BROAD RANGE IR SOURCE Search Results

Contextual Info: IR Emitter and Detector LTE-R38386-S 1. Description Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wireless data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed and wide viewing

C2719

Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Hamamatsu PbS

Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Hamamatsu PbS

Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

C1103-04

Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

A1701

Abstract: NEC 701A P 1701A LD1701
Contextual Info: I . I / I S A d vanced 1 L in e a r [Z J Z ir Devices ALD1701A/ALD1701B ALDI 701/ALD1701G MICROPOWER RAIL TO RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION PIN CONFIGURATION The ALD 1701 is a monolithic CMOS micropower high slew rale operational amplifier intended for a broad range of analog applications

toshiba tlc 711

Abstract: RDRAM Clock T3D Toshiba
Contextual Info: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video

Contextual Info: ENCASED PIEZO ALARMS WITH INTERNAL CIRCUITRY m u F fn fn PKB Series T he PC board m ountable piezo alarm s described on this page are com pletely self-contained alarm s requiring only a DC voltage source fo r operation. P roviding the user w ith high audio

GaAs 850 nm Infrared Emitting Diode

Abstract: OP265 OP265WPS OP505 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265WPS Features: • • • • • T-1 3 mm package style Broad irradiance pattern Point source with flat lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: The OP265WPS point source model is a flat-lensed 850 nm diode with a broad radiation pattern that provides

led diode 5 watt

Abstract: "3 watt led" 3 watt led ILL5A0002B "10 watt incandescent" 505nm led light 10 watt white diode broad range IR Source
Contextual Info: Compact LED Engine Light Source 1 High Power Light Emitting Diode 3 Watt LED Similar output as 10 Watt incandescent bulb Colors: Cool White, Warm White, Red and Cyan Model-ILL5A0002 1.74” (44.2mm) round compact source High efficiency optics: 5 or 25 degrees (see

OP265WPS

Contextual Info: Product Bulletin OP265WPS November 2000 Plastic Point Source Infrared Emitting Diode Type OP265WPS 150 Absolute Maximum Ratings TA = 25o C unless otherwise noted Features Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V

Contextual Info: •$: s W^M: t ¥ i ■ ; f e * L H i m ïïm ■'■■'I-.;-:'-."-.Iâ :; wmm 8 14 • Dual Channel Detectors in TO 5 Housing o a ^ :$ r : • Two Different IR Filters built in • Designed for Gas Monitoring 2.66 '.!:i'i!:!i I.:-.:SN?.: ® IP I *

CLE331E

Contextual Info: CLE331E PRELIMINARY DATA Super-efficient Aluminum Gallium Arsenide IRED Point Source Die features • • • . • • • • Clairex® Technologies, Incorpo rated November, 1997 absolute maximum ratings Ta=25°C unless otherwise stated. high power output

Contextual Info: CLE331E PRELIMINARY DATA Super-efficient Aluminum Gallium Arsenide IRED Point Source Die Ctairex® Technologies, Incorporated November, 1997 A LL DIMENSIONS A R E IN N CH ES. features • • • . • • • • absolute maximum ratings Ta =25°C unless otherwise stated.

HE8811

Contextual Info: HE8811 GaAlAs Infrared Emitting Diode ODE-208-999B Z Rev.2 Mar. 2005 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments

HE8811

Abstract: ODE-208-999A
Contextual Info: HE8811 GaAlAs Infrared Emitting Diode ODE-208-999A Z Rev.1 Jan. 2003 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments

Contextual Info: IIIHCRTRUrST PRELIM IN A RY Umili CÄT508 -SV Precision Reference FEATURES S E M I C O N D U C T O R D ESCRIPTIO N • -S.000V Output ±0.3% • Output Adjustment Range of > ± 3% • Excellent Temperature Stability < 3 ppm/°C • Output Sinks and Sources >10 mA

Contextual Info: HE8811 ODE-208-051A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam

HE8811 2008

Abstract: HE8811
Contextual Info: HE8811 ODE2062-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam

Hitachi DSA002726

Contextual Info: HE8811 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments

HE8811

Contextual Info: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam