BR 8505 Search Results

7804 voltage regulator

Abstract: 7804 regulator voltage regulator 7804 OF 7805 ads8505 7805 fixed positive voltage regulator
Contextual Info: BurrĆBrown Products from Texas Instruments ADS8505 SLAS180 – SEPTEMBER 2005 16-BIT 250-KSPS SAMPLING CMOS ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • 250-kHz Sampling Rate Standard ±10-V Input Range

BR 9014

Abstract: DP1211 wirless circuit transceiver dp1211 transistor c915 9014 transistor specification BR 9014 C data sheet transistor 9014 c V2 rf based home automation SX1211
Contextual Info: DP1211 868/915/950 MHz RF Modules WIRELESS PRODUCTS DP1211 – C868/C915/C950 868, 915 and 950 MHz Drop-In RF Transceiver Modules Combine Small Form Factor with High Performance GENERAL DESCRIPTION KEY PRODUCT FEATURES The DP1211 is a low cost transceiver operating in the

DPS1211

Abstract: wirless circuit transceiver 868 915
Contextual Info: DPS1211 868/915/950 MHz RF Modules WIRELESS PRODUCTS DPS1211 – C868/C915/C950 868, 915 and 950 MHz Drop-In RF Transceiver Modules Combine Small Form Factor with High Performance GENERAL DESCRIPTION KEY PRODUCT FEATURES The DPS1211 is a low cost transceiver operating in the

data sheet transistor 9014 c V2

Abstract: BR 9014 DP1211 BR 9014 C BR 9014 transistor PN-15 868 MHz transceiver spi 9014 transistor specification DP1211-C868 transceiver 868 915
Contextual Info: DP1211 868/915/950 MHz RF Modules WIRLESS PRODUCTS DP1211 – C868/C915/C950 868, 915 and 950 MHz Drop-In RF Transceiver Modules Combine Small Form Factor with High Performance GENERAL DESCRIPTION KEY PRODUCT FEATURES The DP1211 is a low cost transceiver operating in the

S888T

Contextual Info: S888T Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in low voltage UHF- and VHF- tuner with olny 5 V supply voltage and in cordless phones.

RF MODULE 868Mhz, fsk

Abstract: DPS1211 transceiver 868 915 c950
Contextual Info: DPS1211 868/915/950 MHz RF Modules WIRELESS PRODUCTS DPS1211 – C868/C915/C950 868, 915 and 950 MHz Drop-In RF Transceiver Modules Combine Small Form Factor with High Performance GENERAL DESCRIPTION KEY PRODUCT FEATURES The DPS1211 is a low cost transceiver operating in the

Contextual Info: S888T v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages in low voltage U H F -a n d V H F- tu n e r w ith olny 5 V supply voltage and in cordless phones.

TPCP8505

Abstract: BR 8505
Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

toshiba ta 8505

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

TPCP8505

Contextual Info: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)

J1050

Contextual Info: S849T/S849TR Vishay Telefunken MOSMIC for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF-and

w13 smd transistor

Abstract: S913T S913TR S913TRW
Contextual Info: S913T/S913TR/S913TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

smd marking AAAA

Abstract: S849T S849TR
Contextual Info: S849T/S849TR Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF-and

w13 smd transistor

Abstract: w13 smd tuner SOT343R S913T S913TR S913TRW w13 SMD smd transistor marking j5
Contextual Info: S913T/S913TR/S913TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

S886T

Abstract: S886TR J05300 transistor smd 747
Contextual Info: S886T/S886TR Vishay Telefunken MOSMIC for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF-and

S913

Abstract: S913T S913TR S913TRW w13 smd transistor
Contextual Info: S913T/S913TR/S913TRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

S849T

Abstract: S849TR SMD TRANSISTOR MARKING 259
Contextual Info: S849T/S849TR Vishay Telefunken MOSMIC for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF-and

Contextual Info: S849T / S849TR Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

w13 smd transistor

Contextual Info: S913T / S913TR / S913TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage 2 1 Comment SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor 982 sot143

Contextual Info: S886T / S886TR Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor sot 4404

Abstract: J51-20
Contextual Info: S849T / S849TR VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • Integrated gate protection diodes Low noise figure

S886T

Abstract: S886TR
Contextual Info: S886T/S886TR Vishay Telefunken MOSMIC for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF-and