BR V 610 Search Results

pc2700r-25330-c0

Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C
Contextual Info: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

GT 32 DIAC

Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

TAG 203 350

Abstract: tag thyristoren tag 665 100 BTX 25 800 TAG 12 665 600 tag 627 800 TAG 600 TAG 203 to48c tag 6 600
Contextual Info: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*

Contextual Info: IRF7304QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

222ll

Abstract: 10LLS
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)

md5000a

Abstract: BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE110 IRFE111 IRFE113 IRFE9120
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued QUAD TMOS FETS rds (ON) Devices (£2) Max VGS (H7) @ ID (A) Min V(BR)DSS IDSS (V) @ VDS Max (V) ID (m A) @ VDS (V) (UA) Max (V) Min @ ID (VA) CISS IGSS (nA) Max @ VGS (V) CRSS ton toff (pf) Max @ VDS (V) (P0 Max

SMP25N05-45L

Abstract: SMP25N05
Contextual Info: T em ic SMP25N05-45L Siliconix N-Channel Enhancement-Mode Ttansistor, Logic Level 175 °C Maximum Junction Temperature Product Summary r DS on (£2) I d (A ) 0.045 @ V GS = 10 V 25 0.060 @ V GS = 4.25 V 25 V(BR)DSS (V) 50 T0-220AB o Drain Connected to Tab

222LL

Abstract: VN10LLS 10LLS VN0605T VN0610LL VN2222LL
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

10LLS

Abstract: VN0610LL 222ll VN10LLs VN2222LL VN0605T week code vishay SILICONIX
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

369D

Abstract: NTD4805N mosfet K 2865
Contextual Info: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS

2SK1178

Abstract: FM20
Contextual Info: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±4.0 A I DSS A VTH 2.0 35 (Tc = 25ºC) W Re (yfs) 2.4 ±16 (Tch ID (pulse) PD 150ºC)

VNDQ09

Abstract: VQ1006 VQ1004
Contextual Info: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4

Contextual Info: ESDA6V1-5T6 Transil arrays for ESD protection Features • 5 unidirectional Transil diodes ■ Breakdown voltage V br = 6.1 V min. ■ Low leakage current < 200 nA ■ Very small PCB area: 1.0 mm2 ■ 350 ^m pitch micro-package ■ Lead-free and RoHS package

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

cb346

Abstract: 1RM150 CB47 RECTIFIER Cb28 1N2911 facon F250HL RM2506 fmu 22 u mk plastique
Contextual Info: LJ5E D FACON • 3MSb203 DDDG027 b « F C N FACONSEMICONDUCTEURS/SEMICONDUCTORS ~T [ - O\ high voltage power rectifiers d io d es haute tension d e fort n iveau d e courant V RRM V F/ 'F •f s m ■r / v r r m V BR R <rr C ase Types (A) (KV) 10 m s m ax

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

Contextual Info: J ffiS S b VP2020L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V yp -2 0 0 20 V (BR)DSS TO-92 (TO-226AA) BOTTOM VIEW •d (A) - 0 .1 2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20 3 1 ABSOLUTE MAXIMUM RATINGS (TA 25°C Unless Otherwise Noted)

VP0610, sot23

Abstract: marking HSs SOT23 TO206AC VP0610T
Contextual Info: SILICONIX INC läE D C X Silico n ix X V • Ö25473S 0014110 □ VP0610 SERIES in c o rp o r a te d P-Channel Enhancement-Mode MOS Transistors T Z I-Z S PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) (Í1 ) (V) VP0610E -6 0 10 TO-92 ■o (A) PACKAGE -0.25

VQ1000

Abstract: VQ1000P
Contextual Info: VQ1000 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays B tSSSA 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1000J 60 VQ1000P •d (A) PACKAGE 5.5 0.225 Plastic 60 5.5 0.225 Sidebraze Performance Curves: VNDS06 'T ,l

dbi 6-16

Contextual Info: DBI 6-005 . DBI 6-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current – Nennstrom 6A Repetitive peak reverse voltage 50…1600 V Periodische Spitzensperrspannung Metal case – Metallgehäuse Dimensions Abmessungen 40 x 20 x 10 [mm]

Contextual Info: DBI 6-005 . DBI 6-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current – Nennstrom 40±0.2 _ Dimensions Abmessungen + 20 50…1600 V Metal case – Metallgehäuse 20±0.2 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung

sd 6109

Abstract: IC SD 6109
Contextual Info: T e m ic SMP40N10 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (£2) I d (A) 100 0.040 40 TO-220AB o •Jt D R A IN c o n n ected to TAB G D S Top View N -C h an n el M O S F E T

VN45350T

Abstract: VND050 VN45350 S2S473S VN45350L v3001 T27-ZS Siliconix sot23 marking
Contextual Info: 1ÔE D SILICONIX INC O 'Silicon ix • Ö2S473S 0014112 T VN45350 SERIES ¡iin c o rp o ra te d N-Channel Enhancem ent-M ode MOS Transistors T-2-7-ZS PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS rDS(ON) (n ) (V) ■d (A) PACKAGE VN45350L 450 350 0.030 TO-92

VQ1001

Contextual Info: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7