BSS138 MARKING Search Results

L55 SOT23

Abstract: bss138 BSS138 50V
Contextual Info: BSS138 N-Channel Enhancement Mode Vertical DMOS FET BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling APPLICATIONS

K38 SOT-23

Abstract: BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING DS30144 marking k38 BSS138-7 BSS138-7-F
Contextual Info: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23

BSS138 TO236

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

BSS138G

Abstract: BSS138 TO236 BSS138
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves

BSS138G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

BSS138/J1

Abstract: BSS138 onr 20
Contextual Info: BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter

PHILIPS DMOS FET

Contextual Info: Philips Components Data sheet status Preliminary specification BSS138 date of issue September 1990 N-channel enhancem ent m ode vertical D-M O S FET FEATURES PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance. PINNING - SOT223

K38 mosfet

Abstract: BSS138 equivalent equivalent of bss138 bss138 k38 BSS138-7-F
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)

Contextual Info: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω

bss138

Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92
Contextual Info: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA

bss138 MARKING

Abstract: bss138 k38 bss138 MARKING c38 BSS138 BSS138Q BSS138 equivalent BSS138Q-7-F marking k38 K38 mosfet
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

bss138 MARKING

Abstract: BSS138
Contextual Info: BSS138 GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS ON < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram APPLICATION

K38 SOT-23

Abstract: BSS138 marking k38 transistor bss138 BSS138-7 J-STD-020A bss138 MARKING MARKING k38 SOT23
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · · · · · · C G TOP VIEW S

Contextual Info: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology

Contextual Info: MOSFET SMD Type N-Channel Enhancement Mode MOSFET BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1

Contextual Info: MOSFET SMD Type Product specification BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1

marking code ss

Contextual Info: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE ET T Top View NF E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA TM .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • N-Channel Enhancement Mode High dense cell design for extremely low RDS ON

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • • N-Channel Enhancement Mode Halogen free available upon request by adding suffix "-HF"

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA