BL MONOLITHIC AMPLIFIER Search Results

bdx67

Abstract: transistor bdx67
Contextual Info: N AMER PHILIPS/DISCRETE E5E bL.53‘ 3> 1 Q O nW 7 • BDX67; 67A BDX67B; 67C T -3 3 -3 .7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,

transistor d2271

Abstract: D2271 AN5296 Application note CA3018 CA3018A CA3018
Contextual Info: HARRIS bl E SEfllCOND S E C T O R D 43DE271 CA3018 ffl H A R R IS W □□Mb'ìflS 427 • H AS S E M I C O N D U C T O R General Purpose Transistor Arrays M arch 1993 Features Description • Matched Monolithic General Purpose Transistors T h e C A 3 0 1 8 a n d C A 3 0 1 8 A c o n s is t o f fo u r g e n e ra l p u rp o s e

Contextual Info: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL

mmic sot-89

Abstract: darlington amplifiers SNA-487 sna-186 SNA-486 SNA-176 STANFORD sna476
Contextual Info: Stanford Microdevices Characteristics of GaAs MMIC 50 Ohm Gain Blocks This section contains G a A s M M IC gain blocks from Stanford Microdevices. The devices below provide exceptional performance from D C to as high as 10 GHz. These monolithic HBT Darlington amplifiers are designed

Contextual Info: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL

Contextual Info: Not for new design, this product will be obsoleted soon TSDF52830YS Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching 6 Comments MOSMIC - MOS Monolithic Integrated Circuit VY

Contextual Info: TSDF12830YS Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Description The Dual-MOSMIC® TSDF12830YS, assembled in

Contextual Info: TSDF72830YS Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Description CW The Dual-MOSMIC® TSDF72830YS, assembled in

marking wm7

Contextual Info: TSDF32830YS Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Description The Dual-MOSMIC® TSDF32830YS, assembled in

Contextual Info: Ordering number: EN2623D Monolithic Linear 1C No. 2623D // LA6500 SANYO Power Operational Amplifier Features Package Dimensions • High output current Io max = 1.0 A • High gain unit : mm 3079-SIP-5H • With current limiter • Capable of being operated from single supply

Contextual Info: K hmcnGics AWT939 3.6 V DAMPS/AMPS Power Amplifier Advanced Product Information Your GaAs IC Source RevO 800 MHz Band DAMPS 3.6 V Dual Supply GaAs MMIC Power Amp Description: The AW T939 is a 3.6 Volt 2 stage monolithic Power Amplifier suited for dual mode

Contextual Info: TELEFUNKEN ELECTRONIC 61C D • fl^20Qeib 000365? U 2433 B m ilF M K IN I electronic - 7 ^ - 1 4 - iS - o Monolithic Integrated Circuit Application: Dual Low voltage Power Amplifier, especially for portable radios and cassette players

Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4007F TV TUNER VHF RF AMPLIFIER APPLICATIONS. FM T U NER RF AMPL IFIER APPLICATIONS. o On account of this Device built in Bias Circuit, Cut down number of articles, . Low Noise Figure : NF=1.3dB Typ.

XR-4212

Abstract: XR-4212CP XR-4212CN XR4212 exar
Contextual Info: XR-4212 Z * EXflR Quad Operational Amplifier FUN CTIO NAL BLOCK DIAGRAM G EN ER A L DESCRIPTION The XR-4212 is an array of four independent internally compensated operational amplifiers on a single silicon chip, each similar to the popular 741, but with a power

NF 838 G

Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4006F TV TUNER VHF RF AMPLIFIER APPLICATIONS. TV TUNER UHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account of this Device Built-in Bias Circuit, Cut down number of articles.

MOS marking 843

Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4007F TV TUNER VHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account o f this Dlevice b u ilt in Bias Circuit, Cut d o w n num ber o f articles. NF = 1.3dB Typ.

bl marking

Abstract: TA4006F 9y marking
Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4006F U dì I : mm O T V TUNER VHF BF AMPLIFIER APPLICATIONS. + 0.2 O T V TÜNER UHF RF A M P L I F I E R A P P L I C A T I O N S . O F M TUNER RF A M P L I F I E R A P P L I C A T I O N S . 2.8-0.3 • O n accounI of this Device built in Bias Circuit,

Contextual Info: f f î H A R R IS V IU S E M I C O N D U C T O R HA-2541/883 Wideband, Fast Settling, Unity Gain Stable, Operational Amplifier Features Description • This Circuit Is Processed in Accordance to MIL-STD883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1.

Contextual Info: TOSHIBA TA4103F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 1 0 3 F 1.9GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced MIX circuit • High conversion gain: • Recommended operating voltage :

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

AD8309

Abstract: AD8309ARU AD8309ARU-REEL AD8309ARU-REEL7
Contextual Info: a 350 MHz, 95 dB Demodulating Logarithmic Amplifier with Limiter Output AD8309 PRELIMINARY DATASHEET FEATURES Logarithmic Amplifier Performance -75 dBm to +20 dBm Dynamic Range 10 Stages, each having 12 dB gain & 750MHz BW Operates from 4MHz to 350 MHz ±1.0 dB Log Conformance max

Contextual Info: T O SH IB A TA4006F TOSHIBA MOS TYPE INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 6 F TV TUNER VHF RF AMPLIFIER APPLICATIONS. TV TUNER UHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account of this Device Built-in Bias Circuit, Cut down

TA7545

Abstract: TA75062F TA75062P TA75062S TA75458P dip-8p TA7506
Contextual Info: TOSHIBA TA7 5062 P/S/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75062P, TA75062S, TA75062F DUAL OPERATIONAL AMPLIFIER The TA75062P, TA75062S and TA75062F are J-FET input low-power operational amplifiers with low input bias and offset current and fast slew rate.

TA4007F

Contextual Info: TOSHIBA TA4007F TOSHIBA MOS TYPE INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 7 F TV TUNER VHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account of this Device built in Bias Circuit, Cut down number of articles. • Low Noise Figure