BM 109 Search Results

ic 8155 microcontroller

Abstract: ic 8155 block diagram
Contextual Info: Tem ic TELEFUNKEN Semiconductors One Chip Telephone Circuit U 3750 BM Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the

2SC1730

Abstract: 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 2SC1654 2SC1655
Contextual Info: - 108 - Ta=25sC, *EPÎïTc=25‘ C *± 2SC1653 2SC1654 £ BM BM BW. m 1% VcBO Vc e o Ic(DC) Pc (V) (V) (A) (W) Pci (W) fs. m hF E I.CBO, (max) V'c b (V) (Uh) (min) (Ta-25T!) w t ( (max) ic/ÎE (A) VCE (V) [*EPiÎtyp{g] VcE(sat <,max) (V) (V) le (A) 1e (A)

Contextual Info: 2009.10.21 14:20 페이지108 001 refine-4도 2540DPI 175LPI T MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS BK BM For Ballast, High Temperature Series Long Life Item Item Characteristics Operating temperature range

GD-30

Abstract: InGaAs HEMT mitsubishi
Contextual Info: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

38.9MHz SAW FILTER

Abstract: n 38.9MHz SAW FILTER LA7567B LA7567N 3067B LA7567BM AGC-17 71005 60992 TSF1241
Contextual Info: 注文コード No. N 6 0 9 9 A 半導体ニューズ No.N6099 とさしかえてください。 LA7567B/BM モノリシックリニア集積回路 TV・VTR用PAL/NTSCマルチサウンド対応 VIF/SIF IF信号処理回路 概要 LA7567B/BMはセミ無調整方式を採用したPAL/NTSCマルチサウンド対応のVIF/SIF ICである。

U3750BM

Abstract: telefunken em 800 ic 8155 block diagram
Contextual Info: U3750BM TELEFUNKEN Semiconductors One Chip Telephone Circuit Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the tone ringer, the

intel 8052

Abstract: DS80C320 user manual 80C52 analog device Midas turbo 80C52 C0EX
Contextual Info: MiDAS Family BM-MiDAS2.0-V1.4 Brief Manual of MiDAS2.0 Family FLASH / ISP / IAP 8-bit Turbo Microcontrollers V1.4 November 2005 www.keccorp.com Contents 1. Product Overview 2. Features 3. Block Diagram 4. Pin Configurations 5. Pin Descriptions 6. Function Descriptions

U3750BM

Abstract: IC 1458 keyboard ic nc 1458 p1 One-chip telephone IC power protection using dtmf principle ic 8155 block diagram
Contextual Info: U3750BM TELEFUNKEN Semiconductors One Chip Telephone Circuit Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the tone ringer, the

Contextual Info: Dec./2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

BCM 4335

Abstract: BCM 2835 BCM 6302
Contextual Info: .v - m Bm CONNECTOR DIM ENSIONS 3S&r340,341,342,346,391,392,395,745 Series Card Edge Connectors D IM E N S IO N SERIES Number of Contacts Single Dual 325 340 341,391 342,392 345,395 325 341,391 345,395 340 342,392 Inch mm inch (mm) Inch (mm) Inch (mm)

Contextual Info: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH2S64DKD -7,-8A,-8,-10 _ 134217728-BIT 2097152-WORD BY 64-Bm SvnchronousDR AM DESCRIPTION The MH2S64DKD is 2097152-word by 64-bit

Contextual Info: Sharma Aluminum Electrolytic Capacitors Quick Reference Series General Purpose Features GR 85'C, 2000hrs SM 105'C, 2000hrs BM 105'C, 2000hrs, Shorter profile for SM Long Life 105'C, 2000~5000hrs Long life FM Low Profile 85'C, 1000hrs, Miniature for 7mm/9mm height

IC 7217 Unit COUNTER

Abstract: 7217e
Contextual Info: Te m ic TELEFUNKEN Semiconductors U3750BM One Chip Telephone Circuit Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the tone ringer, the

Contextual Info: /^EROFLEX An ARX Com pany Features • Dual redundant rem ote term inal RT , Bus Controller (BC) and Bus Monitor (BM) in one unit ■ Low Power CMOS chip set ■ Extensive error checking ■ Continuous self-test ■ Wrap around data verification while transm itting

ntp 3100

Abstract: U3750BM ic 8155 block diagram
Contextual Info: xEMIC TELEFUNKEN Semiconductors One Chip Telephone Circuit Description TELEFU N K EN m icroelectronic’s one chip telephone circuit, U 3750 BM, is BICM OS integrated circuit that performs all the speech and line interface functions re­ quired in an electronic telephone set, the tone ringer, the

Contextual Info: 0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0 Bm Typical P1 dB at 4 GHz • High Gain: 12.5 dB Typical G1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic

P4N20

Abstract: ADT8A
Contextual Info: P r BM NARY INFORMATION PM09610S1 Æ lY I^ - PMC-Sierra, inc. BSUE2 PM3350 ELAN 8x10 BPOffflOIMmSEIHBW ETSW rrCH PM3350 ELAN 8x10 8 PORT ETHERNET SWITCH Preliminary Information Issue 2: July 1997 PMC-Sierra, Inc. 105 - 8555 B axter Place Burnaby, BC Canada V 5 A 4 V 7 6 0 4 .415.6000

6096453

Abstract: 609-2453 T3412 609-1053 60924
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST GP 00 LTR 01 DESCRIPTION DATE DWN BM CR 3 0JA N 07 REVISED PER E C O - 0 7- 001862 APVD A MATERIAL: HOUSING AND COVER: GLASS-REINFORCED POLYESTER,

A0937

Abstract: A03X ic1707b LC321667BJ LC321667BM LC321667BT 56X16 bt 135 LC321667 101AJ
Contextual Info: I Ordering number : EN 5083 CMOS LSI LC321667BJ, BM, BT-70/80 No.3K5083 SAXYO 1 MEG 65536 words x 16 bits DRAM EDO Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321667B series is a CMOS dynam ic RAM operating on a single 5 V power source and having a

ATF-25735

Contextual Info: 0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1 dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic

PM75RSK060

Abstract: 2223z
Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM75RSK060 FLAT-BASE TYPE INSULATED PACKAGE B D VUPC UFO UP VUPI VVPC VFO VP VVPI VWPC WFO WP VWPI VNC 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. P VNI BM UN VN WN FO P BR

Contextual Info: s e m ik r o n Fast Recovery Rectifier Diodes If bm s maximum values for continuous operation V rsm V rrm 260 A Ifav (sin. 180; Tease = 85 °C) 1000 1200 168 A trr = 500 ns trr = 800 ns $ V 800 160 A SKN SKN SKN SKN SKN SKN 135 136 135 136 135 136 $ SKR

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ DIST R E VIS IO N S 16 LTR DESCRIPTION AU .5 1 6 REF .531 2 16 .328 APVD 03JA N 05 BM JL .3 1 2 I .572 DWN REF D V IE W

PM75RSK060

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM75RSK060 FLAT-BASE TYPE INSULATED PACKAGE B D 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. VUPC UFO UP VUPI VVPC VFO VP VVPI VWPC WFO WP VWPI VNC 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. P VNI BM UN VN WN FO P BR