BROADBAND IMPEDANCE TRANSFORMATION Search Results

BLS2731-10

Abstract: AN98029 broadband impedance transformation
Contextual Info: APPLICATION NOTE Broadband impedance matching for S-Band Transistors AN98029 Philips Semiconductors Broadband impedance matching for S-Band Transistors CONTENTS 1 INTRODUCTION 2 DESIGN METHOD 3 IMPEDANCE MEASUREMENT 4 FITTING DATA TO MODEL 5 LUMPED ELEMENT INPUT AND OUTPUT

An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
Contextual Info: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T

power amplifier transformer

Abstract: "30 mhz" driver Amplifier SLOA100 6062a RF Signal Generator 715-10-1 adsl typical "bit error rate" avr-1x 3 25R2 4R22 THS6032
Contextual Info: Application Report SLOA100 - November 2002 Active Output Impedance for ADSL Line Drivers Randy Stephens Member Group Technical Staff Broadband Amplifiers Systems Specialist High Performance Linear Products ABSTRACT Signal termination is very common in bidirectional communication systems. Termination

footprint ceramic capacitor footprint 0402

Contextual Info: Model BD0922J75100A00 Rev A Ultra Low Profile 0805 Balun 75Ω to 100Ω Balanced Description The BD0922J75100A00 is a broadband low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets and any application requiring an impedance

broadband impedance transformation

Contextual Info: Model BD0922J75100AHF Rev A Ultra Low Profile 0805 Balun 75Ω to 100Ω Balanced Description The BD0922J75100AHF is a broadband low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets and any application requiring an impedance

AD8343ARUZ

Abstract: broadband impedance transformation AD8343 BLM21P300S C11A C12A ETC1-1-13 HP8130 HP8648C TC1-1-13
Contextual Info: DC-to-2.5 GHz High IP3 Active Mixer AD8343 High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB Input P1dB: 2.8 dBm Differential LO, IF and RF Ports 50 Ω LO input impedance

Contextual Info: DC-to-2.5 GHz High IP3 Active Mixer AD8343 High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB Input P1dB: 2.8 dBm Differential LO, IF and RF Ports 50 Ω LO input impedance

AD8343ARUZ

Abstract: LQW1608A tektronix 2230 AD8343 BLM21P300S C10A C10B C11A C11B HP8130
Contextual Info: DC-to-2.5 GHz High IP3 Active Mixer AD8343 High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB Input P1dB: 2.8 dBm Differential LO, IF and RF Ports 50 Ω LO input impedance

LDB20C

Abstract: ECT1-1-13 ERJ6GEYJR00V PANASONIC murata MA188R2J MA180R4B tektronix 2230 AD8343 AD8343ARU AD8343ARU-REEL AD8343ARU-REEL7
Contextual Info: a FEATURES High-Performance Active Mixer Broadband Operation to 2.5 GHz Conversion Gain: 7.1 dB Input IP3: 16.5 dBm LO Drive: –10 dBm Noise Figure: 14.1 dB Input P1 dB: 2.8 dBm Differential LO, IF and RF Ports 50 ⍀ LO Input Impedance Single-Supply Operation: 5 V @ 50 mA Typical

HP8130

Abstract: LDB20C murata MA188R2J AD8343 AD8343ARU AD8343ARU-REEL AD8343ARU-REEL7 AD8343-EVAL HP8648C RU-14
Contextual Info: a FEATURES High-Performance Active Mixer Broadband Operation to 2.5 GHz Conversion Gain: 7.1 dB Input IP3: 16.5 dBm LO Drive: –10 dBm Noise Figure: 14.1 dB Input P1 dB: 2.8 dBm Differential LO, IF and RF Ports 50 ⍀ LO Input Impedance Single-Supply Operation: 5 V @ 50 mA Typical

AD8342

Abstract: ADL5561 TC2-1T 400M AD8351 AD8352 AD8370 AD8375 AD8342ACPZ-R21 1435d
Contextual Info: Active Receive Mixer LF to 3 GHz AD8342 Broadband RF, LO, and IF ports Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Open-collector IF output port

Contextual Info: Active Receive Mixer LF to 3 GHz AD8342 Broadband RF, LO, and IF ports Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Open-collector IF output port

TC2-1T

Abstract: AD8370 400M AD8342 AD8351 AD8352 AD8369
Contextual Info: Active Receive Mixer LF to 2.4 GHz AD8342 Broadband RF, LO, and IF ports Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Open-collector IF output port

AD8342

Abstract: 400M 700M AD8351 AD8369
Contextual Info: Active Receive Mixer LF to 500 MHz AD8342 Broadband RF port: LF to 500 MHz Conversion gain: 3.7 dB Noise figure: 12.2 dB Input IP3: 22.7 dBm Input P1dB: 8.3 dBm LO drive: 0 dBm Differential high impedance RF input port Single-ended, 50 Ω LO input port Single-supply operation: 5 V @ 98 mA

Broadband Class-E Power Amplifier Designed by Lumped-Element Network Transforms and GaN FETs

Contextual Info: Broadband Class-E Power Amplifier Designed by Lumped-element Network Transforms and GaN FETs IMS2015 TU1B-1 Broadband Class-E Power Amplifier g by y Lumped-Element p Network Designed Transforms and GaN FETs Ramon Beltran, PhD Newbury Park, CA 1 Broadband Class-E Power Amplifier Designed by Lumped-element

GaN amplifier

Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Contextual Info: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2

article.

Abstract: UHF Amplifier Design Using Coaxial Transformers simulation files NONLINEAR MODEL LDMOS
Contextual Info: From May 2003 High Frequency Electronics Copyright 2003 Summit Technical Media, LLC High Frequency Design BROADBAND DESIGN Broadband VHF/UHF Amplifier Design Using Coaxial Transformers By C. G. Gentzler and S.K. Leong Polyfet RF Devices T he desire of the

bd139 equivalent

Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
Contextual Info: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION

bd139 equivalent transistor

Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
Contextual Info: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION

MRF873

Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
Contextual Info: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and

Sawtek filter

Abstract: RF2411 uhf receiver
Contextual Info: TA0026
 TA0026 The RF2411 General Purpose UHF Downconverter IC 

        
  1500MHz, as plotted in Figure 2. LNA reverse isolation Communication receivers are constructed using a superheterodyne architecture. The received signal frequency is converted to a lower “intermediate” frequency IF in one or more steps for efficient

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor
Contextual Info: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances: Practical Considerations Prepared by: Alan Wood and Bob Davidson

MRF873

Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:

SSB Receiver

Abstract: RF2411 RF transistor gain 20dB
Contextual Info: TA0026  TA0026 The RF2411 General Purpose UHF Downconverter IC 7KH 5  *HQHUDO 3XUSRVH 8+) 'RZQFRQYHUWHU ,& ,QWURGXFWLRQ Communication receivers are constructed using a superheterodyne architecture. The received signal frequency is converted to a lower “intermediate” frequency IF) in one or more steps for efficient