BSB012NE2LXI Search Results
BSB012NE2LXI Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| BSB012NE2LXIXUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 170A WDSON | Original | 1.29MB |
BSB012NE2LXI Price and Stock
Infineon Technologies AG BSB012NE2LXIXUMA1MOSFET N-CH 25V 170A 2WDSON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSB012NE2LXIXUMA1 | Reel |
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BSB012NE2LXIXUMA1 | 10,840 |
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Infineon Technologies AG BSB012NE2LXIMetal Oxide Semiconductor Field Effect Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSB012NE2LXI | 11,900 |
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BSB012NE2LXI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BSB012NE2LXI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 1.2 mW ID 180 A Qoss |
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BSB012NE2LXI | |
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Contextual Info: BSB012NE2LXI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 1.2 mW ID 180 A Qoss |
Original |
BSB012NE2LXI | |
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Contextual Info: BSB012NE2LXI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 1.2 mW ID 180 A Qoss |
Original |
BSB012NE2LXI | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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