BLY 55 Search Results

BLY53

Abstract: C1212 transistor BLY-53 "vhf,uhf transistor" C1212 bly power transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BLY-53/C12-12 Silicon NPN power VHF/UHF transistor BLY-53/C12-12 is designed for large signal amplifier and multiplier applications in portable and land mobile FM and AM equipment. Output Power: Frequency Range: Voltage: Package Type:

siemens ETD44

Abstract: ETD 41 etd 35 B66358G1000X167 367 al B66364-A1016-T1 CORE N27 ETD44 ETD 34 24 V B66361G1000X167 B66367-G-X167
Contextual Info: ETD Cores Example of an assem bly set Yoke Core Coil former M ounting dim ensions of the assem bly set mm Core type Length x width x height Special features ETD 29 35,5 x 35,5 x 25,5 24,0 x 35,5 x 41,2 Coil former with horizontal magnetic axis Coil former with vertical magnetic axis

SSH-RTF1090

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSI —LXH 1 0 9 0 S Y D 1 2 75 CAUTION: PR ESSU R E SENSITIVE ASSEM BLY AVOID APPLYING PR ESSU R E TO LED DURING PANEL ASSEM BLY. REV. 013,00 [0 0 ,5 1 2 ] A E.C.N. A NUMBER AND REVISION COMMENTS DATE 2 .9 .0 4 E.C.N. #1 1092.

J-2100

Abstract: B65714-A2000 siemens 250 87-Pm
Contextual Info: PM Cores Example o f an assem bly set Brass clamping yoke - Core Aluminum base plate •Washers ■Nuts M ounting dim ensions of the assem bly set mm Core type Length x width * height y> Core type PM 50/39 65 > 52 x 45 PM 87/70 101 x 87 x 72 PM 62/49 76

Contextual Info: MICRO jaUALITY / S E M IC O N D U C T O R , INC. Fast Recovery High Voltage Power Rectifier Subassembly Diode H850 Th e H 8 5 0 subassem bly diode is designed for use in the buildup of high voltage power rectifier assem blies. Total assem bly cost is greatly reduced by the use of diodes with

334Z

Abstract: C 104z 103z
Contextual Info: REV. UNL£SS OTHERWISE NOTED U TA BLE 1 DIMENSIONS ARE IN INCHES B O D Y S P E C IF IC A T IO N S USE SUB-ASSEM BLY WHEN AVAILABLE DO NOT USE SUB-ASSEM BLY ON LEAD STYLE - W OR -Z W AND - L OPTION SE RIES PO S SBC-XXX ” A ” 12 -3 1 4 1.295» ASM, ONE PLACE DECIMALS ±

BLY 51

Abstract: bly 2 10
Contextual Info: 2.00 A High-precision female headers soldering technique for  0.5 mm and up to 0.56 mm Ø art. no. n x 2,0 B A 7,4 2 4,2 2,2 3,8 2 C Ø 0,5 BLY 1 . art. no. A n/2 x 2,0 7,4 2,2 Ø 0,5 A E n x 2,0 5,6 4,2 A 2 2,2 2 A 1,45 F Ø 0,5 Ø 0,9 3,3 BLY 4 . please indicate:

MP600-D

Contextual Info: lity and bly costs are achieved through full or of selectively Iftd formed . . . . . . . . contacts rio'connector wastage. Hlw contact performance to g s- Budget for Commercial and Standard forMcltisJrial applications. epts wire sizes of $&AWG - offers •ity.

Contextual Info: ZXT10N20DE6 SuperSOT 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUM M ARY V CEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex m atrix structure com bined w ith advanced assem bly techniques to give

Monopulse

Contextual Info: M iniaturized M illim eter Wave Monopulse Com parator Feed Assem bly Features I Deep Null Depth > 30 dB I High Efficiency > 55% I Excellent Performance I Small Size I Light Weight I Planar Waveguide D escription Applications Alpha’s miniaturized millimeter wave monopulse

ior e78996

Abstract: IRFK3D450 e78996 india IRFK3F450
Contextual Info: Bulletin E27100 International Iiqr IRectifier IRFK3D450,IRFK3F450 Isolated Base Power HEX-pak Assem bly - Half Bridge Configuration • • • ■ High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

Contextual Info: F-206-1 Te c IDC D-SUB ASSEM BLY DCMD, DCSD SERIES SPECIFICATIONS For complete specifications see www.samtec.com?DCSD or www.samtec.com? DCMD Insulator Material: High Temperature Thermoplastic Contact Material: Phospher Bronze Shell Material: Steel Shell Plating:

FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER

Abstract: SBR05 SBR10 SDA276A SDA276B SDA276C SDA276D SDA276E SDA276F SDA276G
Contextual Info: SDA276 Xboogtf' bridge rectifier assem bly * PIV 50 TO 1000 VOLTS/AVERAGE OUTPUT CURRENT 1.5 A * PIV 1500 TO 3000 VOLTS/AVE. OUTPUT CURRENT 360mA * OPERATING AND STORAGE TEMPERATURE -55°C TO +150°C * ALSO AVAILABLE WITH "FAST" RECOVERY CHARACTERISTICS UP TO 1000 VOLTS

Contextual Info: F-206-1 Te c IDC D-SUB ASSEM BLY DCMD, DCSD SERIES SPECIFICATIONS For complete specifications see www.samtec.com?DCSD or www.samtec.com?DCMD Insulator Material: High Temperature Thermoplastic Contact Material: Phospher Bronze Shell Material: Steel Shell Plating:

Contextual Info: DUAL-IN-LINE, Molded THICK FILM RESISTOR NETW ORKS Model MDP16-45 FEATURES • .190 [4.83] maximum seated height Reduces total assem bly costs • Rugged, m olded case construction Com patible with automatic insertion equipment • Highly stable thick film

RAC164D

Contextual Info: FIXED CHIP RESISTOR NETW ORKS; RECTANGULAR TYPE kam aya ohm RAC • Features 1. High-density SM D packaging gives higher productivity and reduces assem bly costs. Chip Resistor Networks 2. Stability Class : 5% »Dimensions and Circuits I Terminai Style: B |

MIL-C-28754

Abstract: M 28754
Contextual Info: Product Specification 108-12057 07Aug08 Rev E All Paragraphs Revised ECONOMATE II Connector Receptacle and Blade Header Assembly 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the Tyco Electronics ECONOMATE II Connector Assem bly.

Contextual Info: tifcn AMPLIMITE Subminiature D Type Connectors Electronics AMPLIMITE .050 Series Plug Assemblies Unshielded for .025 [0.64] Centerline Ribbon Cable, Series III Plug Assem bly AMPLIMITE .050 Series Connectors, Series III Materials: Housing and Termination Covers— Therm oplastic, 94V-G rated,

Contextual Info: Assem bly instructions To help facilitate proper cabie assembly and for convenience, a number of Assembly instructions are included m this catalog on the following pages. Please note that the specific Assembly Instruction which applies is indicated throughout the catalog with

ICAN-6525

Abstract: ICAN-6602 ICAN-6572 CD4560B CD4519B 4049U CD4560
Contextual Info: Genera/ Operating and Application Considerations • • • • • • • • • O perating supply-voltage range Power dissipation and derating System noise considerations Power-source rules G ate-oxide protection networks Input signals and ratings Chip assem bly and storage

Contextual Info: AMPLIFIER/SWITCH ASSEM BLY MODEL: SW -A-047180 FEATURES • • • • • • • • Military application Broadband RF coverage . 0.475-18.5 GHz RF g a in . 23 dB nominal Channel-to-channel is o la tio n .45 dB minimum

philips resistor 2322

Abstract: ATIC 91
Contextual Info: Philips Components Product Specification Power Resistor Chip Size 1218 5% FEATURES 2322 735 QUICK REFERENCE DATA Reduced size of final equipment Resistance Range 112 to 1 MU; E24 Series Lower assem bly costs Resistance Tolerance ± 5% Higher com ponent and equipment

KZ5 X

Abstract: KZ4 SOT23 VISHAY kz4 diode KZ2 sot23 BZX84C 6v2 zener diode KZ1 sot23
Contextual Info: BZX84C2V7-BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features • Planar die construction • 350 m W Power dissipation • Zener voltages from 2.7V - 51V • Ideally suited for autom ated assem bly processes Absolute Maximum Ratings Tj = 25°C

PHILIPS BLY 94

Abstract: marking code 738 resistor 2322 series
Contextual Info: Preliminary Specification Philips Components High Precision Resistor Chip Size 0805 .5% FEATURES 2322 738 QUICK REFERENCE DATA Reduced size of final equipm ent Resistance Range 100 U to 1 MSì; E24/96 Series Lower assem bly costs Resistance Tolerance ± 0.5%