BR 101 Search Results

PC21002

Contextual Info: Data Sheet, Rev. 1.4, Jun. 2005 HYS72D64301[G/H]BR–[5/6]–B H YS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR– HYS72D128xxx[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR– HYS72D256320[G/H]BR–[5/6/7]–B [5/6/7]–B

HYS72D128300

Abstract: DDR400 PC3200R-30331-C0 pc2100r 25330 z
Contextual Info: Data Sheet, Rev. 1.2, Dec. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

PC3200R-30331-C0

Contextual Info: Data Sheet, Rev. 1.1, Sep. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

BYV42-200

Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
Contextual Info: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400

pc2100r 25330 z

Abstract: cmos 4070 pc2700r-25330-c0 32 h 380 a 63 DDR400 DDR400B HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320
Contextual Info: March 2007 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Internet Data Sheet Rev. 1.32 Internet Data Sheet

IN6284

Abstract: IN6282 IN647 2190 ctv IN6286A
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473

feature of ic UM 66

Abstract: 1r06 Y447 MPA-600 TSA2 um 66 ic 1R02 borosilicate glass NIST 546nm 1R01
Contextual Info: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC 1050010.14 REV de 38 Jean-François Bédard DATE ACI 1R01 1R02 89/06/01 91/09/19 1R03 1R04 92/03/12 93/02/15 # br-376 # br-375 # br-505 BR-795 1R05 93/04/19 N/A 1R06 10-SE-93 N/A 7 94/07/04 N/A 8 9

pc2700r-25330-c0

Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C
Contextual Info: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Transient Voltage Suppressors sa series 500 Watt Peak Power Rating/DO-15 TYPE Vwm NUMBER It V br @ It MAX MAX b@ vc @ Ipp a v br TYPE V WM NUMBER MAX MAX Id @ VwM vc @ mADC |jA DC h V BR @ IT Ipp a v br V A mV/°C Ipp V WM Ipp mADC pA DC V A mV/°C See Notes

IEC 60603-7-51

Contextual Info: 24 Tol. <500 ≥500 10 20 >1500 25 >5000 40 >8000 60 >15000 100 200 Paar 2 pair 2 W-O 1 O 2 3 3 Paar 1 pair 1 4 W-BL 5 G 6 W-BR 7 4 Paar 4 pair 4 BL BR 5 6 7 S >50000 >100000 300 500 Paar 3 pair 3 G W-O W-BR Paar 4 pair 4 BR Paar 2 pair 2 O BL Paar 1 pair 1

Contextual Info: K B P C / BR 1005 / 305 THRU KBPC / BR SEMICONDUCTOR 110 tech n ica l data FORWARD INTERNATIONAL ELECTRONICS LTD. / 310 TECHN/CAL SPEC/HCAT70NS O F S/NGLE-PHASE S/L/CON BR/DGE RECT/F/ER VOLTAGE RANGE 50 to 1000 Volts CURRENT - 3.0 Amperes - FEATURES * Surge overfoa rating: 50 Amperes peak

MIL-STD-34B

Contextual Info: PART NUMBER 131-3701-501 131-3701-502 131-3701-505 IT E M BODY BR A SS COLD PL .00001 MIN OVER NICKEL PL .DD005 MIN OVER COPPER PL .00005 MIN BR A SS COLD PL .00001 MIN OVER NICKEL PL .DD005 MIN OVER COPPER PL .00005 MIN BR A SS NICKEL PL .DDQ1 MIN OVER

PC3200R-30331-C0

Abstract: HYS72D128300GBR-5-B HYS72D256220GBR-5-B PC2700R-25330-D0 HYS72D128300HBR-6-B pc2100r 25330 z DDR400 DDR400B HYS72D64301 pc2700r-25330-c0
Contextual Info: January 2007 HYS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256320[G/H]BR–[5/6/7]–B 1 8 4 - P i n R e g i s t e r e d D o u bl e - D a t a - R a t e S D R A M M o d u l e DDR SDRAM RoHS Compliant Products

Contextual Info: APT50-101DN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)22.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)90 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)295 Minimum Operating Temp (øC)

Contextual Info: APT40-101DN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)295 Minimum Operating Temp (øC)

Contextual Info: APT80-101DN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)12.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)50 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)295 Minimum Operating Temp (øC)

Contextual Info: 1582-1010 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1582-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: KBPC BR 1005 305 THRU KBPC BR 110 310 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES * Surge overloa rating: 50 Amperes peak * Low forward voltage drop

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Lead Pb free product – RoHS compliant. * Halogen free product (Cl<900ppm, Br<900ppm; Cl+Br<1500ppm). * High Intensity. * Selected minimum intensities. * Wide viewing angle. * General purpose leads.

Contextual Info: 1763-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)25 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1401-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)250 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 101M Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.