 4600-2

Abstract: "if amplifier" siemens
Contextual Info: bOE D • SIEM ENS ê235hûS D O M m b l 20b « S I E G SIEMENS AKTIEN6ESELLSCHAF Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic

TDA 4600-2

Abstract: tda4600 BY360 Q63100-P2462-J29 TDA4601D tda4601 SMPS CIRCUIT DIAGRAM TDA 4600 class d amplifier tda Q63100 P2462-J29
Contextual Info: bGE D SIEMENS fl235bGS OOMTMbl EOb « S I E G SIEMENS AKTIENGESELLSCHAF -pStf-ll-31 Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic

E67006

Contextual Info: Cartridge Fuses 3AB > Slow Blow > 356 Series 356 Series Lead-Free 3AB, Slow-Blow Fuse Description The 3AB special type cartridge fuse for protection of high voltage and surge tolerant applications. Features t
0OMZ
BWBJMBCMF
JO
cartridge format. t
3P 4
DPNQMJBOU
BOE

BU208

Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
Contextual Info: M OTOROLA SC X ST R S/R F MOTOROLA BU207 BU208 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTORS 1300 AND 1500 VOLTS HORIZONTAL DEFLECTION TRANSISTOR . . . specifically designed for use in large screen color deflection

sd1555

Abstract: s2055af 4 s2055af S2055 2SD142 2SD871 2sd820
Contextual Info: TOSHIBA 6 D eflection System 6-1 D eflection System * : U nd er developm ent 6-2 V ertical Deflection O u tp u t T ransistors '^ ^ -v ^ ^ P a ck ag e Characteristics V C E O = 160 V l c = 1A V c e o = 150 V *c* 1-5A TO -1 2 6 TO -2 0 2 2 SC 2 3 83 2SA1Q 13

SC-X15111

Abstract: MIL-R-46846 SC-X-15112 SC-X15112 Mil-R-46846 TYPE V M23053 SCX-15111 VTN-200 mdt-2000 MDT110
Contextual Info: Military Specification to 3M Heat Shrink Tubing Mil Spec P/N 3M P/N M23053/1- 101 -0 NST 1/4" Black M23053/1- 102 -0 NST 3/8" Black M23053/1- 103 -0 NST 1/2" Black M23053/1- 104 -0 NST 5/8" Black M23053/1- 105 -0 NST 3/4" Black M23053/1- 106 -0 NST 7/8" Black

74LVX 244 D

Contextual Info: 1-1 T C 7 4 L V Q /LV X Product Guide TC 74LVQ Series Type No. TC 74LVQ TC74LVQ TC74LVQ TC74LVQ Function Pin Page 00 F / F N / F S 02 F / F N / F S Q U A D 2-INPUT N A N D GATE Q U A D 2-INPUT N O R G ATE 14 14 04 F / FN /F S 08 F / FN /F S 14 F / FN /F S

TEA2164 equivalent

Abstract: TEA7605SP BU 508D equivalent tda4601 equivalent sgsf465 bu 208 equivalent TEA7605SP equivalent sgsf 465 equivalent BU 508D TEA7685SP
Contextual Info: SCS-THOMSON CONSUMER RÎ90 l^©IIQJ£©in^©RODO^ TV, MONITORS AND VCR CIRCUITS DEFLECTION • TRANSISTORS TO 220 ISOWATT 220 ISOWATT 218 TO 3 Internal schematic diagrams c HIGH DEFINITION COLOUR MONITORS HORIZONTAL DEFLECTION These NPN transistors feature very fast switching times typically 3 to 5 times faster than 1500 V products designed