BLB M Search Results

hb56a51240

Abstract: HM514256 HB56A51240BR7A
Contextual Info: blE P • 44^b203 002355b blB ■HITE! HB56A51240BR Series 524,288-W ord x 40-Bit High Density Dynamic RAM Module HITACHI/ LOGIC/ARRAYS/MEM The H B56A51240BR is a 512k x 40 dynamic RAM m odule, m ounted 20 p ieces o f I-M bit DRAM HM514256AJP sealed in SOJ package.

Contextual Info: blE ]> • beMTflET M ITSU B ISH I O G lM blb DISCRETE ñm ■ M IT 5 MITSUBISHI LASER DIODES ML6XX3A SERIES SC FOR OPTICAL INFORMATION SYSTEMS TYPE NAME M L 6 4 1 3 A , M L 6 4 1 3 C DESCRIPTION ML6XX3A which is a FEATURES h ig h -p o w e r semiconductor

54X4

Abstract: lf 221 LA-221
Contextual Info: • 7 a 2 f l tm ^ — 00DB074 blB ■ RHfl LA-221 Series K /L ig h t Emitting Diodes LA-221 Series High-Efficiency Numeric Displays 1j4 Jfi\H :£ E l/ D irn e n sio n s U n it: mm LA-221 ' s V —X l i , 12±0.3 ¿0.6 48 + 0.3 U s e ic is iis Ä L T i f L t ,

ScansU9X26

Abstract: DAKT
Contextual Info: BblCOKOBOJlbTHblÑ IHViny/lbCHblM KEHOTPOH BI/11-5/20 PULSE RECTIFIER TUBE BblC O K O B O JlbTH bliî M M n yjlb C H b M KeHOTpOH BH1-5/20 n p e flH a 3 H a n e H f l / i a n c n o n b 3 0 B a H n n b n M n y n b C H b ix y c T p o tiC T B a x . OELi|ME CBEflEHMfl

82C79

Abstract: TMP82C79 SSOP40 fifo ram 8bit TMP82C79P-2 line scan sensor SSOP40 package 16X4 MPU85-272 D-B73C
Contextual Info: T O S H IB A TMP82C79 P R O G R A M M A B LE KEYBO ARD /D ISPLAY INTERFACE TMP82C79P-2/TMP82C79M-2 1. G EN ER A L DESCRIPTION The TM P82C79P-2/M-2 hereinafter referred to as TM P82C79 is a programmable keyboard/display interface. The keyboard portion can provide a scanned interface up to

Contextual Info: o o Ln Ln o o +i m Ln — o +i C\l « r , .^ A-A SCALE:5-I 53927-5010 ENG. No. MOLEX-JAPAN CO.LTD. M ATERIAL tt± \1 A S A a ANGLE *3° 30 M mm RELEASED S !* S E« LTR REVISION RECORD REVISE ONLY ON CAD SYSTEM T IT L E € W " IN S. RANGE 10 {jig!? 30 umi^;

Contextual Info: MMnyjlbCHblM MOflyjlflTOPHblM TPI/IOfl rMM-30 TRIODE HMnynbCHbiíí M0flynflT0pHbiíi Tpnofl TMM-30 npeflH a3H a neH flr m K O M M y T a i^ n n M M n y n b C H O ii m o u ^ h o c t m b MMnynbCHbix M0,qyrmT0pax paflMOTexHUHecKnx ycTpo- CXEMA COEflM HEHMfl 3/lE K T P O flO B

Contextual Info: SMS 120.SMS 1100 Schottky-Gleichrichter für die Oberflächenmontage Surface Mount Schottkv-Rectifier 1A Nominal current Nennstrom 20. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung 0 2,5 x 5 [mm] Plastic case MELF Kunststoffgehäuse MELF

NPN C239

Abstract: kv35
Contextual Info: MIYinyjlbCHbM TEHEPATOPHblN TPI/IOfl ril-425 TRIODE MMnyjibCHbm reHepaTopHbiii Tpnofl rM-425 npeflHa3HaneH p,ns\ ycuneHMii moiijhoctm BbicoKOHacTOTHbix The fM-425 triode is used as a RF power amplifier. K O Jie ô a H n ü . 05L1JME CBEflEHMfl KaTO fl - BOJlbCj paMOBblM TOpupOBaHHblM KapÔMflMpoB aH H b iM n p n M o r o H a K a /ia .

