BST N23 40 Search Results

BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Contextual Info: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag

FBGA672

Abstract: IOAD16 8 IOG20 AGILENT TECHNOLOGIES 3070 ioa18 ieee 1532 EPC16 EPF81500A EPF8282A EPF8636A
Contextual Info: IEEE 1149.1 JTAG Boundary-Scan Testing in Altera Devices June 2005, ver. 6.0 Introduction Application Note 39 As printed circuit boards PCBs become more complex, the need for thorough testing becomes increasingly important. Advances in surfacemount packaging and PCB manufacturing have resulted in smaller

FBGA672

Abstract: ioa18 fbga672 paging EPF8282A EPF8282AV EPF8636A EPF8820A EPM7032S EPM7064S AGILENT TECHNOLOGIES 3070
Contextual Info: IEEE 1149.1 JTAG Boundary-Scan Testing in Altera Devices June 2005, ver. 6.0 Introduction Application Note 39 As printed circuit boards (PCBs) become more complex, the need for thorough testing becomes increasingly important. Advances in surfacemount packaging and PCB manufacturing have resulted in smaller

Hitachi DSA002754

Abstract: Nippon capacitors
Contextual Info: HB52R168DB-F 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-1098 (Z) Preliminary Rev. 0.0 Sep. 3, 1999 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory

BC149C

Abstract: HB52R168DB-10DL Hitachi DSA00164 Nippon capacitors
Contextual Info: HB52R168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-973 (Z) Preliminary, Rev. 0.0 Nov. 6, 1998 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB52R168DB-F 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-1098A (Z) Rev. 1.0 Jan. 24, 2000 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory

BSW 002 2nd year date sheet

Abstract: HB52R168DB-10 HB52R168DB-10L HM5264405TB Hitachi DSA00196 Nippon capacitors
Contextual Info: HB52R168DB Series 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-886A (Z) Rev. 1.0 Jul. 15, 1998 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory

Contextual Info: HB52R168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-973 (Z) Preliminary, Rev. 0.0 Nov. 6, 1998 Description The HB52R168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

ty9000

Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
Contextual Info: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous

TY9000

Abstract: MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM TY90009400FMGF
Contextual Info: TY90009400FMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400FMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

ty9000

Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
Contextual Info: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

ty9000

Abstract: MCP 256M nand toshiba ty90 TY90009400DMGF toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM P-FBGA149-1013-0
Contextual Info: TY90009400DMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400DMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

MCP 256M nand toshiba

Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
Contextual Info: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package

F1022

Abstract: f1031 MC19 PZ3960C7EB PZ3960N8EB sot514 F929 F926 Philips F423 f811
Contextual Info: INTEGRATED CIRCUITS PZ3960C/PZ3960N 960 macrocell SRAM CPLD Preliminary specification Supersedes data of 1998 Jan 21 IC27 Data Handbook Philips Semiconductors 1998 Jul 21 Philips Semiconductors Preliminary specification 960 macrocell SRAM CPLD PZ3960C/PZ3960N

rpack8 56

Abstract: HDR2x7 rpack8 PCI_T32 MegaCore EPM3256ATC144-7 ERJ-3GEYJ101 APEX20K400E "APEX PCI development board" EP20K400EFC672-1X OSC50MHZ
Contextual Info: APEX PCI Development Board April 2002, ver. 2.1 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ General Description Altera Corporation DS-A20KEPCI-2.1 Included with the APEXTM PCI development kit Rapid prototyping platform for both PCI systems and desktop

GTS FC-22

Abstract: F9222 "XOR Gate" XOR GATE uses f0114 F9221 L16 eeprom F8222 verilog code for implementation of eeprom MC19
Contextual Info: DS032 v1.1 XCR3960: 960 Macrocell SRAM CPLD R DS032 v1.1 February 10, 2000 8* Product Specification Features Description • • • The XCR3960 device is a member of the CoolRunner family of high-density SRAM-based CPLDs (Complex Programmable Logic Device) from Xilinx. This device combines high-speed and deterministic pin-to-pin timing with

