BR 8550 C Search Results

BR 8550

Abstract: br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550

Abstract: br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st8550d

Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550

Abstract: 8550 sot-23 8550 sot-23 pnp MMBT8550D br 8550 NPN Transistor MMBT8050D ST MMBT8550C 8550 NPN Transistor 8550 TRANSISTOR 8550
Contextual Info: MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value

BR 8550

Abstract: 8550 transistor 8550 pnp transistor common collector PNP br 8550 c BR 8550 transistor 8550 8550 pnp BR 8550 ic
Contextual Info: MMBT8550W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 25 V Collector Base Voltage -VCBO 40 V Emitter Base Voltage -VEBO 6

BR 8550

Abstract: PNP transistor 8550 BR 8550 ic ic 8550 PNP 8550 ST 8550 8550 pnp MMBT8550W 8550 pnp transistor c 8550 transistor
Contextual Info: MMBT8550W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 25 V Collector Base Voltage -VCBO 40 V Emitter Base Voltage -VEBO 6

8550D transistor

Abstract: br 8550 NPN Transistor BR 8550 D 8550C 8550D BR 8550D BR 8550 BR 8050 BR 8050 D 8550 NPN Transistor
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550D

Abstract: BR 8550 D 8550c 8550D transistor br 8550 NPN Transistor BR 8550D 8550 NPN Transistor 8550 pnp he 8550d BR 8050
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550c

Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

BR 8550D

Abstract: 8550D transistor 8550C transistor 8550D 8550D br 8550c NPN Transistor transistor 8550D PNP br 8550 NPN Transistor NPN transistor 8550d BR 8050
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550D transistor

Abstract: BR 8550D BR 8050 BR 8550 D 8550D 8550c st 8550d transistor 8050 d npn 8050 br 8550 NPN Transistor
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

BR 8550

Abstract: BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector

BR 8050 D

Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

Contextual Info: BAS19-BAS21 msnrn ▼ Vishay Telefunken Surface Mount Switching Diode Features • Silicon planar epitaxial high speed diode • For sw itching and general purpose applications 94 8550 Absolute Maximum Ratings Tj = 2 5 °C P aram eter Test C onditions W orking peak reverse voltage

st 8050d

Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550

Abstract: BR 8550 D BAS40 bas40-05 vishay
Contextual Info: BAS40/–04/–05/–06 Vishay Telefunken Surface Mount Schottky Barrier Diodes Features D Low Turn–on Voltage D Fast Switching D PN Junction Guard Ring for Transient and ESD Protection Applications 94 8550 Fast switches in thick and thin film circuits Absolute Maximum Ratings

BAS70

Contextual Info: BAS70/–04/–05/–06 Vishay Telefunken Surface Mount Schottky Barrier Diodes Features D Low Turn–on Voltage D Fast Switching D PN Junction Guard Ring for Transient and ESD Protection Applications 94 8550 Fast switches in thick and thin film circuits Absolute Maximum Ratings

Contextual Info: BAT54/A/C/S Vishay Telefunken Small Signal Schottky Barrier Diode Features D Low Turn–on Voltage D Fast Switching D PN Junction Guard Ring for Transient and ESD Protection 94 8550 Order Instruction Type BAT54 BAT54A BAT54C BAT54S Type Differentiation VR = 30 V, Single Diode

L05 SMD diode

Abstract: L05 SMD TEMD "BR 8550"D TEMD2100
Contextual Info: TELEFUNKEN Semiconductors TEMD 2100 Silicon PIN Photodiode Description TEMD2100 is a high speed silicon PIN photodiode in a miniature SOT–23 package for surface mounting on printed boards. Its flat package provides an extra wide viewing angle. Due to its waterclear epoxy the device is

Contextual Info: BAS19–BAS21 Vishay Telefunken Switching Diodes Features D Silicon planar epitaxial high speed diode D For switching and general purpose applications 94 8550 Order Instruction Type BAS19 BAS20 BAS21 Type Differentiation VRRM = 120 V VRRM = 200 V VRRM = 250 V

Contextual Info: vtS H Â Y ▼ _BAT54/A/C/S Vishay Telefunken Surface Mount Schottky Barrier Diodes Features • L o w T u rn -o n V o lta g e • F a st S w itc h in g • PN J u n c tio n G u a rd R ing fo r T ra n s ie n t a n d ESD P ro te ctio n

TEMD2100

Abstract: L05 SMD diode BR 8550 D
Contextual Info: TEMD2100 Silicon PIN Photodiode Description TEMD2100 is a high speed silicon PIN photodiode in a miniature SOT–23 package for surface mounting on printed boards. Its flat package provides an extra wide viewing angle. Due to its waterclear epoxy the device is sensitive to

8309

Abstract: br 8550 NPN Transistor 8239 BR 8550
Contextual Info: TEMT2200 Silicon NPN Phototransistor Description TEMT2200 is a high speed silicon NPN epitaxial planar phototransistor in miniature SOT–23 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.