BL 9 A2 Search Results

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23409B/BL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs in SOJ MSM514100B/BL packages, mounted

Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23109B/BL-xxDS3 is a fully decoded 1,048,576 word x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages and one 1-Mb

Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23109B/BL-xxDS3 is a fully decoded 1,048,576 word x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 4-Mb DRAMs in SOJ M SM 514400B/BL packages and one 1-Mb

tc511000

Contextual Info: 1,048,576 W O R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The TH M 91000BS/BSG /BL is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511000BJ on the printed circuit board. The THM91000BS / BSG / BL is optimized for

Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DE S C R IP TIO N The OKI M SC23109B/BL-xxD S3 is a fully decoded 1,048,576 word x 9-bit CM OS Dynamic Random Access Memory Module. It is composed of two 4-M b DRAM s in SOJ M SM 514400B/BL packages and one 1-Mb

Contextual Info: r n RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBUSHED. @ COPYRIGHT 19 BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. — Bl - ► 2.54 TYP - x - 1.27 TYP D — - Bl ► A A LOC DIST AG 53 REVISIONS TTTT “ BBCRiPTiöFT" REVISED PER EC 0 G3 C - 2 3 8 - 9 9

Contextual Info: GM7 1 C4 1 0 0 B/BL G oldStar 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4100B/BL is the new generation dy­ nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100B/BL has realized higher density, higher performance and various functions by

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-word x 9-bit CM OS D ynam ic Random Access Memory Module com posed of nine 4-Mb DRAMs in SOJ M SM 514100B/BL packages, mounted

CIC-44PS-40D-C6-YAM

Abstract: PA28F200 IC51-0442-1536 socket Yamaichi ic51 intel pa28f400
Contextual Info: CIC-44PS-40D-C6-YAM Rev 2 44-Lead PSOP to a 40-Pin DIP 7/97 (EXAMPLES) PSOP DEVICES: PIN CONFIGURATION: PA28F002BC PA28F200 BL / BV / BX / B5 PA28F400 BL / BV / BX / B5 PA28F800 BV / B5 SOCKET: Yamaichi IC51-0442-1536 PRICING: QTY PRICE EACH 1-4 5-9 10-24

BL-XD0361

Abstract: BL-XF0361 BL-XJB361 BL-XX1361
Contextual Info: AXIAL L E D L A M P S BL-Xxx61 Series Anode Mark For r BBL-XSx361 L- e l.8 0 ± .0 5 .0 7 l± .0 0 2 BL- XDx361 BL-XFx361 H3L- J 0.4 ± 0 .0 3 J _ . ( .0 1 6 + .0 0 1 )-j-L 4 0 .5 ± 0 .0 3 ( 0 2 0 *. 001 ) 2.10( .00) — 1 1 4 5 (.4 5 0 ) 2 5.0( 9 84 ) MIN.

Contextual Info: MICRO POWER SYSTEMS INC bl E D • büT7MMM DD051Ô1 bl T « M P —a - 9 M P 7 6 5 1 8-Channel High-Speed Non-Inverting 10 MHz Input Bandwidth 8-Bit DACs with Output Buffer and Serial Digital Data Port m Micro Power Systems FEATURES • Low Harmonic Distortion: 0.25% typical

Contextual Info: bl E bEMTflSS D OOEGMb? DT4 • M I T I MITSUBISHI LSIs MH1M09A0AJ - 6, - 7, - 8, -10/ MH1M09A0AJA- 6, - 7, - 8, -10 FAST PAGE MODE 1048576-WORD BY 9 - BIT DYNAMIC RAM MITSUBISHI MEMORY/ASIC DESCRIPTIO N The MH1M09A0AJ, J A is 1048576-word x 9- bit dynamic

Contextual Info: 1,048,576 W 0 R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The T H M 9 1 0 0 0 B S /B S G /B L is a 1,048,576 words by 9 bits dynam ic RAM m odule which assem bled 9 pcs of TC 511000B J on the printed circuit board. The THM 91000BS / BSG / BL is optim ized for

Contextual Info: REVISIONHISTORY CREATED PD 2,50 18 PLC SJ EXTERIOR WALLS ON CAVITIES A4, 9 4 , F4, G5, H 9.J9, N9 d PIO n 2.50 ! 8 PLC SJ EXTERIOR WALLS ON C AVITIES AI f Bl, F I, Gi, H6, J6, NS & P6 wmu?1 flr1 wï? 2.00 S26 PLCSJ BETWEEN C AVIT IES Al, A2, A3, A4, B l. B2, B3, B 4 ,

nec A2C

Contextual Info: bl E D H i b l<E7S2S 0 0 3 4 0 3 2 101 H N E C E fiPD4216902 2,097,152 X 9-Bit Dynamic CMOS RAM W NEC Electronics Inc. Advance Information NEC ELECTRONICS INC Description The devices listed below are static-column dynamic RAMs organized as 2M words by 9 bits and designed to

Contextual Info: bl E D • bSMTÖES 0 0 1 7 5 ^ 2*îD ■ MITI ^rg MITSUBISHI MEMORY/ASIC v MITSUBISHI LSIs M5M4V17900AJ,TP,RT-6,-7,-8 FAST PAGE MODE 18874368-BIT ( 2097152-WORD BY 9-BIT ) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (T O P V IE W ) This is a family of 2097152-word by 9-bit dynamic RAMS,

Contextual Info: 5370~5370}? .@?;9;?6A2 =28.C 3HERSPHQ Y Rn[fbgbZmnk^ Znmhfhmbo^ k^eZr Y Sa^ p^b`am bl hger 9` _hk lbg`e^ k^eZr Y Eqm^g]^] m^fi3 kZg`^ ni mh 65: Y Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ?VOJFEK .OOKJFERJNMQ ZoZbeZ[e^ .HFJC2S/ C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1

CED-2-A-XX-XX-B1-X-SGX-B3-XX

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C D SPECIFICATIONS Current rating: Contact material: Contact resistance: Housing material: Insulation resistance: Withstanding: Operating temperature: • All mounting types available with boardlocks BL • Straight (A mount) type available in press fit (PF)

HM514100

Abstract: HM514100BS
Contextual Info: HM5141OOB/BL Series 4,1 9 4 ,3 0 4 -w o rd x 1-b it D y n a m ic R a nd o m A c c e s s M em ory The Hitachi HM514100B is a CMOS dynamic RAM o rganized 4 ,1 9 4 ,3 0 4 w ords x 1 bits. HM514100B has realized higher density, higher performance and various functions by employing

CED-1-A-XX-XX-B1-X-SGX-R3-XX

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B • All mounting types available with boardlocks BL • Straight (A mount) type available in press fit (PF) • All types available with first mate last break (FMLB) C D SPECIFICATIONS Current rating: Contact material: Contact resistance:

Contextual Info: T H IS DRAWING I S UNPUBLISHED. £ L COPfR!öHT R E L E A S E D FOR 19 BY AMP INCORPOR ATE D. A IL ,19 P U BL ICAT IO N RIGHT5 LOC REVISIONS Dl ST AP RESERVED. DE SC R IP T IO N LTR REDRAWN WHI THOUT CHANGE BY EC L B Ö 0 - 0 3 7 7 / 9 9 A A A 4 PACKAGING:

Contextual Info: SA MS UN G E L E C T R O N I C S INC b?E » • 7 T b 4 1 4 2 D L 1 7 bl b 1ÔS KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.)

CED-2-A-XX-XX-XX-X-SGX-B2-XX

Abstract: DIN41612 DIN41612* TYPE D
Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C D E SPECIFICATIONS Current rating: Contact material: Contact resistance: Housing material: Insulation resistance: Withstanding: Operating temperature: F Rev. RoHS compliant 2 amps Brass 30 milliohms max. at 100 milliamps DC • All mounting types available with boardlocks BL

Contextual Info: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I S I O N S RESERVED. LTR A2 MATER IAL HOUSING CONTACT INK : BL 2\ 3. DESCRIPTION REVISED P E R E C O - 09 - 0 2 8 5 3 9