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BLF6G22-180PN
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB | 
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78.05KB | 
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BLF6G22-180PN,112
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT539A | 
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PDF
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1.1MB | 
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BLF6G22-180PN,112
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack | 
Original | 
PDF
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78.05KB | 
11 | 
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BLF6G22-180PN,112
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NXP Semiconductors
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RF FETs, Discrete Semiconductor Products, TRANS BASESTATION SOT539A | 
Original | 
PDF
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14 | 
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BLF6G22-180PN,135
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NXP Semiconductors
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BLF6G22-180PN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, Large | 
Original | 
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274.71KB | 
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