BL 0306 Search Results

bl 0306

Abstract: PG22
Contextual Info: LGA Low Inductance Capacitors 0204/0306/0805 Land Grid Arrays – Tin/Lead Termination “B” SIZE PG12 0204 PG22 (0306) PGC2 (0805) Length mm (in.) Width mm (in.) Temp. Char. Working Voltage 0.50 (0.020) 1.00 (0.039) X7S (Z) 6.3 4 (6) (4) 0.76 (0.030)

bl 0306

Contextual Info: LGA Low Inductance Capacitors 0204/0306/0805 Land Grid Arrays – Tin/Lead Termination “B” SIZE LG12 0204 Length mm (in.) Width mm (in.) Temp. Char. Working Voltage 0.50 (0.020) 1.00 (0.039) X7S (Z) 6.3 4 (6) (4) Cap (µF) X5R (D) 6.3 4 (6) (4) LG22 (0306)

Contextual Info: LGA Low Inductance Capacitors 0204/0306/0805 Land Grid Arrays Land Grid Array LGA capacitors are the latest family of low inductance MLCCs from AVX. These new LGA products are the third low inductance family developed by AVX. The innovative LGA technology sets a new standard for low inductance MLCC performance.

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

Contextual Info: IDC Low Inductance Capacitors RoHS 0306/0612/0508 IDC (InterDigitated Capacitors) GENERAL DESCRIPTION 0612 + + – L – – Style 3 + 0508 0306 TYPICAL IMPEDANCE Impedance (Ohms) 10 MLCC_1206 1 LICC_0612 0.1 IDC_0612 0.01 0.001 1 10 100 1000 Frequency (MHz)

TC59LM818DMBI

Abstract: VDDA14
Contextual Info: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network

Contextual Info: TC59LM818DMGI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMGI is Network

TC59LM818DMB-33

Abstract: TC59LM818DMB
Contextual Info: TC59LM818DMB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network

TC59LM818DMBI

Contextual Info: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network

Contextual Info: TC59LM818DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network

Contextual Info: TC59LM818DMG-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG is Network

Contextual Info: TC59LM818DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network

TC59LM836DKB

Abstract: TC59LM836DKB-33
Contextual Info: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network

TC59LM836DKB

Abstract: TC59LM836DKB-30
Contextual Info: TC59LM836DKB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network

Contextual Info: TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DMB is Network

TC59LM836DKG-33

Contextual Info: TC59LM836DKG-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKG is Network

T2D 4N DIODE

Abstract: resistor HMR 5W diode code GW 17
Contextual Info: SAK-Series SAK-Series Appendix SAK-Series TS 35 A SAK-Series TS 32 B SAK-Series combination foot TS 35 + TS 32 C SAK-Series for special applications D AKZ-Series TS 15 E Multi-pole terminal strips F KLBÜ shielded connection G Busbars / Terminal rails H Accessories

qm431

Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
Contextual Info: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N

Contextual Info: TC59LM913/05AMB-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_2 Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network

Contextual Info: TC59LM913/05AMB-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_2 Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network

BGA64

Abstract: TC59LM905AMB TC59LM913AMB
Contextual Info: TC59LM913/05AMB-50,-55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_2 Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network

Contextual Info: TC59LM913/05AMB-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_2 Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network

Contextual Info: TC59LM814/06CFTI-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 4,194,304-WORDS x 4 BANKS × 16-BITS Network FCRAM TM 8,388,608-WORDS × 4 BANKS × 8-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFTI are Network

TC59LM806CFT

Abstract: TC59LM814CFT
Contextual Info: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network