BU 108 Search Results

TRANSISTOR D 2627

Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage

Contextual Info: M I I C R O N 4’ 8 M EG x 64 NONBUFFERED DRAM DIMMs D RAM MT4LDT464A X , MT8LDT864A (X) _ _ _ It I I I I | j I I I For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ 1 *1 V y U W datasheet.html L - I—

TB1226D

Abstract: TB1226 LTV 547 EH TB1226DN tb1226dn-70 tb122gdn-73 TS-1226 dh23 tb122gdn VMT-13
Contextual Info: TB1226DN TO SHIBA TENTATIVE TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB1226DN VIDEO, CHROM A AND SYNCHRONIZING SIGNALS PROCESSING IC FOR P A L /N T S C /SECA M SYSTEM COLOR TV TB1226DN that is a signal processing IC for the PAL/ NTSC/SECAM color TV system integrates video, chroma

Contextual Info: a.2 ?.a CT R A D E MARO C in ass? C IR C U IT NO. »fí*wrí» 45# P A R T NAM E n ß p n lt ^ P A R T NO. £ 1. 2. 3. H EA D ER HOUSING M AT ER IA L & FINISH 6 6 - f 'f P > ^ 7 X ^ ib ( U L 9 4 V - 0 ) 66 NYLON GLASS FILLED CTI : UL LEVEL2. 250~399V

Contextual Info: Advance information •■ AS4LC4M 4S0 II 3.3V 4 M x 4 C M O S synchronous DRAM Features • • • • • • • • Organization: 2 ,0 9 7 ,1 5 2 words X 4 bits X 2 banks All signals referenced to positive edge of clock Dual internal banks controlled by BA

cs 2313

Contextual Info: M OSEL V I T E L I C V43728S04VTG 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 AND 100 MHZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: IB M 1 3 T 1 6 4 9 N C 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin em erging JE D E C S tandard, 8 Byte Sm all O utlin e D u al-In -lin e M em o ry M odule • P rog ram m a ble O peration: -C A S Latency: 1, 2, 3 • 1 M x64 S ynch ron ou s DR AM SO DIM M

Contextual Info: £0 m a « HSP45116/883 N um erically Controlled O scillator/M odulator Features Description • This Circuit Is Processed In Accordance to MIL-STD883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The Harris HSP45116/883 combines a high performance

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description T h e M C -4 5 1 6 C A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of

Contextual Info: ADVANCE MICRON M T16LD T 464(S) 4 MEG X 64 DRAM MODULE I 4 MEG X 64 DRAM 3.3V, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V pow er supply

Contextual Info: ADVANCE 4M E Gx72 MICRON • REGISTERED SDRAM DIMM SYNCHRONOUS IJ | 1 li il R A A ^IV I IVI III ^ MT18LSDT472 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html PIN ASSIGNMENT Front View FEATURES

color tv block diagram

Abstract: ADV7403 ADV7344 PAL to ITU-R BT.601/656 Decoder T-1004 DVD RW pickup assembly HD tri-level sync generator smpte 274m BT135
Contextual Info: Multiformat Video Encoder Six 14-Bit Noise Shaped Video DACs ADV7344 FEATURES EIA/CEA-861B compliance support Programmable features Luma and chroma filter responses Vertical blanking interval VBI Subcarrier frequency (FSC) and phase Luma delay Copy generation management system (CGMS)

RTD TRANSFER FUNCTION

Abstract: PT200 RTD reference table PT200 Platinum RTD reference table pt100 to 4-20 ma ic 2N6121 XTR103 XTR103AP XTR103AU XTR103BP RTD SENSING CIRCUIT 4-20mA
Contextual Info: XTR103 4-20mA Current Transmitter with RTD EXCITATION AND LINEARIZATION FEATURES APPLICATIONS ● LESS THAN ±1% TOTAL ADJUSTED ERROR, –40°C TO +85°C ● RTD EXCITATION AND LINEARIZATION ● INDUSTRIAL PROCESS CONTROL ● FACTORY AUTOMATION ● SCADA

Contextual Info: TOSHIBA THMY7216H1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216H1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: Datasheet R1QGA4436RBG,R1QGA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency R10DS0139EJ0200 Rev.2.00 Jun 01, 2013 Description The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: MOSEL VITELIC V43648Z0V 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM

TMS626812

Contextual Info: TM2SR72EPH 2097152 BY 72-BIT TM4SR72EPH 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS705A - FEBRUARY 1998 - REVISED APRIL 1998 • Organization - TM 2S R 72E P H , - TM4SR72EPH 2 0 9 7 1 5 2 x 7 2 Bits . 4 1 9 4 3 0 4 x 7 2 Bits Single 3.3-V Power Supply

xxxxw

Abstract: XXXW R4650L 4650L
Contextual Info: jP 64 bit NKK RISC Embedded Controller NR4650L • FEATURES • Large, efficient on-chip caches • High-perform ance em bedded 64-bit m icroprocessor - 64-bit integer operations - Separate 8KB Instruction and Data caches - 64-bit registers - Over 1500MB/sec bandwidth from internal caches

Contextual Info: SN54HC367, SN74HC367 HEX BUFFERS AND LINE DRIVERS WITH 3ĆSTATE OUTPUTS SCLS309D − JANUARY 1996 − REVISED SEPTEMBER 2003 D Wide Operating Voltage Range of 2 V to 6 V D High-Current 3-State Outputs Drive Bus D D D D D Lines, Buffer Memory Address Registers,

Contextual Info: LATTICE SEMICONDUCTOR Lattica bûE D • 5301^4= 0QG27Ü7 b4T HILA T pLSI and ispLSI 3256 High Density Programmable Logic Features Functional Block Diagram • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — High Speed Global Interconnect 128 I/O Pins

Contextual Info: IBM13N3649JC 3M x 64 2 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 1 , 2 , 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only - Operation: Burst Read and W rite or Multiple

csi 93c46

Abstract: LC502 20pmt04a IC565 ycl 20PMT04A
Contextual Info: - l 3 VER: 0 . 1 _ K ^ v J !U 334280110 F OR Q U IC K S T A R T M O D E 50 0M H z 45 0M H z 40 0M H z VC C C U f' STt*v . Ü R237 R34 10K 10K = ^ S 'JM P ,. 13 - X J2 _ _ _ -< < rC s D *‘ “r i i - siz e D o c u m e n t Numbe> C PU _A 1 60V 1 60V 1 35 V

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516DA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T h e M C -4 5 1 6 D A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of

li ion toshiba scheme

Abstract: TC351 toshiba facsimile tc35 T5645 dsv 11 MPS 1213 Integrated Circuit
Contextual Info: T O S H IB A INTEGRATED CIRCUIT TC35107F CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TECHNICAL DATA TC 35107F 9600BPS M O D E M The TOSHIBA TC35107F is a modem LSI designed for use in Group 3 facsimile machines. The modem is capable of operating over the public