BPX90 F Search Results

A950 O

Abstract: BPX90 F
Contextual Info: SIEMENS BPX 90 BPX 90F DAYLIGHT FILTER Silicon Planar Photodiode BPX 90 FEATURES • Especially suitable for applications - BPX 90:400nm to 1100 nm - BPX90 F: 950 nm • High photosensitivity • DIL plastic package with high packing den­ sity APPLICATIONS

BPX90S

Contextual Info: SIEMENS BPX90 BPX 90F DAYLIGHT FILTER SILICON PLANAR PHOTODIODE Package Dimensions in Inches mm .2 1 2 ( 5 .4 ) - Chip position ¡4 - / . m FEATURES Photosensitive /~ a re a 069 x 124 (1.75 x3 .1 5 ) . 051 (1.3) ! ! ! I • Silicon Planar Photodiode * Package

Contextual Info: SIEMENS AK TIE NGESELLSC HAF • 47E D SIEM EN S ñ23SbOS 0057M40 1 ■ SIEG BPX90 WITH DAYLIGHT FILTER BPX 90K PLANAR SILICON PHOTODIODE Package Dimensions in Inches mm rr?! L i Radiant Sensitive Area 065 X 120 |1 65 X 3 05) Characteristics (Tamb = 25°C)

s452

Abstract: BPX90 BPX90K SX050
Contextual Info: SIEMENS AKTIENGESELLSCHAF SIEM ENS 47E D • ñ23SbOS 0 0 5 7 M 4 G 1 ■ SIE G BPX90 WITH DAYLIGHT FILTER BPX 90K PLANAR SILICON PHOTODIODE Package D im ensions in Inches mm Radiant Sensitive Area 065 X 120 |1 65 X 3 05) Characteristics (Tarnb = 25°C)

Contextual Info: BPX 90 BPX 90F SIEMENS DAYLIGHT FILTER Silicon Planar Photodiode D im ensions in inch e s m m .212(5.4) .193(4,9) 177 (4.5) .090(2.3) 07912.(5) C hip position .024 (.6) .016 (.4) FEATURES • Especially suitable for applications - BPX 90: 400nm to 1100 nm

PX90F

Contextual Info: SIEM ENS Silizium-Fotodiode Silicon Photodiode BPX 90 BPX 90 F 5 .4 4 .9 p - 2 .3 c D ]^ r H 4 .5 2.0 .U P 00 to ! 001 ii m K-j 0.6 0.6 c n iIc d i CNjl^ m o 0 .4 0 .5 0 .3 5 . 0 .5 Ô.î" 0.20 , nD 5 .0 8 m m s p a c in g P h o to s e n s itiv e A re a

SFH2030F

Abstract: SFH505A KOM2033A SFH2030 ha1900 SFH-2030F SFH200 SFH203
Contextual Info: Photodiodes Part Number Package Outline SFH205 SFH206 Package Type Plastic. daylight filter, solder tabs Plastic. dayligh t filter. solder tabs Dark Cur­ rent Half Angl« VB» 1 0V nA Photo­ sensitivity JUB50 mn 0.5mW/ cm2 nA Radiant Senat ive Area mm* Peak

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP