BLY 33 TRANSISTOR Search Results

BLY 33 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

BLY 33 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BLW24 Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92 Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V	OCR Scan	BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92	PDF
blw 30 or bfw 30 Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53 Contextual Info: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V	OCR Scan	O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53	PDF
BLY78 Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53 Contextual Info: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V	OCR Scan	BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53	PDF
BLW16 Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11 Contextual Info: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V	OCR Scan	BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11	PDF
BLY93A Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63 Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V	OCR Scan	BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63	PDF
BLY93 Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88 Contextual Info: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V	OCR Scan	BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88	PDF
BLY 33 transistor Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor Contextual Info: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .	OCR Scan	BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor	PDF
bly 2 10 Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor Contextual Info: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz	OCR Scan	BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor	PDF
TRANSISTOR BJ 042 Contextual Info: -Jolitron ÄTTÄIL© Devices. Inc. MEDIUM VOLTAGE, MEDIUM POWER CHIP NUM BER NPN EPI BASE POWER TRANSISTOR c rfl c 'l CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also available	OCR Scan	37mra) 305mm) 300pF 300pF 2N3716, 2N5303, 2N5881, 2N5882 TRANSISTOR BJ 042	PDF
5609 Abstract: 5609 transistor 2N6676 2N6677 2N6678 CCC6678 Contextual Info: 61 159 50 MICR OS EMI 02E 0 0 5 0 7 CORP/POWER T'33- 3 D DE jb llS ^ S O 0000507 5 \| 05 CCC6678 TECHNOLOGY 15 A, 650 V, NPN Power Transistor Chip • E pitaxial D iffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum Collector (Al-Ti-Ni-Au	OCR Scan	CCC6678 emitter-15-mil thickness-18 2N6676 2N6677 2N6678 5609 5609 transistor 2N6678 CCC6678	PDF
Contextual Info: FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)	OCR Scan	FRM9140D, FRM9140R, FRM9140H -100V, 300S1 O-204AA 100KRAD 300KRAD 1000KRAD	PDF
Contextual Info: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)	OCR Scan	FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD	PDF
LDR 03 Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12 Contextual Info: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren	OCR Scan		PDF
BUT11 equivalent Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS Contextual Info: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec	OCR Scan	flb55 BUT11 BUT11/A BUT11FI/AFI O-220 ISOWATT220 BUT11/FI BUT11A/AFI ISOWATT-220 BUT11 equivalent transistor t220 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS	PDF

Contextual Info: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event	OCR Scan	FSS130D, FSS130R O-257AA 1-800-4-HARRIS	PDF
Contextual Info: FSYA450D, FSYA450R Semiconductor D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	FSYA450D, FSYA450R 1-800-4-HARRIS	PDF
Contextual Info: FSYA450D, FSYA450R Semiconductor March 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	FSYA450D, FSYA450R 1-800-4-HARRIS	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
Contextual Info: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSJ264D, FSJ264R MIL-S-19500	PDF
Contextual Info: m H EW LETT PACKARD AT-00500 Up to 4 Hz General Purpose Silicon Bipolar Transistor Chip Features • Chip Outline 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz • High Gain-Bandwidth Product: 9.0 GHz typical fr	OCR Scan	AT-00500	PDF
AT-00500 Abstract: Hewlett-Packard transistor microwave Silicon Bipolar Transistor Hewlett-Packard Contextual Info: HEWLETT-PACKARD/ m CMP N T S blE HEW LETT D 44475A4 0 D D ci 7 b ñ GET AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip D iO iA D n Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz	OCR Scan	AT-00500 AT-00500 Hewlett-Packard transistor microwave Silicon Bipolar Transistor Hewlett-Packard	PDF
LC125A Abstract: transistor 2n 929 transistor 926 f425 221-383 transformer 50KHz 100W SGSIF325 SGS transistors lc-125A if425 Contextual Info: 7^5^537 0 0 a q i 7 1 3 • SGS-THOMSON E u M T ‘ ^ l > ~ 3 SGSIF325 SGSF425-SGSIF425 G S - T HO M SO N 30E D FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ HIGH SWITCHING SPEED NPN POWEH TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA	OCR Scan	SGSIF325 SGSF425-SGSIF425 50kHz SGSIF325-SGSJF425-SGSIF425 500ms LC125A transistor 2n 929 transistor 926 f425 221-383 transformer 50KHz 100W SGSIF325 SGS transistors lc-125A if425	PDF
transistor f461 Abstract: IF461 I F461 SGSIF461 smps 1500W SGSF461-SGSIF461-SGSF561 SGSF461 MOSFET 700V 10A SGSF461 equivalent smps 750W Contextual Info: 7 ^ 5 3 7 a Q P g q g Q l_ Û • / SGS-THOMSON iLHOTO «! n S G S-THOMSON i • - ^3 SGSF461 SGSIF461/F561 3QE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA	OCR Scan	SGSF461 SGSIF461/F561 70kHz ISOWATT218 SGSF461-SGSIF461-SGSF561 T-33-T3 500ms transistor f461 IF461 I F461 SGSIF461 smps 1500W SGSF461-SGSIF461-SGSF561 SGSF461 MOSFET 700V 10A SGSF461 equivalent smps 750W	PDF
Contextual Info: HEWLETT-PACKARD/ m C MP N T S blE D • 44475Û4 0 D D cl 7 b ö D2T AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip HEW LETT PACKARD Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz	OCR Scan	AT-00500	PDF

BLY 33 TRANSISTOR Search Results

BLY 33 TRANSISTOR Result Highlights (5)

BLY 33 TRANSISTOR Datasheets Context Search

BLW24

blw 30 or bfw 30

BLY78

BLW16

BLY93A

BLY93

BLY 33 transistor

bly 2 10

TRANSISTOR BJ 042

5609

LDR 03

BUT11 equivalent

Transistor 2SA 2SB 2SC 2SD

AT-00500

LC125A

transistor f461