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    BREAK OVER DIODE Search Results

    BREAK OVER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER
    Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical PDF
    GRM-KIT-OVER100-DE-D
    Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit PDF
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet

    BREAK OVER DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and


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    350mW DO-35 MIL-STD-202, DO-35 PDF

    dg506abr

    Abstract: 5202 GE SL4 diode DS5B
    Contextual Info: SSSSS DG506A/507A 16-Channel and Dual 8-Channel CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS • TTL & CMOS Direct Control Over Military Temperature Range • Easily Interfaced • Reduced Power Consumption • Low Power 30 mW typ. • Break-Before-Make Switching


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    DG506A/507A 16-Channel DG506A/507A 64-Channel dg506abr 5202 GE SL4 diode DS5B PDF

    DG508ACK

    Abstract: DG508AAK DG509ADY iC-MG
    Contextual Info: DG508A/509A 8-Channel/Dual 4-Channel CMOS Analog Multiplexers JETS» FEATURES BENEFITS APPLICATIONS • TTL & CMOS Direct Control Over Military Temperature Range • Low Power 30 mW typ. • Break-Before-Make Switching • 44 V Power Supply Rating • •


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    DG508A/509A DG508A, DG509A, 1N4148 DG508ACK DG508AAK DG509ADY iC-MG PDF

    HI-303-5

    Abstract: HI-303-2 HI1-0303-2 HI1-0303-5 HI-303 HI3-0303-5 HI9P0303-5 HI9P0303-9 MP2B
    Contextual Info: HI-303 Data Sheet August 2002 FN3125.8 Dual, SPDT CMOS Analog Switch Features The HI-303 switch is a monolithic device fabricated using CMOS technology and the Intersil dielectric isolation process. This switch features break-before-make switching, low and nearly constant ON resistance over the full analog


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    HI-303 FN3125 HI-303 HI-303-5 HI-303-2 HI1-0303-2 HI1-0303-5 HI3-0303-5 HI9P0303-5 HI9P0303-9 MP2B PDF

    FU-627SLD-F1M54

    Abstract: F1M54
    Contextual Info: WZ700061B 1/4 MITSUBISHI (OPTICAL DEVICES) FU-627SLD-F1M54 1.55 µm FP-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-627SLD-F1M54 has been developed for coupling a singlemode optical fiber and a 1.55µm wavelength InGaAsP LD (Laser diode).


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    WZ700061B FU-627SLD-F1M54 FU-627SLD-F1M54 F1M54 PDF

    ML520G72

    Abstract: ML5xx72
    Contextual Info: MITSUBISHI LASER DIODES ML5xx72 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G72 DESCRIPTION FEATURES • High Output Power: 500mW CW Mitsubishi ML520G72 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light


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    ML5xx72 ML520G72 500mW ML520G72 500mW. 638nm Duty25% frequency50Hz TLDE-P1074 PDF

    GPT05108

    Contextual Info: SIEMENS 3-A DC Motor Driver TLE 5204 Overview SPT 1C 1> Features • • • • • • • Output current ± 3 A I/O error diagnostics Short-circuit proof Four-quadrant operation Integrated free-wheeling diodes Wide temperature range Break low and break high, if open load detection is


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    Q67000-A9177 P-T0220-7-1 necessa8-02-01 GPT05108 GPT05874 GPT05108 PDF

    FU-627SDF-FW1

    Abstract: FU-627SDF-FV1 laser diode bare chip 1550
    Contextual Info: WZ700025B 1/4 MITSUBISHI (OPTICAL DEVICES) FU-627SDF-Fx1 1.55 µm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-627SDF-Fx1 has been developed for coupling a singlemode optical fiber and a 1.55µm wavelength InGaAsP DFB LD (Laser diode).


