BL15 ST Search Results

power LED 650nm

Abstract: BL15-6F 650nm LED pd
Contextual Info: Pin-Point LED AlGaInP KODENSHI BL15-6F DIMENSIONS (Unit : mm) The BL15–6F is a LED of 650nm wavelength using four elements (AlGaInP).Our original LED processing technology made it possible to increase the electric current density at the emission point.The luminous

power LED 650nm

Abstract: BL15-1101
Contextual Info: Pin-Point LED AlGaInP KODENSHI BL15-1101 DIMENSIONS (Unit : mm) The BL15-1101 is a LED of 650nm wavelength using four elements (AlGaInP). Our original LED processing technology made it possible to increase the electric current density at the emission point. The luminous

BL15-325

Abstract: power LED 650nm
Contextual Info: Pin-Point LED AlGaInP KODENSHI BL15-325 DIMENSIONS (Unit : mm) The BL15-325 is a LED of 650nm wavelength using four elements (AlGaInP). Our original LED processing technology made it possible to increase the electric current density at the emission point. The luminous

power LED 650nm

Abstract: 650nm LED pd BL15-1212 LED 3v 20ma BL15121 BL151212
Contextual Info: Pin-Point LED AlGaInP KODENSHI BL15-1212 DIMENSIONS (Unit : mm) The BL15-1212 is a LED of 650nm wavelength using four elements (AlGaInP). Our original LED processing technology made it possible to increase the electric current density at the emission point. The luminous

BL15-1101

Abstract: bl15
Contextual Info: BL15-1101 点光源赤色発光ダイオード PIN-POINT LED BL15-1101は当社独自のLEDプロセス技術により、発光点での電流密度を高め、点光源で単位面積当たりの 発光量が当社従来比１桁アップ。４元素AlGaInP発光波長650nmのLEDです。

Contextual Info: UNIVERSAL SERIAL BUS 3.0 KUSBVX Series KYCON Documentation & Ordering Information RoHS Drawing Stock CofC Sample Email RFQ Kycon Part # KUSBVX-AS1N9-BL15 Part Number Builder KUSBVX Series KUSBVX AS1N9 Series Type BL Insulator Option Vertical Top Entry Universal Serial Bus 3.0

Contextual Info: UNIVERSAL SERIAL BUS 3.0 KUSBVX Series KYCON Documentation & Ordering Information RoHS Drawing Stock CofC Sample Email RFQ Kycon Part # KUSBVX-AS1N9-BL15 Part Number Builder KUSBVX Series KUSBVX AS1N9 Series Type BL Insulator Option Vertical Top Entry Universal Serial Bus 3.0

BL15-1212

Contextual Info: BL15-1212 点光源赤色発光ダイオード PIN-POINT LED BL15-1212は当社独自のLEDプロセス技術により、発光点での電流密度を高め、点光源で単位面積当たりの 発光量が当社従来比１桁アップ。４元素AlGaInP発光波長650nmのLEDです。

sxn 357

Contextual Info: Features aM bl Industry Standard Architecture Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options Device Icc. Stand-Bv Icc. Active 85 mA 35 mA 5 mA 90 mA

Contextual Info: Prelimjpsry CMOS SRAM KM681001 B/BL, KM681001BI/BLI 128K x 8 Bit High-Speed CM OS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 15, 17, 20« • Max. . Low Power Dissipation The KM681001 B/BL is a 1,048,576-bit high-speed Static Ran­

Contextual Info: ATF22V1 OB/BL Features • Industry Standard Architecture Low-Cost, Easy-To-Use Software Tools • High Speed Electrically Erasable Programmable Logic Device 7.5 ns Max Propagation Delay • Low Power ATF22V1OBL -1 0 mA Maximum Standby • CMOS and TTL Compatible Inputs and Outputs

Contextual Info: ATF22V10B Features • Industry Standard Architecture Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device ATF22V10B ATF22V10BQ ATF22V10BL

ATF22V10B

Abstract: ATF22V10BQ ATF22V10BQL ATF22V10BL bl15 st
Contextual Info: Features • • • Industry Standard Architecture Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options Device ATF22V10B ATF22V10BQ ATF22V10BL ATF22V10BQL

Contextual Info: ATF20V8BQ/BQL Features • • • Quarter Power Equivalent of ATF20V8B - 55 mA Maximum Low Power ATF20V8BQL -1 0 mA Maximum Standby Industry Standard Architecture Emulates Many 24-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices

Contextual Info: KM64V4002B/BL, KM64V4002B/BLI CMOS SRAM 1 M x 4 Bit with OEjHigh-Speed CMOS Static RAM(3.3V Operating FEATURES GENERAL DESCRIPTION - Fast Access Time 10,12,15*(M ax.) - Low Power Dissipation The KM64V4002B/BL is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 1,048,576 words by 4 bits.

Contextual Info: Prelim inary CMOS SRAM KM68V4002B/BL, KM68V4002B/BLI 512K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •• Fast Access Time 10,12,15*(M ax.) - Low Power Dissipation Standby (TTL) : 40« • (Max.) The KM68V4002B/BL is a 4,194,304-bit high-speed Static Ran­

256X8* sram

Contextual Info: Prelim inary CMOS SRAM KM681001B/BL, KM681001BI/BLI 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17, 20* • Max. •• Low Power Dissipation Standby (TTL) : 20* • (Max.) (CM O S): 5 *»(Max.) 0.5* (Max.) - L-Ver. only

Contextual Info: P roiïm 'nnty KM64V4002B/BL, KM64V4002B/BLI CM O SSR A M 1M x 4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating) FEATURES GENERAL DESCRIPTION - Fast Access Time 10,12,15*»(Max.) - Low Power Dissipation Standby (TTL) : 40« • (Max. ) (C M O S ) : 10»»(Max.)

KM68V4002B

Contextual Info: Back PRELIMINARY CMOS SRAM KM68V4002B/BL, KM68V4002BI/BLI Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

512X16 sram

Abstract: KM616V4002B KM616V4002
Contextual Info: Prr?]>rrTine:y KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION - F astA ccessT im e 10,12,15 *(M a x.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM616V4002B/BL is a 4,194,304-bit high-speed Static

Contextual Info: KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* (Max.) - Low Power Dissipation The KM616V4002B/BL is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16

Contextual Info: CMOS SRAM KM68V4002B/BL, KM68V4002BI/BLI Document Till 512Kx8 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. y s gyffl g j 8 R ^pvi<«ion RevNo. aHs siQg,tn s r f j rv Tg History Draft Data Remark Rev. 0.0

Contextual Info: ATF20V8B/BL Features • Industry Standard Architecture Emulates Many 24-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Low Power ATF20V8BL -1 0 mA Maximum Standby

Contextual Info: CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997