BLX POWER Search Results

BLX98

Abstract: npn UHF transistor BLX-98 UHF TRANSISTOR
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BLX-98 Silicon NPN UHF transistor BLX-98 is designed for linear amplifier applications in commercial and industrial equipment for TV re-transmitters specifically . Output Power: Frequency Range: Voltage: Package Type: Common Base Configuration

npn UHF transistor

Abstract: BLX-96
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BLX-96 Silicon NPN UHF transistor BLX-96 is designed for linear amplifier applications in commercial and industrial equipment for TV re-transmitters specifically . Output Power: Frequency Range: Voltage: Package Type: Common Base Configuration

BLX-97

Contextual Info: GAE GREAT AMERICAN ELECTROINCS BLX-97 Silicon NPN UHF transistor BLX-97 is designed for linear amplifier applications in commercial and industrial equipment for TV re-transmitters specifically . Output Power: Frequency Range: Voltage: Package Type: Common Base Configuration

BLX98

Abstract: blx power HELICOPTER BLX-98 npn UHF transistor 40-860MHZ
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BLX-98 Silicon NPN UHF transistor BLX-98 is designed for linear amplifier applications in commercial and industrial equipment for TV re-transmitters specifically . Output Power: Frequency Range: Voltage: Package Type: Common Base Configuration

AQBF

Contextual Info: 0 38% Mesws. %% TOCOS AMERICA .INC. $&#% % Carbon film variable resistor @P+tlf#f% Customer Specification Number @+t#@% Customer Part Name rn+tSa"a%% Customer Yart Number %1f 85% TOCOS Part Name %+klfH%% TOCOS Specification Number RY -7 7 2 2 *blX€Xt##3f%

39b1

Abstract: KV2001-00 39-B1
Contextual Info: rEHEPATOPHblM TETPOfl ry -3 9 B -i TETRODE TeHepaTopHbiM TeTpofl ry-39B-1 npeflHa 3 H aH e H flrm y c u n e H u n molhhoctm b kopoTKOBOJiHOBbix ne pe,qaT H H K ax CTaLjMO- H apH blX paflMOTeXHMHeCKMX yCTpOMCTB. 05ÜJME CBEflEHMJl CXEMA COEflMHEHMfl 3JlEKTP0fl0B

K1760

Abstract: K176TM2 K176KT1 ussr K174TM1 K176HA7 k176 K13G K176TM1 K174
Contextual Info: ». *• /*•/ /' a • ••••’ . . • • ••••• CEPMM ; MHTErPA/lbH blX MMKPOCXEM • INTEGRATED MICROCIRCUITS FAMILIES . . *• '' ^ ï | -, M . K176 K590 M O n -M HTerpanbHbie MMKpocxeMbi M O S -In te g ra te d M ic ro c irc u its MnHjx>cxcvn.i cepmi K176 np<*/j»cs:«H;mciiu' j\nn

K176KT1

Abstract: k176 USSR K176TM2 K174HA7 K176HA7 K176NE6 K176PM1 K176 ussr modulo 10 counter
Contextual Info: ». *• /*•/ /' a • ••••’ . . • • ••••• CEPMM ; MHTErPA/lbH blX MMKPOCXEM • INTEGRATED MICROCIRCUITS FAMILIES . . *• '' ^ ï | -, M . K176 K590 M O n -M HTerpanbHbie MMKpocxeMbi M O S -In te g ra te d M ic ro c irc u its MnHjx>cxcvn.i cepmi K176 np<*/j»cs:«H;mciiu' j\nn

dynode

Contextual Info: 6B2Î1 TETPOß TETRODE OBIHHE CBE^EHHH GENERAL T e T p o Æ c o B T o p H H H o ii 3 MHCCHCH 6B2IT n p e ,H H a 3 H aH eH m i x HCII0 JIb 3 0 BaHHH B H M nyjIbC H blX CXeM aX C T aU H O H apHblX VCTpOHCTB. KaTozi — Macca H e OKCHflHfciH K O C B eH H oro H a x a j i a .

KF 517

Contextual Info: 6Ì19 B h x o ä h o h neHTOÄ BbIXOÄHOH IieH TO fl Output pentode 6 1 1 9 npe,a,Ha3HaqeH äjih ycH- JieH H H MOLUHOCTH B IU H p O K O n O JIO C H blX y C H JIH T ejIH X . B b ix o Ä H b ie n e H T o a b i 6 F I9 B binycK aiO T C H b M eTaJIJIHHeCKOM 0 { 0pM ,JieHHH C O K TajIbH bIM UOKOJieM ,

BLW24

Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V

BLW20

Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
Contextual Info: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V

BLY78

Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
Contextual Info: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V

blw 30 or bfw 30

Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Contextual Info: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V

BLW25

Abstract: bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
Contextual Info: BLW25 SIL IC O N NPN VH F POWER T R A N SIST O R High Gain Output for 13 V A M Applications 40 W a t 175 M H z M inim um Gain 7 dB. mechanical specifications absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .60 V

BLY93

Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Contextual Info: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V

BFW 11 oa

Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
Contextual Info: BLW18 SILIC O N NPN VH F POWER T R A N S IST O R electrical characteristics at 25 °C case temperature unless otherwise noted PAR AM ETE R V IBR)CER lc = 50 m A , R b e = 1 0 Í2 L V CEO C o lle ctor-E m itte r Breakdown Voltage I q = 50 m A , Iß = o See N ote 1

BLW16

Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Contextual Info: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V

TRANSISTOR BFW 11

Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
Contextual Info: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C

BLW 12v

Abstract: TO-131 Package BLY85 BLW11 BLW17 BLY53 bly53a BLY 67 BLY60 BLX67
Contextual Info: BLW17 SIL IC O N NPN V H F POWER T R A N SIST O R 271 HIGH G AIN MEDIUM POWER VH F AM PLIFIER • • • • 2 W@ 175 MHz 13 dB Gain Stripline Package Interdigital Geometry mechanical specification absolute maximum ratings T Ca s e ~ 25 °C Collector-Base V o lta g e .36 V

Contextual Info: EVALUATION KIT AVAILABLE MAX14663 Portable Medical Power Management Solution with Cable Detection General Description Benefits and Features The MAX14663 integrates a high-efficiency single-cell Li-ion switching charger targeted at space-limited portable applications with small batteries.

BLY 33 transistor

Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
Contextual Info: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .

ARM10TDMI

Abstract: ARMv5T ARM9 instruction set VFP10 ARM processor Armv4 ARMv4 reference ARM1020T applications of ARM10TDMI processor ARM bus ARM7 instruction set
Contextual Info: ARM10 Thumb®Family 300MHz low-power system-on-a-chip processor solutions delivered at a consumer price point Product Overview Applications • • Next-generation hand-held products: - Communicators - Smartphones - Subnotebook computers Digital consumer

BLX94A

Abstract: BLX94C 7Z66 itr 8012 rbs 6102 IEC134 BLX94
Contextual Info: b SE T> m 7110ÔSb IPHIN □ □ b 3 S 5 c] S 1G BLX94A BLX94C BLX94A IS MAINTENANCE TYPE PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transm itting applications in class-A, B o r C in the u.h.f. range fo r a nominal supply voltage up to 28 V. The transistors are resistance stabilized and tested