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    WZ700025B FU-627SDF-Fx1 FU-627SDF-Fx1 FU-627SDF-FW1 FU-627SDF-FV1 laser diode bare chip 1550 PDF

    FU-427SHL-8M22

    Contextual Info: WZ700062B 1/4 MITSUBISHI (OPTICAL DEVICES) FU-427SHL-8M22 1.31 µm FP-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-427SHL-8M22 has been developed for coupling a singlemode optical fiber and a 1.31µm wavelength InGaAsP LD(Laser diode).


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    WZ700062B FU-427SHL-8M22 FU-427SHL-8M22 PDF

    FU-627SHL-6M22

    Contextual Info: WZ700063B 1/4 MITSUBISHI (OPTICAL DEVICES) FU-627SHL-6M22 1.55 µm FP-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-627SHL-6M22 has been developed for coupling a singlemode optical fiber and a 1.55µm wavelength InGaAsP LD(Laser diode).


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    WZ700063B FU-627SHL-6M22 FU-627SHL-6M22 PDF

    Contextual Info: VCUT0714A-02Z Vishay Semiconductors Bidirectional Asymmetrical BiAs Single Line ESD-Protection Diode in SOD923 Features • Working range - 7 V up to + 14 V or - 14 V up to + 7 V e3 • Low leakage current < 0.1 µA • Low capacitance typ. 8.0 pF • ESD-Immunity > ± 25 kV (acc. IEC 61000-4-2)


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    VCUT0714A-02Z OD923 OD923 VCUT0714A-02Z-GS08 08-Apr-05 PDF

    28V DC supply ring generator

    Abstract: L7581AAE 220v 2a diode bridge ISL5571A ISL5571AIB ISL5571AIBZ TB363 TB379 TISPL758LF3D
    Contextual Info: ISL5571A Data Sheet July 2004 FN4920.5 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.


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    ISL5571A FN4920 ISL5571A L7581AAE CPCL7581A 110mA. 28V DC supply ring generator 220v 2a diode bridge ISL5571AIB ISL5571AIBZ TB363 TB379 TISPL758LF3D PDF

    AL 2450 dv circuit diagram

    Abstract: AL 2450 dv AL 2425 dv AL 2425 dv circuit diagram lm385b12 to-92 AL 2450 dv circuit schematic AL 2450 dv circuit LM385Z LM285D LM385B
    Contextual Info: LM285, LM385B Micropower Voltage Reference Diodes The LM285/LM385 series are micropower two−terminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 mA to 20 mA, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and


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    LM285, LM385B LM285/LM385 LM285/D AL 2450 dv circuit diagram AL 2450 dv AL 2425 dv AL 2425 dv circuit diagram lm385b12 to-92 AL 2450 dv circuit schematic AL 2450 dv circuit LM385Z LM285D LM385B PDF

    220v 2a diode bridge

    Abstract: L7581AAE 28V DC supply ring generator ISL5571A ISL5571AIB TB363 TB379 TISPL758LF3D transistor scr voltage drop circuit from 220V to 10V
    Contextual Info: ISL5571A Data Sheet June 2002 Access High Voltage Switch Features The ISL5571A is a solid state device designed to replace the electromechanical relay used on Subscriber Line Cards. The device contains two Line Break MOSFET switches, one Ring Return MOSFET switch and one Ring Access SCR switch.


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    ISL5571A ISL5571A FN4920 L7581AAE CPCL7581A 110mA. 220v 2a diode bridge 28V DC supply ring generator ISL5571AIB TB363 TB379 TISPL758LF3D transistor scr voltage drop circuit from 220V to 10V PDF

    AT1C

    Contextual Info: DR65-0002 M/A-COM Linear Driver for PIN Diode Attenuators SOW-16 Features • • • • • • • • Linearizes PIN Diode Attenuators Over a W ide Attenuation Range Output Currents up to 12 mA Operates with a Single Supply Voltage of +3V to +12V Low Quiescent Currents


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    DR65-0002 SOW-16 DR65-0002 AT10-0017, AT1C PDF

