BR 9 Search Results

Br107

Contextual Info: SPACER FOR LED LAMP BR-A Features ! LED FIRMLY HELD BY SPACER. ! SUITABLE FOR BACK PANEL ILLUMINATION, CIRCUIT BOARD INDICATOR, LED INDICATOR. ! UL RATING : 94V-0. ! HOUSING MATERIAL: TYPE 66 NYLON. Package Dimensions PART NO. BR-4.3 BR-4.83 BR-5.8 BR-5.85

ASTM-B33

Abstract: ASTM-B-33 EIA-468-B
Contextual Info: VESTAL PART NUMBER BR/OS100-22-LSO BR/OS100-22-HSO BR/OS100-22-LDO BR/OS100-22-HDO BR/OS100-24-LSO BR/OS100-24-HSO BR/OS100-24-LDO BR/OS100-24-HDO AWG 22 22 22 22 24 24 24 24 WIRE DIAMETER WD .025" .025" .025" .025" .020" .020" .020" .020" LEAD SPACE C/C

Contextual Info: Mouser Electronics Related Product Links 806-K85X-ED-9S-BR - Kycon K85X-ED-9S-BR

Contextual Info: •Cylindrical Type Lithium Batteries Bare cell BR-C BR-A BR-2/3A BR-2/3A Lithium Battery Model Number Specifications Nominal Voltage V Nominal Capacity(mAh) Tab configuration Page/Fig No. BR-CT2P 3 5,000 Tab (12mm) 4 /No.1 BR-CC7P 3 5,000 Connecter 4 /No.2

DIAC DB3 specifications

Abstract: diac db3 D60 DIAC db3 dl breakback dmmdb4
Contextual Info: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry |V(BR)1|-|V(BR)2| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C

PC21002

Contextual Info: Data Sheet, Rev. 1.4, Jun. 2005 HYS72D64301[G/H]BR–[5/6]–B H YS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR– HYS72D128xxx[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR– HYS72D256320[G/H]BR–[5/6/7]–B [5/6/7]–B

HYS72D128300

Abstract: DDR400 PC3200R-30331-C0 pc2100r 25330 z
Contextual Info: Data Sheet, Rev. 1.2, Dec. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

DIAC 502

Abstract: 502 diac
Contextual Info: DIAC CHIPS BREAKOVER VOLTAGE TYPE BREAKOVER VOLTAGE BREAKOVER CURRENTS SYMMETRY V BR i and V(BR)¡ l(BR), and l(BR)2 [V(BR),] - V(BR)2] VO LTS ß AM P VO LTS CHIP SIZE MIN TYP MAX MAX M AX 30 50= 28 32 36 100 3 40 50* 35 40 45 100 4 60 50! 56 60 70 100 5 SIDAC CHIPS

xaar

Contextual Info: SK150GD066T =' S BR TIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PI:9 =U S BR TI <I =U S @YR TI <IZ; SEMITOP 4 IGBT Module .5'( WXX P @R@ J =' S YX TI @B@ J CXX J [ BX P =U S @BR TI W _' =' S BR TI @`a J =' S YX TI @RB J BXX

feature of ic UM 66

Abstract: 1r06 Y447 MPA-600 TSA2 um 66 ic 1R02 borosilicate glass NIST 546nm 1R01
Contextual Info: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC 1050010.14 REV de 38 Jean-François Bédard DATE ACI 1R01 1R02 89/06/01 91/09/19 1R03 1R04 92/03/12 93/02/15 # br-376 # br-375 # br-505 BR-795 1R05 93/04/19 N/A 1R06 10-SE-93 N/A 7 94/07/04 N/A 8 9

BR508

Contextual Info: SPACER FOR LED LAMP BRA Features LED FIRMLY HELD BY SPACER. SUITABLE FOR BACK PANEL ILLUMINATION, CIRCUIT BOARD INDICATOR, LED INDICATOR. UL RATING : 94V-0. HOUSING MATERIAL: TYPE 66 NYLON. RoHS COMPLIANT. Package Dimensions PART NO. BR-4.3 BR-4.83 BR-5.08

