BSC070N10NS3 G Search Results
BSC070N10NS3 G Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| BSC070N10NS3G |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 90A TDSON-8 | Original | 10 | |||
| BSC070N10NS3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 90A TDSON-8 | Original | 418.55KB |
BSC070N10NS3 G Price and Stock
Infineon Technologies AG BSC070N10NS3GATMA1MOSFET N-CH 100V 90A TDSON-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC070N10NS3GATMA1 | Digi-Reel | 20,550 | 1 |
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BSC070N10NS3GATMA1 | Reel | 5,000 | 26 Weeks | 5,000 |
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BSC070N10NS3GATMA1 | 8,109 |
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BSC070N10NS3GATMA1 | 4,906 | 36 |
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BSC070N10NS3GATMA1 | Cut Tape | 1 |
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BSC070N10NS3GATMA1 | 3,620 |
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BSC070N10NS3GATMA1 | 46,289 | 1 |
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BSC070N10NS3GATMA1 | Reel | 5,000 | 5,000 |
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BSC070N10NS3GATMA1 | Cut Tape | 4,906 | 0 Weeks, 1 Days | 1 |
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BSC070N10NS3GATMA1 | 25,000 | 5,000 |
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BSC070N10NS3GATMA1 | 67,740 |
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Infineon Technologies AG BSC070N10NS3 GMOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC070N10NS3 G | 12,384 |
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Infineon Technologies AG BSC070N10NS3GATMA1.Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:114W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSC070N10NS3GATMA1. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC070N10NS3GATMA1. | Reel | 5,000 | 5,000 |
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Infineon Technologies AG BSC070N10NS3G |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC070N10NS3G | 141 | 3 |
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BSC070N10NS3G | 75,000 |
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BSC070N10NS3 G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BSC070N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS • Very low gate charge for high frequency applications • Optimized for dc-dc conversion 100 V RDS on ,max 7 mW ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM) |
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BSC070N10NS3 IEC61249-2-21 070N10NS | |
BSC070N10NS3
Abstract: 070n10ns IEC61249-2-21 JESD22 BSC070N10NS3 G
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BSC070N10NS3 IEC61249-2-21 070N10NS 070n10ns IEC61249-2-21 JESD22 BSC070N10NS3 G | |
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TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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