    Contextual Info: ERICSSON ^ April 1997 PBR 5111/2 L P C Li ne R e s i s t o r N e t w o r k Description The Line Protection Resistor Network LPC PBR 5111/2 consists of a ratio matched pair of thickfilm resistors on a ceramic substrate. PBR 5111/2 is used in telephone line interface overvoltage protection networks, where the LPC resistors limit the


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    1522-PBR S-164 PDF

    VESD03A1C-02Z

    Contextual Info: VESD03A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 46 pF


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    VESD03A1C-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD03A1C-02Z-GS08 11-Mar-11 VESD03A1C-02Z PDF

    Contextual Info: VESD05A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package height = 0.4 mm • Typ. capacitance 38 pF


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    VESD05A1C-02Z OD923 OD923 2002/95/EC 2002/96/EC VESD05A1C-02Z-GS08 11-Mar-11 PDF

    TLP722

    Abstract: TLP722F E67349 VDE0884
    Contextual Info: TLP722 TOSHIBA Photocoupler Photo−Diode TENTATIVE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722: Single circuit • Cathode−anode voltage: 30V (max)


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    TLP722 TLP722 TLP722: 4000Vrms UL1577, E67349 VDE0884 890VPK 8000VPK TLP722F E67349 VDE0884 PDF

    LLP1006-2L

    Abstract: VC2023 1NS14
    Contextual Info: VESD12A1C-HD1 Vishay Semiconductors ESD-Protection Diode in LLP1006-2L Features • • • • • • • • • • • Ultra compact LLP1006-2L package Low package height < 0.4 mm 1-line ESD-protection Low leakage current < 0.01 µA Low load capacitance CD = 12.5 pF


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    VESD12A1C-HD1 LLP1006-2L LLP1006-2L IEC61000-4-5 2002/95/EC 2002/96/EC 11-Mar-11 VC2023 1NS14 PDF

    Contextual Info: b Microelectronics ATTL7581 Ringing-Access Switch Features • Direct pin-for-pin replacement for ATTL7541 ■ Small size/surface-mount packaging ■ Monolithic IC reliability ■ No Impulse noise generation ■ No zero cross switching required ■ Make-before-break, break-before-make operation


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    ATTL7581 ATTL7541 QGSG02b 16-Pin, ATTL7581AAE/BAE) PDF

    schematic WELDER

    Abstract: gold melting furnace ultrasonic bond
    Contextual Info: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each


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    OT-23 schematic WELDER gold melting furnace ultrasonic bond PDF

    marking code DN SOT23

    Abstract: marking code s4r diode s4r diode configuration 8250 uart marking code 10 sot23 marking CODE S2A ROM 5-Lead Plastic SOT-23 TRANSISTOR S2A AN1165 AN1167
    Contextual Info: ISL6296A Data Sheet July 18, 2008 FN6567.1 FlexiHash For Battery Authentication Features The ISL6296A is a highly cost-effective fixed-secret hash engine based on Intersil’s FlexiHash™ technology. The device’s authentication is achieved through a challenge


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    ISL6296A FN6567 ISL6296A 32-Bit marking code DN SOT23 marking code s4r diode s4r diode configuration 8250 uart marking code 10 sot23 marking CODE S2A ROM 5-Lead Plastic SOT-23 TRANSISTOR S2A AN1165 AN1167 PDF

    process flow diagram

    Abstract: marking code X5 SOT23 AN1165 AN1167 ISL6296 ISL9206 ISL9206DHZ-T ISL9206DRZ-T TB363 marking code X4 XE SOT23
    Contextual Info: ISL9206 Data Sheet January 5, 2007 FN9260.2 FlexiHash+ For Battery Authentication Features The ISL9206 is a highly cost-effective fixed-secret hash engine based on Intersil’s second generation FlexiHash™ technology. The device authentication is achieved through a


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    ISL9206 FN9260 ISL9206 32-Bit process flow diagram marking code X5 SOT23 AN1165 AN1167 ISL6296 ISL9206DHZ-T ISL9206DRZ-T TB363 marking code X4 XE SOT23 PDF