RTSX32SU CQ84 PROTO

Abstract: RTSX32SU CQ84 RTSX72SU1 SOC 8A fuse smd RTSX32su CG624 thermal expansion
Contextual Info: Revision 9 RTSX-SU Radiation-Tolerant FPGAs UMC Designed for Space • SEU-Hardened Registers Eliminate the Need to Implement Triple-Module Redundancy (TMR) – Immune to Single Event Upsets (SEU) to LETth > 40 MeVcm2/mg, – SEU Rate < 10–10 Upset/Bit-Day in Worst-Case

A54SX08

Abstract: A54SX08A A54SX16 A54SX16A A54SX32 A54SX32A A54SX72A PAR64
Contextual Info: v3.0 SX-A Family FPGAs Le a di n g- E d ge P er f o r m a n ce • Configurable I/O Support for 3.3V/5.0V PCI, 5.0V TTL, and 2.5 V/3.3V LVTTL • 2.5V, 3.3V, and 5.0V Mixed Voltage Operation with 5.0V Input Tolerance and 5.0V Drive Strength • Configurable Weak-Resistor Pull-up or Pull-down for

A54SX16A

Abstract: A54SX08 A54SX08A A54SX16 A54SX32 A54SX32A A54SX72A PAR64 REQ64 antifuse programming technology
Contextual Info: Preliminary v1.2 SX-A Family FPGAs Le a di n g- E d ge P er f o r m a n ce • Configurable I/O Support for 3.3V/5.0V PCI, 5.0V TTL, and 2.5 V/3.3V LVTTL • 2.5V, 3.3V, and 5.0V Mixed Voltage Operation with 5.0V Input Tolerance and 5.0V Drive Strength • Configurable Weak-Resistor Pull-up or Pull-down for

Contextual Info: v3.0 SX-A Family FPGAs Leading-Edge P erfo rm an c e • 250 MHz System Performance • 3.8ns Clock-to-Out Pad-to-Pad • 350 MHz Internal Performance S p ec ific atio n s • • • • 12,000 to 108,000 Available System Gates Up to 360 User-Programmable I/O Pins

22B2 DIODE

Abstract: A54SX08A A54SX16A A54SX32A A54SX72A PQ208 TQ100 TQ144 TQ176
Contextual Info: v5.2 SX-A Family FPGAs u e Leading-Edge Performance • • • 250 MHz System Performance 350 MHz Internal Performance • • • Specifications • • • • • • 12,000 to 108,000 Available System Gates Up to 360 User-Programmable I/O Pins Up to 2,012 Dedicated Flip-Flops

22B2 DIODE

Abstract: RTSX-S datasheet SX FPGAs A54SX08A A54SX16A A54SX32A A54SX72A PQ208 TQ100 TQ144
Contextual Info: v5.1 SX-A Family FPGAs Leading-Edge Performance • • • 250 MHz System Performance 350 MHz Internal Performance • • • Specifications • • • • • • 12,000 to 108,000 Available System Gates Up to 360 User-Programmable I/O Pins Up to 2,012 Dedicated Flip-Flops

vdr10

Abstract: ADC12D1800 DQD-11 CY7C68013A-128AXC semiconductor c243 ADC12D1600 c185 transistor ADC12D1000RB ece r10 CY7C68013A
Contextual Info: 5 4 3 2 1 ADC12D1XXX Reference Board D D REFERENCE DESIGN SPECIAL NOTES C C These schematics reflect the current state of product development. This design had NOT yet been fully tested at the time these schematics were generated. Since this product is in development, the user of this document is

RSV02

Abstract: C245 CY7C68013A-128AXC HEADER 10x3 transistor c114 digital ADC10D1000 11X17 VDR14 XCF08PVO48
Contextual Info: 5 4 3 2 1 ADC10D1000 Reference Board D D REFERENCE DESIGN SPECIAL NOTES C C These schematics reflect the current state of product development. This design had NOT yet been fully tested at the time these schematics were generated. Since this product is in development, the user of this document is