Contextual Info: B JK f t REV. 8Z 180 l PS ‘ON 0 N lM v a a 4 # iiH DATE 25.May.2010 ±o. 1 A £- A - =* TABLE 3 .DIMENSIONS 10 K M F3 &

Contextual Info: bbE INTEGRATED DEVICE T> m 4Ô25771 G01E55fl 063 « I D T 64 X 36 X 2 DUAL BIDIRECTIONAL CMOS SyncFlFO ADVANCED INFORMATION IDT723612 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Free-running CLKA and CLKB may be asynchronous or coincident

TMP8279P-5

Abstract: TMP8279 keyboard matrix toshiba keyboard matrix 16*8 line scan sensor 16X4 n-key rollover 16x8 dual ram tmp8279p
Contextual Info: T O S H IB A TM P8279 P R O G R A M M A B L E K E Y B O A R D /D IS P L A Y INTERFACE T M P 8 2 7 9 P -5 1. GENERAL DESCRIPTION T he T M P 8279P -5 h e re in a fte r re fe rre d to as T M P 8279 is a p ro g ra m m a b le keyboard/display interface designed for use as the TLCS-85 A m icrocom puter p eriph eral.

12X3C

Contextual Info: A bohhoh ^HOA I2X3C Double diode 12X3C The 12X3C double diode is designed for highfrequency oscillation detection and conversion. CBepXBblCOKOH ^aCTO Tbl. The 12X3C double diodes are enclosed in glass j^B O H H bie AHOAbi 12X3C BbinycKaiOTCH b CTeKbulb and are provided with five rigid leads and

Contextual Info: Final Electrical Specifications LT1309 500kHz Micropower DC/DC Converter for Flash Memory TECHNOLOGY M ay 1995 D€SCRIPTIOn F€ATUft€S • 60mA Output Current at 12V from 3V or 5V Supply ■ Shutdown to 9pA ■ VPP VALID Comparator ■ Up to 85% Efficiency

Contextual Info: SbE D 7^2^237 004023h Ifi? IS6TH M54HCT563/573 M74HCT563/573 SGS-THOMSON m OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT HCT563 INVERTING - HCT573 NON-INVERTING s G s -THOMSON T -n -o r- n HIGH SPEED tpD = 20 ns TYP. at VCc = 5V LOW POW ER DISSIPATION Ic e = 4 /iA (MAX.) at TA = 2 5 °C

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28828-2E ASSP For Screen Display Control CMOS On-Screen Display Controller MB90099 • DESCRIPTION The MB90099 is an on-screen display controller for displaying text and graphics on the TV screen. The threechannel output control function, compact package and low voltage operation make this device suitable for onscreen displays in portable devices including camera-integrated VTRs and digital still cameras.

07KV

Abstract: v07k
Contextual Info: MMnyjlbCHblM CBEPXBblCOKOHACTOTHbm TPMOfl rU-65 MICROWAVE TRIODE H M n y n b C H b lÜ CBepXBblCOKO HaCTOTHbIM T p k lO fl TH-6B npeflHa3HaneH ,qrm reHepupoBaHua KoneóaHMM b re H ep aT op ax 6 e 3 B H e w H e iü o ó p a T H O ü 3 c b a m b Henpe- pblBHOM pe>KMMe paÔOTbl M B MMny/lbCHOM pe>KHMe npn

Contextual Info: POUEREX INC U E W U 15E R E D • 7 2 T M b 51 G G Q 3 L 13 3 ■ CM430490 CM430890 X Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCR

Contextual Info: mmMhns' SSI 32R2025R 5V, 4-Channel Thin-Film Read/Write Device A TDK Group/Company Advance Information December 1993 DESCRIPTION FEATURES The SSI 32R2025R is a bipolar monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write

Contextual Info: MICRON SEMICONDUCTOR INC L.7E D • b l l l S ^ □ □ G cm H 240 ■ MRN PRELIMINARY W IIC R D N — - MT5C256K4A1 REVOLUTIONARY PINOUT 256K x 4 SRAM SRAM 256K x 4 SRAM FEATURES • High speed: 12,15, 20 and 25ns • Multiple center power and ground pins for greater

Contextual Info: For Communications Equipment_ P f l n f l S O i l i C MN86063 High-Speed CODEC LSI for Facsimile Images • Overview ■ Function The MN86063 is a high-speed LSI codec for compressing and decom pressing facsim ile im ages. Features include

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M C-421000AA64FA 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA64FA is a 1,048,576 words by 64 bits dynamic RAM module on which 16 pieces of 4 M DRAM: /iPD424400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the

Contextual Info: Preliminary 2P E X 4R XR-T5894 Four-Channel E1 Line Interface 3.3V .the analog plus com pany •- -, X« June 1997-3 FEATURES Compliant with ITU G.703 Pulse Mask Template for 2.048Mbps (E1) Rates Logical Inputs Accept either 3.3V or 5.0V Levels Low CMOS Process

P8279

Abstract: 8279-5
Contextual Info: TOSHIBA TMP8279 PRO GRAM M ABLE KEYBOARD/DISPLAY INTERFACE TMP8279P-5 1. GENERAL DESCRIPTION T h e T M P 8 2 7 9 P -5 h e r e i n a f t e r r e f e r r e d to a s T M P 8 2 7 9 is a p r o g r a m m a b le k e y b o a rd /d isp la y in te rfa c e d e sig n e d for u se as th e T L C S -85 A m ic ro c o m p u te r p e rip h e ra l.