ZTX1151

Contextual Info: ZTX1151A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . VALUE SYMBOL CONDITIONS. TYP. MAX. v (BR)CBO -45 -95 V Ic-IOOpA Collector-Emitter Breakdown Voltage V(BR)CES -40 -90 V lc-100|iA Collector-Emitter Breakdown Voltage V(BR)CEO -40

Contextual Info: SPLICING GUIDE FOR MIRROR-IMAGE CABLE MIRROR-IMAGE LAY-UP 25 V/S 24 V/BR 23 V/G 22 V/O 12 BK/O 13 BK/G 4 W/BR 3 W/G 10 R/S 9 R/BR 20 Y/S 15 BK/S 5 W/S 1 W/BL 11 BK/BL 21 V/BL 14 BK/BR 2 W/O 6 R/BL 16 Y/BL 7 R/O 17 Y/O 8 R/G 18 Y/G 19 Y/BR 25 PAIR UNIT U-25

Contextual Info: Series ITS ITS 3100 A BR and ITS 4100 A (BR) ITS 3100 R (BR) and ITS 4100 R (BR) ITS ITS ITS Reverse Reverse Bayonet Bayonet Reverse Bayonet Assemblies Assemblies Assemblies Front Panel Mount Square Flange Receptacle Assembly with Backshell for Termination of UNI4883 Rubber Conduits

Contextual Info: Anschlussbelegung / PIN assignment T568A nach / according to TIA/EIA 568-C.2 0.69 in. 14,2 17,4 13,9 (0.55 in.) W/G G BR W/BR W/O O BL W/BL Anschlussbelegung / PIN assignment T568B nach / according to TIA/EIA 568-C.2 BR W/BR G BL W/BL (0.54 in.) (2.02 in.)

2N3694

Abstract: 2N5219 2N5127 2N5131 2N5132 2N5227 MPS-A05 MPS-A06 MPS-A10 MPS-A20
Contextual Info: Econoline Plastic-Molded Silicon SEPT” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package EBC Pinning D-C C U R R E N T GAIN >- Typ e No. cc < o CL Pd (hFE ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C CBO CEO EBO VcE lc

Contextual Info: SK100GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK100GH12T4T .5'( @BVV P @BX L =' Q WV SK @VV L CVV L [BV P =T Q @RV SK @V _' =' Q BR SK @VB L =' Q WV SK

BCW91B

Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)

2N4401 EBC

Abstract: JEDEC 2N3904 TP2222A
Contextual Info: NPN TRANSISTORS TO -92/TO -226AA >3 ‘2N’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO V CE sat 'c V (BR)CBO V (BR)CEO V (BR)EBO Max. Device Max. Type (mA) (V) (V) (V) (nA) @ V cb (V) hFE hFE @ l c @ V CE Max.

450C

Contextual Info: Magnet Material Selection Table Material Magnetic Properties Br - 5,500 - 13,500 Hc - 475 - 1,900 MGOe 1.4 - 10.5 Br - 6,000 - 10,800 Hc - 550 - 1,900 Sintered Alnico MGOe 1.4 - 5.0 Br - 3,450 - 4,100 Ceramic Hard Hci - 3,000 - 4,800 Ferrite MGOe 2.7 - 4.0

2N3609

Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

C 56 ph diode

Abstract: PH 21 DIODE ph-12 diode semikron SKa 6/20
Contextual Info: SK50GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK50GH12T4T .5'( @BVV P WR L =' Q WV SK XV L @RV L [BV P =T Q @RV SK @V _' =' Q BR SK RX L =' Q WV SK

pc2100r 25330 z

Abstract: cmos 4070 pc2700r-25330-c0 32 h 380 a 63 DDR400 DDR400B HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320
Contextual Info: March 2007 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Internet Data Sheet Rev. 1.32 Internet Data Sheet

IN6284

Abstract: IN6282 IN647 2190 ctv IN6286A
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473