BL 9 A2 Search Results
BL 9 A2 Price and Stock
Panasonic Electronic Components EVP-BL9A2B0002.8mm x 1.9mm / 2.25N / 0.15mm stroke |
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EVP-BL9A2B000 |
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EVP-BL9A2B000 | Tape & Reel | 10 Weeks | 16,000 |
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EVP-BL9A2B000 | Each | 16,000 |
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EVP-BL9A2B000 | 16,000 |
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Panasonic Electronic Components EVP-BL9A2F0002.8mm x 1.9mm SMD |
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EVP-BL9A2F000 |
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EVP-BL9A2F000 | Each | 20,000 |
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Panasonic Electronic Components EVPBL9A2B000Tactile Switch, 0.02A, 15Vdc, 225Gf, Smd; |Panasonic EVPBL9A2B000 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EVPBL9A2B000 | Cut Tape | 10 |
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| EVPBL9A2B000 | Tape & Reel | 100 |
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TE Connectivity 35-524-231-BL-A2-900Batterietrennschalt |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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35-524-231-BL-A2-900 | 10 |
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Panasonic Industry EVP-BL9A2B000Switch Tactile N.O. SPST Round Button Gull Wing 0.02A 15VDC 2.25N SMD T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EVP-BL9A2B000 | 500 |
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BL 9 A2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23409B/BL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs in SOJ MSM514100B/BL packages, mounted |
OCR Scan |
msc23409b/bl-xxds9304-wordmsm514100b/bl30-pin | |
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Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23109B/BL-xxDS3 is a fully decoded 1,048,576 word x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages and one 1-Mb |
OCR Scan |
msc23109b/bl-xxds3576-wordmsm514400b/blmsm511000b/bl+3 | |
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Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23109B/BL-xxDS3 is a fully decoded 1,048,576 word x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 4-Mb DRAMs in SOJ M SM 514400B/BL packages and one 1-Mb |
OCR Scan |
msc23109b/bl-xxds3576-wordsc23109b/bl-xxds3514400b/bl+3 | |
tc511000Contextual Info: 1,048,576 W O R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The TH M 91000BS/BSG /BL is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511000BJ on the printed circuit board. The THM91000BS / BSG / BL is optimized for |
OCR Scan |
91000bs/bsgtc511000bjthm91000bs110ns+5 | |
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Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DE S C R IP TIO N The OKI M SC23109B/BL-xxD S3 is a fully decoded 1,048,576 word x 9-bit CM OS Dynamic Random Access Memory Module. It is composed of two 4-M b DRAM s in SOJ M SM 514400B/BL packages and one 1-Mb |
OCR Scan |
msc23109b/bl-xxds3576-wordmsm514400b/blmsm511000b/bl+1 | |
PA28F400
Abstract: socket Yamaichi ic51 CIC-44PS-40D-B6-YAM IC51-0442-1536
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cic-44ps-40d-b6-yam44-lead40-pinpa28f002bc+4 | |
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Contextual Info: r n RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBUSHED. @ COPYRIGHT 19 BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. — Bl - ► 2.54 TYP - x - 1.27 TYP D — - Bl ► A A LOC DIST AG 53 REVISIONS TTTT “ BBCRiPTiöFT" REVISED PER EC 0 G3 C - 2 3 8 - 9 9 |
OCR Scan |
16dec99ms-016ms-01825mar99+4 | |
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Contextual Info: GM7 1 C4 1 0 0 B/BL G oldStar 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4100B/BL is the new generation dy nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100B/BL has realized higher density, higher performance and various functions by |
OCR Scan |
gm71c4100b/blm02fi7s771c4100b/bl20soj+3 | |
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Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-word x 9-bit CM OS D ynam ic Random Access Memory Module com posed of nine 4-Mb DRAMs in SOJ M SM 514100B/BL packages, mounted |
OCR Scan |
msc23409b/bl-xxds9304-wordmsc23409bmsm514100b/bl+1 | |
