BPW 20 K Search Results

Contextual Info: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 BPW 34 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density

Contextual Info: 2014-01-09 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 S BPW 34 S Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density

Contextual Info: 2014-01-09 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 SR BPW 34 SR Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density

bpw uv photodiode

Abstract: BPW20 BPW20R
Contextual Info: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

PHOTOVOLTAIC CELL

Abstract: "PHOTOVOLTAIC CELL" bpw20 photovoltaic cell sensor photovoltaic sensor BPW 10 nf fotodiode 74138 DIN5033 0175A1
Contextual Info: BPW 20 'W Silizium-PN-Planar-Fotoelement/Fotodiode Silicon PN Planar Photovoltaic Cell/Photodiode Anwendung: Sensor für die Lichtmeßtechnik Application: Sensor for light m easuring purposes Besondere Merkmale: Features: • Für Fotodioden- und Fotoelem ent-Betrieb

GEOY6643

Abstract: Q62702-P76 PA 0016 pa 0016 equivalent
Contextual Info: Silizium-Fotodiode Silicon Photodiode BPW 33 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm typ. 20 pA • DIL-Plastikbauform mit hoher Packungsdichte • Especially suitable for applications from

GEO06643

Abstract: Q62702-P76 BPW33 IR 33 S7535
Contextual Info: Silizium-Fotodiode Silicon Photodiode BPW 33 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm typ. 20 pA • DIL-Plastikbauform mit hoher Packungsdichte Features • Especially suitable for applications from

Contextual Info: 2014-01-09 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BPW 34 FSR Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns

Contextual Info: 2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 FSR Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns

Contextual Info: 2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 FS Features: Besondere Merkmale: • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time typ. 20 ns

Q62702-P1602

Abstract: S8050
Contextual Info: BPW 34 S feo06862 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns

p945

Abstract: transistor P945 GEOY6863 p945 transistor GEOY6643 Q62702-P945 BPW34BS
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns

BPW 64 photo

Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Contextual Info: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package

p945

Abstract: p945 transistor transistor P945 GEOY6643 Q62702-P945
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns

GEO06643

Abstract: Q62702-P945
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns • DIL-Plastikbauform mit hoher Packungsdichte

BPW14A

Abstract: BPW14 BPW14C BPW13 FLU10 BPW13A bpw14b BPW 14 A 06 t127 BPW13C
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl'tëOG'îb 00QÔ370 7 IAL6<S BPW 13 • BPW 14 TÏÏEU IFM IM iK I electronic Ovahvt Yfchnotogm Silicon NPN Epitaxial Planar Phototransistors Applications: Detector In electronic control and drive circuits Features: • Hermetically sealed case

Contextual Info: BIAS 1 Watt Power Supply BPW 1 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 1-08-00, -08-33, -08-50 BPW 1-14-00, -14-33, -14-50 The BPS Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building/home and power

Q62702-P1790

Abstract: E9087 Q62702-P1602 Q62702-P73 BPW34S
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S E9087 BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

bpw 104

Abstract: C 34 f
Contextual Info: Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing Lead Pb Free Product - RoHS Compliant BPW 34 F, BPW 34 FS, BPW 34 FS (R18R) BPW 34 F BPW 34 FS BPW 34 FS (R18R)

siemens 30 090

Contextual Info: SIEMENS Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 7771— Ip ] Approx. BPW 34 BPW 34 S Photosensitive area 2.65 mm x 2.65 mm weight 0.1 g geoo6643 1 .1 i Chip posit O i r i .9 Ò .0 .1 CO I r f ’ «Ni-'-: i t n hf 6.7 R O

BPW34S

Abstract: E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050
Contextual Info: feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing

BPW 40 pin connection in circuit

Contextual Info: BIAS 2 Watt Power Supply BPW 2 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 2-08-00, -08-33, -08-50 BPW 2-14-00, -14-33, -14-50 The BPW Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building and power

Phototransistor L14F

Abstract: L14F L14G3 phototransistor
Contextual Info: eq OPTOELECTRONICS HERMETIC SILICON INFRARED PHOTOSENSORS B V „ ,; R fic e p t io h Metal Can Convex Lens Pi« r * N u rrt t.» c î ¡ . 2 i» €. n i s 1 t i W! k ; it»« t"-, 'C E P ^ C Ì !• ;>r. |J/?S 1 i'iin nAl'jV! •t í a * Note:. P hototransistor

BPW 64 photo

Abstract: PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033
Contextual Info: Silizium-Foto-PIN-Diode Silicon Photo PIN Diode Anwendung: Ultra-schneller Foto-Detektor Application: Ultra high speed photo-detector Besondere Merkmale: Features: • Kurze Ansprechzeiten bei kleinen Spannungen • Fast response times at low operating voltages