BR 9 Search Results

Contextual Info: Mouser Electronics Related Product Links 806-K85X-ED-9S-BR - Kycon K85X-ED-9S-BR

Contextual Info: •Cylindrical Type Lithium Batteries Bare cell BR-C BR-A BR-2/3A BR-2/3A Lithium Battery Model Number Specifications Nominal Voltage V Nominal Capacity(mAh) Tab configuration Page/Fig No. BR-CT2P 3 5,000 Tab (12mm) 4 /No.1 BR-CC7P 3 5,000 Connecter 4 /No.2

DIAC DB3 specifications

Abstract: diac db3 D60 DIAC db3 dl breakback dmmdb4
Contextual Info: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry |V(BR)1|-|V(BR)2| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C

xaar

Contextual Info: SK150GD066T =' S BR TIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PI:9 =U S BR TI <I =U S @YR TI <IZ; SEMITOP 4 IGBT Module .5'( WXX P @R@ J =' S YX TI @B@ J CXX J [ BX P =U S @BR TI W _' =' S BR TI @`a J =' S YX TI @RB J BXX

feature of ic UM 66

Abstract: 1r06 Y447 MPA-600 TSA2 um 66 ic 1R02 borosilicate glass NIST 546nm 1R01
Contextual Info: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC 1050010.14 REV de 38 Jean-François Bédard DATE ACI 1R01 1R02 89/06/01 91/09/19 1R03 1R04 92/03/12 93/02/15 # br-376 # br-375 # br-505 BR-795 1R05 93/04/19 N/A 1R06 10-SE-93 N/A 7 94/07/04 N/A 8 9

Contextual Info: SPLICING GUIDE FOR MIRROR-IMAGE CABLE MIRROR-IMAGE LAY-UP 25 V/S 24 V/BR 23 V/G 22 V/O 12 BK/O 13 BK/G 4 W/BR 3 W/G 10 R/S 9 R/BR 20 Y/S 15 BK/S 5 W/S 1 W/BL 11 BK/BL 21 V/BL 14 BK/BR 2 W/O 6 R/BL 16 Y/BL 7 R/O 17 Y/O 8 R/G 18 Y/G 19 Y/BR 25 PAIR UNIT U-25

Contextual Info: Series ITS ITS 3100 A BR and ITS 4100 A (BR) ITS 3100 R (BR) and ITS 4100 R (BR) ITS ITS ITS Reverse Reverse Bayonet Bayonet Reverse Bayonet Assemblies Assemblies Assemblies Front Panel Mount Square Flange Receptacle Assembly with Backshell for Termination of UNI4883 Rubber Conduits

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

2N3694

Abstract: 2N5219 2N5127 2N5131 2N5132 2N5227 MPS-A05 MPS-A06 MPS-A10 MPS-A20
Contextual Info: Econoline Plastic-Molded Silicon SEPT” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package EBC Pinning D-C C U R R E N T GAIN >- Typ e No. cc < o CL Pd (hFE ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C CBO CEO EBO VcE lc

Contextual Info: SK100GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK100GH12T4T .5'( @BVV P @BX L =' Q WV SK @VV L CVV L [BV P =T Q @RV SK @V _' =' Q BR SK @VB L =' Q WV SK

2N4401 EBC

Abstract: JEDEC 2N3904 TP2222A
Contextual Info: NPN TRANSISTORS TO -92/TO -226AA >3 ‘2N’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO V CE sat 'c V (BR)CBO V (BR)CEO V (BR)EBO Max. Device Max. Type (mA) (V) (V) (V) (nA) @ V cb (V) hFE hFE @ l c @ V CE Max.

450C

Contextual Info: Magnet Material Selection Table Material Magnetic Properties Br - 5,500 - 13,500 Hc - 475 - 1,900 MGOe 1.4 - 10.5 Br - 6,000 - 10,800 Hc - 550 - 1,900 Sintered Alnico MGOe 1.4 - 5.0 Br - 3,450 - 4,100 Ceramic Hard Hci - 3,000 - 4,800 Ferrite MGOe 2.7 - 4.0

2N3609

Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

C 56 ph diode

Abstract: PH 21 DIODE ph-12 diode semikron SKa 6/20
Contextual Info: SK50GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK50GH12T4T .5'( @BVV P WR L =' Q WV SK XV L @RV L [BV P =T Q @RV SK @V _' =' Q BR SK RX L =' Q WV SK

Diode SJ 56

Abstract: diode sj pj+939+diode
Contextual Info: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ

Contextual Info: TO-92/TO-226AA “ 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO DC Current Gain V CE sat *T •c Device Type Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @ v CB hFE hre (mA) (V) (V) (V) (nA) (V) @ lc c»*1 V (V) (mA) (MHz) (mA)

pj 72 diode

Abstract: Diode SJ 12 pj 86 diode Diode SJ
Contextual Info: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ

pj 56 diode

Abstract: semikron 3Y diode PJ diode ph9a
Contextual Info: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ

TP2222A

Contextual Info: TO -92ITO -226A A ‘2N’ and £TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at I A. = 25°C ^CBO DC C urrent Gain v :E{sat 't •c Device Max. Type m A) V (BR)CBO V (BR)CEO V (BR)EBO Max. @ V CB (V) (V) (V) (nA) " f. C ob' v NF' Pinning (V) (mA) (MHz) (m A)

sc 107 transistor

Abstract: NPN TRANSISTOR SC-70 23marking
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC

transmitting triode

Abstract: marconi company marconi
Contextual Info: BR 129/JULY 1954 Triode Type BR 129 HF AMPLIFIER AND OSCILLATOR General. The BR 129 is a forced-air-cooled transmitting triode fitted with a tungsten filament. Cooling. The anode requires forced air cooling. The air cooling and air flow characteristics given show the

marconi company

Abstract: 0437D-A br179 marconi
Contextual Info: BR 179/FEB. 1955 aironi Triode Type BR 179 General. The BR 179 is a forced-air-cooled transmit­ ting triode fitted with a thoriated tungsten filament. Cooling. The anode requires forced air cooling. The air cooling and air flow characteristics given show the

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Lead Pb free product - RoHS compliant * Halogen free product (Cl<900ppm, Br<900ppm; Cl+Br<1500ppm). * Low power consumption. * High efficiency & reliability. * Versatile mounting on p.c. board or panel.

btp 128 550

Abstract: AXP 209 TPSMP6.8A
Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors DO-220AA SMP MAJOR RATINGS AND CHARACTERISTICS V(BR) 6.8 V to 43 V PPPM (for V(BR) 6.8 V) 250 W PPPM (for V(BR) 7.5 V - 12 V)