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Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 4-M b DRAM s in SOJ M SM 514100B/BL packages, mounted |
OCR Scan |
msc23409b/bl-xxds9304-word23409b304-w+2 | |
CIC-44PS-40D-C6-YAM
Abstract: IC51-0442-1536 socket Yamaichi ic51
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cic-44ps-40d-c6-yam44-lead40-pinic51-0442-1536+5 | |
CIC-44PS-40D-C6-YAM
Abstract: PA28F200 IC51-0442-1536 socket Yamaichi ic51 intel pa28f400
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cic-44ps-40d-c6-yam44-lead40-pinic51-0442-1536+6 | |
PA28F800
Abstract: IC51-0442-1536 CIC-44PS-44D-A6-YAM 44PIN DIP SOCKET
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cic-44ps-44d-a6-yam44-lead44-pinpa28f002bc+5 | |
BL-XD0361
Abstract: BL-XF0361 BL-XJB361 BL-XX1361
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OCR Scan |
ta-25bl-xxx61bl-xsx361xdx361+9 | |
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Contextual Info: bl E bEMTflSS D OOEGMb? DT4 • M I T I MITSUBISHI LSIs MH1M09A0AJ - 6, - 7, - 8, -10/ MH1M09A0AJA- 6, - 7, - 8, -10 FAST PAGE MODE 1048576-WORD BY 9 - BIT DYNAMIC RAM MITSUBISHI MEMORY/ASIC DESCRIPTIO N The MH1M09A0AJ, J A is 1048576-word x 9- bit dynamic |
OCR Scan |
mh1m09a0ajmh1m09a0aja-1048576-wordmh1m09a0aj-+1 | |
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Contextual Info: 1,048,576 W 0 R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The T H M 9 1 0 0 0 B S /B S G /B L is a 1,048,576 words by 9 bits dynam ic RAM m odule which assem bled 9 pcs of TC 511000B J on the printed circuit board. The THM 91000BS / BSG / BL is optim ized for |
OCR Scan |
511000b91000bsthm91000bssg/bl-60+5 | |
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Contextual Info: REVISIONHISTORY CREATED PD 2,50 18 PLC SJ EXTERIOR WALLS ON CAVITIES A4, 9 4 , F4, G5, H 9.J9, N9 d PIO n 2.50 ! 8 PLC SJ EXTERIOR WALLS ON C AVITIES AI f Bl, F I, Gi, H6, J6, NS & P6 wmu?1 flr1 wï? 2.00 S26 PLCSJ BETWEEN C AVIT IES Al, A2, A3, A4, B l. B2, B3, B 4 , |
OCR Scan |
j1344 | |
830A2Contextual Info: WIRING pi 1 2 3 4 SHELL DIAGRAM WI RE COLOR RED WH I T E GREEN BL ACK SHI ELD AWG 28 28 28 28 - A ìI 9 74 5 3 8 -1 PART NUMBER 830 A 1 2 REVISIO NS CF A 39 R EL A R E V IS E D PER PR 9 8 - 7 9 2 2 - 0 3 7 - 0 1 PER O B 2 0 - 0 5 1 5 - 9 9 7 /2 0 /9 0 DGG |
OCR Scan |
830mmdlhen510n5iunle55830a2 | |
nec A2CContextual Info: bl E D H i b l<E7S2S 0 0 3 4 0 3 2 101 H N E C E fiPD4216902 2,097,152 X 9-Bit Dynamic CMOS RAM W NEC Electronics Inc. Advance Information NEC ELECTRONICS INC Description The devices listed below are static-column dynamic RAMs organized as 2M words by 9 bits and designed to |
OCR Scan |
42s169029021powupd42169024216/42s16+5 | |
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Contextual Info: bl E D • bSMTÖES 0 0 1 7 5 ^ 2*îD ■ MITI ^rg MITSUBISHI MEMORY/ASIC v MITSUBISHI LSIs M5M4V17900AJ,TP,RT-6,-7,-8 FAST PAGE MODE 18874368-BIT ( 2097152-WORD BY 9-BIT ) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (T O P V IE W ) This is a family of 2097152-word by 9-bit dynamic RAMS, |
OCR Scan |
m5m4v17900aj18874368-bit2097152-word | |
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Contextual Info: 5370~5370}? .@?;9;?6A2 =28.C 3HERSPHQ Y Rn[fbgbZmnk^ Znmhfhmbo^ k^eZr Y Sa^ p^b`am bl hger 9` _hk lbg`e^ k^eZr Y Eqm^g]^] m^fi3 kZg`^ ni mh 65: Y Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ?VOJFEK .OOKJFERJNMQ ZoZbeZ[e^ .HFJC2S/ C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1 |
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CED-2-A-XX-XX-B1-X-SGX-B3-XXContextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C D SPECIFICATIONS Current rating: Contact material: Contact resistance: Housing material: Insulation resistance: Withstanding: Operating temperature: • All mounting types available with boardlocks BL • Straight (A mount) type available in press fit (PF) |
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ul94v-0500vdc000vacdin41612+1 | |
HM514100
Abstract: HM514100BS
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OCR Scan |
hm5141oob/blhm514100b514100b300-mil+4 | |
CED-1-A-XX-XX-B1-X-SGX-R3-XXContextual Info: 1 2 3 4 5 6 7 8 9 A A B B • All mounting types available with boardlocks BL • Straight (A mount) type available in press fit (PF) • All types available with first mate last break (FMLB) C D SPECIFICATIONS Current rating: Contact material: Contact resistance: |
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ul94v-0500vdc000vacdin41612+1 | |