BSY 51 Search Results

BSY51

Abstract: BSY 51 BSY52 bsy 39
Contextual Info: BSY 51 BSY 52 NPN SILICON TRAN SISTO R S, E P IT A X IA L P L A N A R T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P I T A X I A U X • LF amplification A m p lific a t io n B F - Switching C o m m u ta tio n v CBO 60 V h21E 150 mA| 100-300 (BSY 52

59c11

Abstract: 200B
Contextual Info: 59C11 1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS CS 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS SOIC 59C11 DESCRIPTION The Microchip Technology Inc. 59C11 is a 1K bit Electrically Erasable PROM. The device is configured as

Contextual Info: CXD1185CR 2/3 2 1 64 63 27 28 29 30 42 43 44 55 3 5 6 7 8 10 11 12 13 15 16 59 60 61 62 A0 INIT A1 TARG A2 IRQ A3 DRQ RES ACK CS RST RE MSG WE SEL C/D DACK WED REQ I/O RED C0 CLK C1 C2 DB0 C3 DB1 C4 DB2 C5 DB3 C6 DB4 C7 DB5 DB6 D0 DB7 D1 DBP D2 ATN D3 BSY

28LV64A

Abstract: DK-2750
Contextual Info: Obsolete Device 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6

28C64A

Abstract: 28C64A-15 28C64A-20 28C64A-25
Contextual Info: Obsolete Device 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13

tce 1994

Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC PLCC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 21 I/O6 17 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 16 DIP/ SOIC

Contextual Info: CXD1185CQ 1/3 IL08 * C-MOS SCSI CONTROLLER - TOP VIEW - GND GND V DD (+5V) VDD (+5V) GND GND GND GND 52 53 54 55 56 57 58 59 60 61 62 63 64 GND 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Contextual Info: M 93C76/86 ic r o c h ip 8K/16K 5.0V CMOS Serial EEPROM PIN CONFIGURATION FEATURES • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8 or 512 x 16 bit organization 9X 76

Contextual Info: TOSHIBA TENTATIVE TC58FVT004/B004FT-85,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 M 512 K X 8 BIT CMOS FLASH MEMORY DESCRIPTION The TC58FVT004/B004 is a 4,194,304 - bits, 3.0 Volt - only Electrically Erasable and Programmable Flash memory organized as 524,288 words X 8 bits. The TC58FVT004/B004 features commands for

Contextual Info: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed

Contextual Info: & 93C76/86 M f C R O C H IP* 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization 93C76

93C76

Abstract: 200B 93C86 BSY29
Contextual Info: 93C76/86 8K/16K 5.0V CMOS Serial EEPROM FEATURES PIN CONFIGURATION • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8 or 512 x 16 bit organization 93C76 2048 x 8 or 1024 x 16 bit organization (93C86)

Contextual Info: TOSHIBA TC58FVT400/B400F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4M 512 K X 8 / 256 K X 16 BIT CMOS FLASH M EM O RY DESCRIPTION The TC58FVT400/B400 is a 4,194,304 - bits, 3.0 Volt - only Electrically E rasab le and Programm able

ci 7411

Contextual Info: On-Chip Peripheral Components 7.4 A/D Converter The SAB 80 C 515 provides an A/D converter with the following features: – Eight multiplexed input channels – The possibility of using the analog input channels (port 6) as digital inputs (ACMOS version only).

Contextual Info: HANBit HFDOM40S3Rxxx 40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: HANBit HFDOM44S3Rxxx 44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: IMIi c r o c m 93C76/86 kp 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization 93C76

TC58FVT400FT

Abstract: VT400F B400F
Contextual Info: TO SHIBA TC58FVT400/B400F/FT-85#-10#-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4M 512 K X 8 / 256 K X 16 BIT CMOS FLASH MEMORY DESCRIPTION The TC58FVT400/B400 is a 4,194,304 - bits, 3.0 Volt - only Electrically E rasab le and Program m able

Contextual Info: TOSHIBA TC58FVT400/B400F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4M 512 K X 8 / 256 K X 16 BIT CMOS FLASH MEMORY DESCRIPTION The TC58FVT400/B400 is a 4,194,304 - bits, 3.0 Volt - only Electrically Erasable and Programmable

d501ad

Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

AT29LV010A

Abstract: AT89S4D12 MCS-51
Contextual Info: AT89S4D12 Features • Compatible with MCS-51 Products • 128K Bytes of In-System Reprogrammable Flash data memory and 4K Bytes of • • • • • • • • • Downloadable Flash Program Memory – Endurance: 1,000 Write/Erase Cycles per Sector

93c56 14 pin

Abstract: MICROCHIP - 93C66 93C56 93C56 14 pins chip 8-pin 93C66 93C66 CT2R B-057
Contextual Info: M i c r o c h 93C56/66 i p 2K/4K 5.0V CM OS Serial EEPROM FEATURES PACKAGETYPE • Low power CMOS technology DIP • ORG pin selectable m em ory organization -x z r - 256 x 8 or 128 x 16 bit organization 93C56 cs C - 512 x 8 or 256 x 16 bit organization (93C66)

NAND FLASH SAMSUNG

Abstract: 848a hs010 MARKING 016H
Contextual Info: Flash Cards ATA45 Series White Electronic Designs ATA45 Series FLASH CARDS 8MB to 512MB PRODUCT DESCRIPTION ATA45 series Flash ATA cards are built with NAND flash memory components operating as solid-state disk. They comply with the PC card ATA standard and are suitable for

Contextual Info: TOSHIBA TENTATIVE TC58FVT004/B004FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 M 512 K X 8 BIT CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT004/B004 is a 4,194,304 - bits, 3.0 Volt - only electrically erasable and programmable